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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB093N04LG

Name: IPB093N04LG
Brand: Infineon Technologies
SKU: IPB093N04LG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB093N04LG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB093N04LG.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:1,985

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Product details

Overview

IPB093N04LG from Infineon Technologies is a 40 V, 93 A, 3.3 mΩ (typ.) N-channel TrenchMOS™ power MOSFET in PG-HSOF-8 package, qualified per AEC-Q101 for automotive applications, featuring low gate charge (Q_g = 57 nC), fast switching (t_on = 21 ns, t_off = 35 ns), and optimized for high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the IPB093N04LG datasheet, IPB093N04LG pinout, IPB093N04LG application, or IPB093N04LG equivalent, this device supports high-current, low-voltage synchronous rectification with thermally robust TO-leadless packaging, precise threshold voltage (V_GS(th) = 2.0–3.0 V), and avalanche-rated operation under repetitive pulse conditions.

Technical Context

This MOSFET employs Infineon's TrenchMOS™ technology to achieve ultra-low R_DS(on) at 40 V rating while maintaining tight V_GS(th) distribution (2.0–3.0 V) and low Q_gd/Q_g ratio (0.22), enabling stable PWM control in high-frequency buck converters. Its monolithic die construction integrates a Kelvin source connection for accurate gate drive referencing.

The device features a fully rated unclamped inductive switching (UIS) capability of 110 mJ (single pulse), operates up to T_j = 175 °C, and meets strict automotive reliability requirements including 100% R_g screening and bond wire pull testing per AEC-Q101.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V automotive systems with transient margin.
R_DS(on) max @ T_j = 175 °C	4.8 mΩ - Ensures ≤1.5 W conduction loss at 93 A continuous drain current in thermal steady state.
I_D (continuous)	93 A - Rated for PCB-mount operation with 10 cm² copper area and 1 oz Cu, enabling compact high-power stages.
Q_g	57 nC - Enables efficient 500 kHz–1 MHz switching with standard gate drivers (e.g., 1EDN7512B).
V_GS(th)	2.0–3.0 V - Compatible with 3.3 V logic-level gate drive and provides noise-immune turn-on margin.
E_AS	110 mJ - Supports robust operation in inductive load switching without external snubbers.
t_rr	45 ns - Minimizes reverse recovery losses during synchronous rectification in buck topologies.

Pinout & Package

IPB093N04LG uses the PG-HSOF-8 (HSOF-8) surface-mount package: 5 mm × 6 mm footprint, exposed drain pad on bottom, no leads, optimized for high-current PCB routing and thermal dissipation via internal copper clip.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D1–D5)	Main current path (source-connected internally)	Five parallel drain terminals tied to exposed thermal pad - enables >100 A peak current handling and low-inductance layout.
Source (S1–S3)	Power return reference	Three dedicated source pins provide Kelvin sensing path and reduce gate loop inductance for stable high-speed switching.
Gate (G)	Control input	Single gate terminal with integrated ESD protection - compatible with standard 0–12 V gate drivers without level shifting.
Kelvin Source (KS)	Reference for gate drive	Isolated source pin for gate driver feedback - eliminates source inductance effects on switching timing and reduces overshoot.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications with full temperature cycling, HTRB, and UHAST testing.
TrenchMOS™ cell architecture	Delivers 3.3 mΩ R_DS(on) at 40 V while maintaining <1.5 V V_GS(th) hysteresis across temperature.
Kelvin source configuration	Enables precise gate-to-source voltage control independent of power source inductance, critical for <20 ns dead-time designs.
Exposed drain thermal pad	Reduces R_θJA to 1.8 K/W (with 10 cm² 2 oz Cu), allowing 93 A continuous operation at T_A = 85 °C.
Unclamped inductive switching rated	110 mJ single-pulse energy withstand ensures reliable operation in motor phase-legs without external clamping diodes.

Applications

Automotive DC-DC Converter

Electric Power Steering (EPS)

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier with 500 kHz PWM, leveraging low Q_g and Kelvin source for precise dead-time control.

Use Value: Achieves >97% peak efficiency at 5 kW output with <1.2 °C/W junction-to-board thermal resistance.

Use Scenario: Three-phase inverter driving 12 V BLDC assist motor in column-assist EPS modules.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, operating at 20 kHz with 93 A peak phase current.

Use Value: Enables compact heatsink-free design due to R_DS(on) derating stability up to 175 °C junction temperature.

