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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB100N10S305ATMA1

Name: IPB100N10S305ATMA1
Brand: Infineon Technologies
SKU: IPB100N10S305ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB100N10S305ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB100N10S305ATMA1.pdf

Description:: MOSFET N-CH 100V 100A TO263-3

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Product details

Overview

IPB100N10S305ATMA1 from Infineon Technologies is a 100 V, 100 A N-channel enhancement-mode automotive-grade MOSFET in PG-TO263-3-2 (D²PAK) package, with R_DS(on) max of 4.8 mΩ at V_GS = 10 V and 100 A, 175 °C maximum junction temperature, and 100% avalanche tested - used in high-current DC-DC converters and motor control stages in EV powertrain subsystems.

For engineers reviewing the IPB100N10S305ATMA1 datasheet, IPB100N10S305ATMA1 pinout, IPB100N10S305ATMA1 application, or IPB100N10S305ATMA1 equivalent, key selection criteria include R_DS(on) at 100 A, thermal resistance R_thJC = 0.5 K/W, avalanche energy E_AS = 1445 mJ, gate charge Q_g = 176 nC, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-frequency, high-current applications. Its gate threshold voltage (2.0–4.0 V) enables robust drive compatibility with 5 V and 10 V logic-level controllers, while its 100% unclamped inductive switching (UIS) rating ensures reliability in transient overload conditions.

The MOSFET features integrated body diode with low forward voltage (V_SD = 1.2 V max at I_F = 80 A, T_j = 25 °C) and fast reverse recovery (t_rr = 108 ns), supporting synchronous rectification and bidirectional current handling in half-bridge and full-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 800 V battery systems with margin for transients
R_DS(on) max	4.8 mΩ @ V_GS = 10 V, I_D = 100 A - enables <1 W conduction loss at rated current
I_D continuous	100 A @ T_C = 25 °C - limited by bondwire; usable up to 100 A with proper heatsinking
E_AS	1445 mJ @ I_D = 50 A - withstands single-pulse inductive energy without failure
Q_g	176 nC @ V_DD = 80 V - determines gate driver power requirement and switching speed trade-off
R_thJC	0.5 K/W - allows direct thermal path to heatsink; enables >150 W dissipation at ΔT = 75 K
T_j max	+175 °C - qualified for engine bay and traction inverter environments

Pinout & Package

IPB100N10S305ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal performance. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; requires 10 V drive for full enhancement; Q_gs = 61 nC defines Miller plateau duration
Pin 2 (Drain)	High-side power node	Exposed copper tab - must be soldered to PCB copper pour for thermal conduction; carries full load current
Pin 3 (Source)	Reference return	Common node for gate drive reference and current sensing; connects to low-side switch or shunt resistor

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive power electronics including engine control, ADAS actuators, and onboard chargers
100% UIS tested	Each unit verified for unclamped inductive switching stress - eliminates field failure due to inductive kickback
Low R_DS(on) × Q_g figure-of-merit	845 mΩ·nC - balances conduction and switching loss for 100–200 kHz operation in DC-DC converters
MSL1 reflow rating	Suitable for lead-free reflow up to 260 °C peak - compatible with standard SMT assembly lines
Integrated body diode	V_SD = 1.2 V max at 80 A - enables freewheeling without external diode in H-bridge motor drives

Applications

Automotive Onboard Charger (OBC)

EV Traction Inverter Half-Bridge

Use Scenario: Bidirectional AC/DC conversion stage operating at 100–200 kHz with SiC gate drivers.

IC Role / Device Role / Timing Role: High-side switching element in interleaved totem-pole PFC and DC-DC isolation stage.

Use Value: 4.8 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 5.5 mΩ devices at 100 A, improving OBC efficiency to >96%.

Use Scenario: 400 V battery-fed inverter driving permanent magnet motor at 10–15 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-loss switching device in phase-leg configuration with active short-circuit protection.

Use Value: 1445 mJ avalanche energy rating enables safe operation during fault-induced shoot-through events without desaturation circuitry.

