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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB060N15N5ATMA1

Name: IPB060N15N5ATMA1
Brand: Infineon Technologies
SKU: IPB060N15N5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB060N15N5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB060N15N5ATMA1.pdf

Description:: MOSFET N-CH 150V 136A TO263-7

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Product details

Overview

IPB060N15N5ATMA1 from Infineon Technologies is a 150 V, 6.0 mΩ (max) N-channel enhancement-mode MOSFET in D²-PAK (PG-TO263-7) package, optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives. It delivers 136 A continuous drain current at T_C = 25 °C, features 60 nC reverse recovery charge (Q_rr), and operates up to 175 °C junction temperature.

For engineers reviewing the IPB060N15N5ATMA1 datasheet, IPB060N15N5ATMA1 pinout, IPB060N15N5ATMA1 application, or IPB060N15N5ATMA1 equivalent, key selection criteria include R_DS(on) vs. gate charge trade-off, Q_rr-limited body diode performance in hard-switched topologies, thermal resistance (R_thJC = 0.4–0.6 K/W), and JEDEC-qualified reliability for industrial power systems.

Technical Context

This OptiMOS™5 device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit and minimized Q_rr, enabling efficient operation in 100–500 kHz switching applications. Its gate threshold voltage (V_GS(th) = 3.0–4.6 V) supports standard 10 V gate drive while maintaining robust noise immunity.

The integrated source-connected Kelvin pin (Pin 1) enables accurate gate drive referencing, reducing common-source inductance effects during fast switching. Drain-source breakdown voltage is rated at 150 V with tight distribution (no min/max spread), and transconductance (g_fs = 53–106 S) ensures stable current control across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Absolute maximum blocking voltage; defines usable input voltage range in buck, half-bridge, and LLC primary-side switches
R_DS(on), max	6.0 mΩ @ V_GS = 10 V, I_D = 68 A - Determines conduction loss at full load; enables <1.5 W loss at 100 A with proper heatsinking
Q_rr	60 nC - Low reverse recovery charge reduces turn-on losses and EMI in synchronous rectifiers and freewheeling paths
T_j max	175 °C - Enables operation in high-ambient environments (e.g., enclosed motor drives, server PSUs) without derating
R_thJC	0.4–0.6 K/W - Junction-to-case thermal resistance directly impacts heatsink sizing; supports >200 W continuous dissipation with minimal thermal interface resistance
Q_g	54.5–68 nC - Total gate charge determines driver strength requirement; compatible with standard 2 A peak gate drivers at 500 kHz
I_D, cont	136 A @ T_C = 25 °C - Continuous current rating under ideal case cooling; derates to 96 A at T_C = 100 °C

Pinout & Package

Package: PG-TO263-7 (D²-PAK), surface-mount with exposed drain tab for thermal and electrical connection. Tab is electrically connected to Drain (Pin 4).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Kelvin Source (S_K)	Provides dedicated low-inductance source reference for gate driver feedback; isolates power source path from sensing path
Pin 2, 3, 5, 6, 7	Power Source (S)	Main current-carrying source terminals; paralleled for low inductance and high-current capability
Pin 4	Drain (D)	Connected to exposed metal tab; primary high-side switching node and thermal conduction path to heatsink
Tab	Drain (D)	Electrically and thermally identical to Pin 4; must be soldered to PCB copper pour or heatsink
-	Gate (G)	No dedicated pin; Gate terminal is internal; external connection made via leadframe trace (not accessible as discrete pin)

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	Enables >97% efficiency in 48 V–12 V synchronous buck converters at 300 kHz with 100 A output
Low Q_rr (60 nC)	Reduces turn-on switching loss by ~40% vs. legacy 150 V MOSFETs in hard-switched PFC and motor phase-legs
175 °C rated junction	Eliminates need for thermal derating in sealed industrial enclosures operating at 85 °C ambient
Pb-free, halogen-free, RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) and supports lead-free reflow profiles up to 260 °C peak

Applications

Server VRM Power Stage

Industrial Motor Drive Inverter

Use Scenario: High-density 48 V input, 0.8–1.2 V/150 A output VRMs for AI accelerators and CPUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in multiphase buck topology with 500 kHz–1 MHz switching frequency.

Use Value: Low R_DS(on) minimizes conduction loss; low Q_rr prevents shoot-through during dead-time and reduces EMI filter size.

Use Scenario: 3-phase inverter stage for 5–10 kW servo drives with field-oriented control.

IC Role / Device Role / Timing Role: Phase-leg low-side switch handling 100 A RMS current with 10 kHz PWM modulation.

