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Infineon Technologies IPB100N04S4H2ATMA1

Name: IPB100N04S4H2ATMA1
Brand: Infineon Technologies
SKU: IPB100N04S4H2ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB100N04S4H2ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB100N04S4H2ATMA1.pdf

Description:: MOSFET N-CH 40V 100A TO263-3

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Product details

Overview

IPB100N04S4H2ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 2.4 mΩ R_DS(on) at 100 A/10 V, 175 °C operation, and 100% single-pulse avalanche tested. It delivers high-current switching in automotive powertrain and body control modules.

For engineers reviewing the IPB100N04S4H2ATMA1 datasheet, IPB100N04S4H2ATMA1 pinout, IPB100N04S4H2ATMA1 application, or IPB100N04S4H2ATMA1 equivalent, key selection criteria include R_DS(on) at 100 A, thermal resistance (R_thJC = 1.3 K/W), avalanche energy (E_AS = 280 mJ), and AEC-Q101 qualification status.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low conduction loss and fast switching with controlled gate charge (Q_g = 70–90 nC, Q_gd = 10–23 nC). Its 1.3 K/W junction-to-case thermal resistance enables high-power density mounting on PCBs with 6 cm² copper area.

Designed for hard-switched DC-DC converters and motor drivers, it supports 400 A pulsed drain current and features a 0.9–1.3 V body diode forward voltage at 100 A, with t_rr = 48 ns and Q_rr = 54 nC under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive systems
R_DS(on) max	2.4 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1 W conduction loss at full load
I_D continuous	100 A at T_C = 25 °C - Limited by bondwire; supports high-current battery disconnect
E_AS	280 mJ at I_D = 50 A - Confirmed single-pulse avalanche ruggedness for inductive load switching
R_thJC	1.3 K/W - Allows direct heatsink mounting with predictable thermal path
Q_g	70–90 nC - Determines gate driver power requirement for 100 kHz switching
t_rr	48 ns - Limits reverse recovery loss in synchronous rectification

Pinout & Package

IPB100N04S4H2ATMA1 uses the PG-TO263-3-2 surface-mount package (D²PAK) with isolated drain tab. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (exposed pad).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V logic-level drive; threshold V_GS(th) = 2.0–4.0 V ensures robust turn-on margin
Pin 2 (Source)	Reference node	Common return for gate drive and load current; ties to PCB ground plane
Pin 3 (Drain)	High-side or low-side power path	Exposed copper pad - must be soldered to ≥6 cm² PCB copper for thermal performance

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain applications per stress test requirements
100% avalanche tested	Each unit passes single-pulse E_AS = 280 mJ test - no screening failure allowed
MSL1 rating	Compatible with lead-free reflow up to 260 °C peak - no moisture sensitivity concerns
175 °C operating temperature	Enables placement near hot engine compartments without derating
Green Product (RoHS)	Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU

Applications

Automotive Body Control Module

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-side load switch for headlight or HVAC blower control in BCM.

IC Role / Device Role / Timing Role: Power MOSFET switching 12 V/24 V loads with PWM dimming and short-circuit protection.

Use Value: Low R_DS(on) reduces heat generation during continuous 100 A operation; AEC-Q101 ensures reliability over 15-year vehicle life.

Use Scenario: Synchronous rectifier in 48 V–12 V bidirectional buck-boost converter.

IC Role / Device Role / Timing Role: Low-side switch handling 100 A continuous current with fast t_f = 21 ns and low Q_rr.

Use Value: 48 ns t_rr and 54 nC Q_rr minimize cross-conduction loss; 1.3 K/W R_thJC sustains efficiency at 175 °C ambient.

Electric Power Steering (EPS) Motor Driver

On-Board Charger (OBC) Input Stage

Use Scenario: Half-bridge high-side switch in 3-phase EPS inverter driving 400 W assist motor.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET with 18 ns t_d(on) and 13 ns t_r for precise torque control.