48 V Mild Hybrid Starter-Generator

Industrial Motor Drive (IE4+)

Use Scenario: Belt-integrated starter-generator (BISG) controlling torque delivery and regenerative braking.

IC Role / Device Role / Timing Role: Power switch in dual-phase buck-boost converter managing bidirectional 48 V/12 V power flow.

Use Value: 175 °C T_j max and MSL1 rating allow placement near engine block with minimal derating in under-hood thermal environment.

Use Scenario: Variable-frequency drive for HVAC compressors and pumps requiring high efficiency at partial load.

IC Role / Device Role / Timing Role: Output stage switch in 3-phase inverter with sensorless FOC control.

Use Value: Low Q_gd/Q_gs ratio (0.75 typ.) improves dv/dt immunity and reduces gate oscillation risk in long-cable motor installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP100N10S3-05	Same die, TO-220-3-1 through-hole package; R_thJA = 62 K/W (leaded); no exposed drain pad	Better suited for prototyping, lower-volume industrial SMPS where manual assembly or heatsink clamping is preferred	Select when board space allows through-hole mounting and thermal interface relies on mechanical clamp rather than soldered copper area
IPI100N10S3-05	Same die, TO-262-3-1 (I²PAK) package; R_thJC = 0.5 K/W identical, but R_thJA = 62 K/W on minimal footprint	Offers mid-density packaging for automated SMT with improved mechanical stability over D²PAK in high-vibration environments	Select when vibration resistance and reworkability outweigh marginal thermal advantage of D²PAK's larger copper area

Compared with IPP100N10S3-05 and IPI100N10S3-05, IPB100N10S305ATMA1 delivers optimal thermal performance in high-power density automotive modules due to its D²PAK package's superior soldered thermal interface, while maintaining identical electrical specs and AEC-Q101 compliance.

Availability

IPB100N10S305ATMA1 is available at Aetrix Electronics and suitable for automotive onboard chargers, EV traction inverters, and 48 V mild hybrid systems requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant traceability.

Supply support for IPB100N10S305ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T product line - engineered specifically for high-efficiency, high-reliability automotive power conversion, emphasizing ruggedness, thermal performance, and system-level robustness in harsh environments.

FAQ

What is the maximum allowable gate-source voltage for IPB100N10S305ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation above +12 V or below –5 V risks oxide degradation; recommended drive is 10 V for full enhancement with margin. Gate drive circuits must limit dV/dt to avoid false turn-on via C_rss, especially during high dv/dt switching events in bridge configurations.

Does IPB100N10S305ATMA1 require a negative gate voltage for reliable turn-off?

No - it operates reliably with 0 V gate drive for turn-off. The gate threshold voltage range (2.0–4.0 V) ensures sufficient noise margin at 0 V, and the device has no inherent shoot-through risk in standard half-bridge layouts. Negative bias is unnecessary unless operating in ultra-high-noise environments with >50 V/ns dv/dt.

Can IPB100N10S305ATMA1 be paralleled for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (α = 0.56 %/°C) enables stable current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared thermal interface. Derating to 85 A per device is recommended for 175 °C T_j operation with 10 °C inter-device ΔT.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode is rated for 100 A continuous forward current and exhibits low V_SD (1.2 V max) and fast t_rr (108 ns). It supports hard commutation in synchronous buck converters up to 200 kHz, though external Schottky diodes may be preferred for <100 ns recovery in ultra-high-frequency designs.

IPB100N10S305ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 176 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB100N10S305ATMA1 FAQ

1.How can I place an order for IPB100N10S305ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB100N10S305ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB100N10S305ATMA1 reliable?

The price and inventory of IPB100N10S305ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB100N10S305ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB100N10S305ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB100N10S305ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB100N10S305ATMA1?

IPB100N10S305ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB100N10S305ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB100N10S305ATMA1?

For technical support, including IPB100N10S305ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB100N10S305ATMA1 requirements.

6.How does Aetrix verify that IPB100N10S305ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB100N10S305ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB100N10S305ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB100N10S305ATMA1?

All IPB100N10S305ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB100N10S305ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB100N10S305ATMA1 part is unused and in its original packaging.

Return procedure for IPB100N10S305ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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