Use Value: 175 °C rating allows compact heatsink design; Kelvin source pin improves current regulation accuracy under dynamic load transients.

Solar Microinverter DC-DC Stage

EV Onboard Charger (OBC) PFC

Use Scenario: Isolated DC-DC converter (LLC or phase-shifted full-bridge) stepping down PV string voltage (100–150 V) to 400 V bus.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in resonant topology with zero-voltage switching.

Use Value: Tight V_GS(th) distribution ensures consistent turn-on timing across parallel devices; low C_oss (1000–1300 pF) maintains ZVS over wide load range.

Use Scenario: Boost-type active PFC front-end in 3.3–6.6 kW EV onboard chargers.

IC Role / Device Role / Timing Role: Fast-recovery boost switch operating at 65–100 kHz with critical conduction mode.

Use Value: Low Q_rr and soft reverse recovery reduce diode-induced voltage spikes and snubber losses; qualified per JEDEC J-STD-20 for automotive temperature cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency 150 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW60N150D	R_DS(on) = 7.5 mΩ (higher), Q_rr = 110 nC (nearly 2×), no Kelvin source pin	Higher conduction + switching loss; unsuitable for >300 kHz or precision current-sense designs	Lower cost where thermal margin exists and gate drive simplicity is prioritized
IXFH60N15X3	R_DS(on) = 5.8 mΩ (slightly lower), Q_rr = 85 nC, TO-247 package (larger footprint, higher inductance)	Superior R_DS(on) but larger size limits board density; higher L_GD degrades dV/dt immunity	Preferred for retrofit into legacy TO-247 layouts requiring marginal R_DS(on) improvement

Compared with STW60N150D and IXFH60N15X3, IPB060N15N5ATMA1 offers the best balance of ultra-low Q_rr, Kelvin source integration, and D²-PAK thermal performance-making it optimal for new high-frequency, space-constrained power designs where body diode behavior and layout parasitics are critical.

Availability

IPB060N15N5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor inverters, solar microinverters, and EV onboard charger PFC stages requiring stable component supply, long-term lifecycle support, and automotive-grade reliability validation.

Supply support for IPB060N15N5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and sensor solutions, with global manufacturing and qualification infrastructure aligned to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS™5 family-designed specifically for high-efficiency, high-frequency power conversion in datacenter, industrial automation, and renewable energy systems where low Q_rr and thermal robustness are decisive.

FAQ

What is the recommended gate resistor value for 500 kHz switching?

A 1.6 Ω external gate resistor is validated in the datasheet for 500 kHz operation with 10 V drive, yielding td(on) = 14.9 ns and tr = 4.3 ns. Lower values (≤1.0 Ω) increase dI/dt stress and EMI; higher values (>2.2 Ω) extend switching times and raise losses beyond 300 kHz.

Is the Kelvin source pin mandatory for layout?

Yes-the Kelvin source (Pin 1) must be routed separately from power source traces to the gate driver IC's source reference. Omitting this connection introduces 10–20 nH common-source inductance, causing gate oscillation and false turn-off during high dI/dt events above 100 A/µs.

How does Q_rr impact synchronous rectifier performance?

At 60 nC, Q_rr limits reverse recovery energy (E_rr ≈ ½ × Q_rr × V_DS) to <4.5 µJ per cycle at 75 V. This keeps body diode conduction loss below 0.3 W in 300 kHz SR applications-critical for maintaining >98% efficiency without forced air cooling.

Can IPB060N15N5ATMA1 replace older OptiMOS™4 devices in existing designs?

Yes-pin-compatible with IPB050N15N3 (150 V, 5.0 mΩ) and IPB070N15N5 (150 V, 7.0 mΩ) in PG-TO263-7. Layout requires no changes, but gate drive strength should be verified: Q_g increased by 12% vs. N3 generation, demanding ≥1.8 A peak driver capability for <20 ns rise time.

IPB060N15N5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 136A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 68A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB060N15N5ATMA1 FAQ

1.How can I place an order for IPB060N15N5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB060N15N5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB060N15N5ATMA1 reliable?

The price and inventory of IPB060N15N5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB060N15N5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB060N15N5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB060N15N5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB060N15N5ATMA1?

IPB060N15N5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB060N15N5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB060N15N5ATMA1?

For technical support, including IPB060N15N5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB060N15N5ATMA1 requirements.

6.How does Aetrix verify that IPB060N15N5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB060N15N5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB060N15N5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB060N15N5ATMA1?

All IPB060N15N5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB060N15N5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB060N15N5ATMA1 part is unused and in its original packaging.

Return procedure for IPB060N15N5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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