Use Value: 70–90 nC total gate charge enables efficient gate driving at >20 kHz; 280 mJ E_AS withstands motor phase reversal transients.

Use Scenario: Primary-side switching FET in OBC AC-DC PFC stage operating at 100 kHz.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch handling 100 A peak line currents.

Use Value: 2.4 mΩ R_DS(on) cuts conduction loss by >30% vs. legacy 3.5 mΩ parts; RoHS compliance meets global EV supply chain mandates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP100N04S4H2AKSA1	PG-TO220-3-1 package; R_thJA = 62 K/W (leaded); same R_DS(on) and E_AS	Requires bolted heatsink; not suitable for high-density SMD layouts	Select when mechanical mounting flexibility outweighs PCB space constraints
IPB100N04S4-02	Same PG-TO263-3-2 package but R_DS(on) = 2.7 mΩ (max); lower gate charge (Q_g = 60 nC)	Slightly higher conduction loss but improved switching efficiency at >200 kHz	Select for ultra-high-frequency SMPS where switching loss dominates

Compared with IPP100N04S4H2AKSA1, IPB100N04S4H2ATMA1 offers superior thermal performance in SMD layouts; versus IPB100N04S4-02, it trades 0.3 mΩ lower R_DS(on) for ~15% higher Q_g, favoring high-current DC applications over high-frequency AC.

Availability

IPB100N04S4H2ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild hybrid DC-DC converters, and electric power steering motor drivers requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB100N04S4H2ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability automotive power switching applications demanding AEC-Q101 qualification and rugged avalanche performance.

FAQ

What is the maximum junction temperature and how does it affect derating?

The absolute maximum junction temperature is +175 °C. At T_C = 100 °C, continuous drain current remains 100 A due to optimized thermal design. Derating begins only above 100 °C case temperature, with I_D linearly decreasing to zero at 175 °C - confirmed by Figure 2 in the datasheet.

Is this MOSFET suitable for synchronous rectification in a 48 V system?

Yes. With V_SD = 0.9–1.3 V at 100 A and t_rr = 48 ns, it provides low forward loss and minimal reverse recovery charge (Q_rr = 54 nC), making it suitable for high-efficiency synchronous rectification in 48 V–12 V DC-DC stages.

Does the "H2" suffix indicate a specific revision or qualification level?

Yes. The "H2" suffix denotes the second-generation OptiMOS™-T2 process, incorporating enhanced avalanche ruggedness, tighter R_DS(on) distribution, and full AEC-Q101 qualification - distinct from earlier H1 versions which lacked 100% E_AS testing.

Can IPB100N04S4H2ATMA1 replace IPP100N04S4H2AKSA1 in existing TO-220 designs?

No direct drop-in replacement: IPB100N04S4H2ATMA1 uses PG-TO263-3-2 (D²PAK), while IPP100N04S4H2AKSA1 uses PG-TO220-3-1. PCB footprint, thermal interface, and mechanical mounting differ significantly - redesign required for layout and heatsink integration.

IPB100N04S4H2ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 70µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB100N04S4H2ATMA1 FAQ

1.How can I place an order for IPB100N04S4H2ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB100N04S4H2ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB100N04S4H2ATMA1 reliable?

The price and inventory of IPB100N04S4H2ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB100N04S4H2ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB100N04S4H2ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB100N04S4H2ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB100N04S4H2ATMA1?

IPB100N04S4H2ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB100N04S4H2ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB100N04S4H2ATMA1?

For technical support, including IPB100N04S4H2ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB100N04S4H2ATMA1 requirements.

6.How does Aetrix verify that IPB100N04S4H2ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB100N04S4H2ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB100N04S4H2ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB100N04S4H2ATMA1?

All IPB100N04S4H2ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB100N04S4H2ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB100N04S4H2ATMA1 part is unused and in its original packaging.

Return procedure for IPB100N04S4H2ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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