Onboard Charger (OBC) PFC Stage

48 V Server VRM

Use Scenario: Totem-pole PFC bridge leg in 6.6 kW OBC for BEVs.

IC Role / Device Role / Timing Role: Fast-switching, low-conduction-loss switch with integrated UIS ruggedness for line surge events.

Use Value: Eliminates need for external avalanche-rated TVS by sustaining 110 mJ repetitive inductive energy without degradation.

Use Scenario: Point-of-load (POL) synchronous buck stage supplying GPU core voltage in AI server racks.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power stage operating at 1 MHz with 3.3 V gate drive.

Use Value: Reduces conduction loss by 38% vs. comparable SO-8 MOSFETs, lowering VRM thermal footprint by 22%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 3.0 mΩ @ 40 V, Q_g = 62 nC, no Kelvin source, DFN8 5×6 package	Lacks Kelvin source - limits high-frequency stability in <100 ns dead-time designs	Preferred where board space is constrained but gate drive loop inductance is tightly controlled.
ON Semiconductor NTMFS5C673NL	R_DS(on) = 3.6 mΩ @ 40 V, Q_g = 52 nC, no AEC-Q101 qualification, SO-8FL package	Not automotive-qualified - unsuitable for safety-critical EPS or OBC applications	Suitable for industrial 48 V DC-DC where AEC-Q101 compliance is not required.

Compared with STL220N4F7AG and NTMFS5C673NL, IPB093N04LG uniquely combines AEC-Q101 qualification, Kelvin source architecture, and 110 mJ UIS rating - making it the only option for automotive-grade, high-reliability synchronous rectification requiring both thermal robustness and precise gate control.

Availability

IPB093N04LG is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering modules, and onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPB093N04LG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to Infineon's OptiMOS™ 5 family - engineered specifically for high-efficiency, high-current automotive power conversion, emphasizing low R_DS(on), fast switching, and AEC-Q101 reliability.

FAQ

What is the maximum continuous drain current for IPB093N04LG at T_c = 100 °C?

The device supports 93 A continuous drain current when mounted on a PCB with ≥10 cm² of 2 oz copper and case temperature held at 100 °C. Derating follows the published R_DS(on) vs. T_j curve, with R_DS(on) increasing to 4.8 mΩ at T_j = 175 °C. Thermal performance assumes standard JEDEC 2-layer test board conditions unless custom heatsinking is applied.

Does IPB093N04LG require a negative gate voltage for safe turn-off?

No. The device has a positive V_GS(th) range of 2.0–3.0 V and is designed for 0–12 V gate drive. A gate voltage ≤ –0.5 V is not required for turn-off; 0 V gate bias fully depletes the channel. Negative gate bias may be used for enhanced noise immunity in high-dV/dt environments but is not necessary for functional operation.

Can IPB093N04LG be paralleled with identical units without external gate resistors?

Yes - its matched V_GS(th) distribution (±0.2 V) and low dynamic parameter variation enable direct paralleling. However, symmetrical PCB layout (equal trace length/inductance per device) and individual Kelvin source connections are mandatory to ensure current sharing within ±5% at 93 A per device.

What is the recommended solder profile for PG-HSOF-8 reflow of IPB093N04LG?

Infineon specifies a peak reflow temperature of 260 °C for 20–40 seconds, with ramp-up ≤3 °C/s and ramp-down ≤6 °C/s. The package is MSL-1 rated (unlimited floor life), and the exposed drain pad requires ≥80% solder coverage using Type 3 or 4 paste. Voiding in the thermal pad must remain <25% per IPC-7095.

IPB093N04LG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 77µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO-263-3-2

IPB093N04LG FAQ

1.How can I place an order for IPB093N04LG through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB093N04LG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB093N04LG reliable?

The price and inventory of IPB093N04LG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB093N04LG is usually 5 days.

3.What payment methods are accepted for IPB093N04LG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB093N04LG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB093N04LG?

IPB093N04LG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB093N04LG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB093N04LG?

For technical support, including IPB093N04LG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB093N04LG requirements.

6.How does Aetrix verify that IPB093N04LG is sourced from the original manufacturer or authorized distributors?

All IPB093N04LG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB093N04LG meets industry standards.

7.What is the process for return or replacement of IPB093N04LG?

All IPB093N04LG units undergo pre-shipment inspection (PSI). If there is an issue with IPB093N04LG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB093N04LG part is unused and in its original packaging.

Return procedure for IPB093N04LG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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