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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB100N12S305ATMA1

Name: IPB100N12S305ATMA1
Brand: Infineon Technologies
SKU: IPB100N12S305ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB100N12S305ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA

Datasheet:: IPB100N12S305ATMA1.pdf

Description:: MOSFET N-CH 120V 100A TO263-3

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Product details

Overview

IPB100N12S305ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 120 V V_DS, 4.8 mΩ max R_DS(on) at 100 A and 10 V V_GS, and 175 °C operation-designed for high-current automotive power stages including motor control and DC-DC converters.

For engineers reviewing the IPB100N12S305ATMA1 datasheet, IPB100N12S305ATMA1 pinout, IPB100N12S305ATMA1 application, or IPB100N12S305ATMA1 equivalent, key selection criteria include avalanche ruggedness (1445 mJ single-pulse), thermal resistance (0.5 K/W j-c), gate charge profile (139–185 nC total), and SMD-compatible thermal performance on 6 cm² PCB copper.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit while maintaining robust avalanche capability. Its gate threshold voltage (2.0–4.0 V) and plateau voltage (~5.5 V) support reliable drive with standard 10 V gate drivers in automotive 12 V systems.

The MOSFET integrates a co-packaged body diode with 100 A continuous forward current rating, 0.6–1.2 V forward voltage at 100 A, and 108 ns reverse recovery time-enabling synchronous rectification and freewheeling in hard-switched topologies without external diode addition.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - supports 48 V and 12 V automotive bus architectures with margin against load dump transients
R_DS(on) max	4.8 mΩ @ 100 A, 10 V V_GS, 25 °C - enables <1 W conduction loss at 100 A, critical for thermally constrained modules
I_D continuous	100 A @ T_C = 25 °C - limited by bondwire; usable up to 100 A with proper heatsinking per derating curve
E_AS	1445 mJ @ I_D = 50 A - ensures single-pulse avalanche survivability during inductive turn-off events
Q_g total	139–185 nC - determines gate driver power requirement and switching loss trade-off in PWM applications
R_thJC	0.5 K/W - allows direct thermal path to heatsink; enables >150 W dissipation with 75 K ΔT
t_r/t_f	17 ns / 20 ns - supports >500 kHz switching in high-efficiency DC-DC converters

Pinout & Package

IPB100N12S305ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab, optimized for PCB thermal management via large copper area (6 cm² recommended). The package supports reflow up to 260 °C (MSL1).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground plane or source return path; electrically tied to exposed metal pad on bottom
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires <100 nC gate charge for full enhancement; sensitive to ESD
Pin 3 (Drain)	Power output (D)	High-current drain connection; ties directly to exposed copper tab on underside for thermal and electrical conduction

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock per JESD47
100% avalanche tested	Each unit subjected to single-pulse avalanche stress at production test-ensures field reliability in inductive switching
Optimized R_DS(on) × Q_g	4.8 mΩ × 160 nC typical - balances conduction and switching losses for 10–100 kHz motor drive and DC-DC operation
Integrated body diode	100 A continuous, 400 A pulsed, 108 ns t_rr - eliminates need for external freewheeling diode in half-bridge configurations
175 °C maximum junction temp	Enables operation in engine bay environments without derating below 150 °C ambient

Applications

Automotive Motor Control

On-Board Charger (OBC) DC-DC Stage

Use Scenario: High-current H-bridge driving 48 V BLDC traction assist motors in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side power switch handling 100 A peak phase current with fast turn-on/off for precise torque control.

Use Value: 4.8 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 6.5 mΩ devices, lowering thermal design burden in sealed motor controllers.

Use Scenario: Primary-side synchronous rectifier in 3.3 kW bidirectional OBC LLC resonant converter.

IC Role / Device Role / Timing Role: High-efficiency secondary-side switch replacing Schottky diodes in 400 V–650 V output stage.

Use Value: 1445 mJ avalanche energy prevents failure during LLC transient overvoltage events; 0.5 K/W R_thJC sustains 98% efficiency at full load.

12 V Automotive DC-DC Converter

Electric Power Steering (EPS) Inverter

Use Scenario: Step-down converter supplying 12 V auxiliary loads from 48 V battery in dual-voltage architectures.

IC Role / Device Role / Timing Role: High-side switch operating at 200–500 kHz with tight duty cycle control.

Use Value: 17 ns rise time and 139 nC Q_g enable clean PWM edges and minimal dead-time loss, improving light-load efficiency.

Use Scenario: Three-phase inverter powering brushless steering motor with safety-critical torque response.

IC Role / Device Role / Timing Role: Phase-leg switch delivering 80 A RMS with functional safety monitoring of V_GS and temperature.

Use Value: AEC-Q101 qualification and 175 °C rating ensure compliance with ASIL-C system requirements under sustained thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP100N12S3-05	Same die, TO-220-3-1 through-hole package; higher R_thJA (62 K/W) and no SMD thermal optimization	Suitable for prototyping or low-volume industrial power supplies where manual assembly and heatsink mounting are preferred	Select when board-level reflow is not required and mechanical stability outweighs thermal density needs
IPI100N12S3-05	Same die, TO-262-3-1 package; identical R_DS(on) but lower creepage/clearance than D²PAK; no isolated drain tab	Fits in space-constrained industrial inverters requiring vertical mounting and moderate thermal performance	Choose when footprint size must match TO-220 but improved thermal interface over IPP version is needed

Compared with IPP100N12S3-05 and IPI100N12S3-05, IPB100N12S305ATMA1 delivers superior PCB-level thermal management via its D²PAK drain-tab layout and MSL1 reflow compatibility-making it the only choice for high-volume automotive SMT production where thermal density and process repeatability are critical.

Availability

IPB100N12S305ATMA1 is available at Aetrix Electronics and suitable for automotive motor control, on-board charger DC-DC conversion, and electric power steering inverter designs requiring stable component supply across extended product lifecycles.

Supply support for IPB100N12S305ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T product line-engineered specifically for high-current, high-reliability automotive power conversion where thermal robustness, avalanche tolerance, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB100N12S305ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement with margin; gate drive circuits must limit overshoot using RC snubbers or active clamping, especially in high-dV/dt environments like motor drives.

Does IPB100N12S305ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For 100 A switching at 200 kHz, a 3.3 Ω to 5.6 Ω resistor is typical. Lower values reduce switching loss but increase EMI and gate driver stress; higher values improve EMI but raise t_r/t_f and conduction loss. Layout parasitics must be minimized regardless of R_G value.

Can IPB100N12S305ATMA1 be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Thermal coupling and gate loop inductance must be identical per device. Use Kelvin source connections and individual gate resistors. Derate total current by 15% minimum due to R_DS(on) mismatch (±15% over temperature) and dynamic current imbalance during switching transitions.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the integrated body diode is rated for 100 A continuous forward current at T_C = 25 °C and 100 °C junction temperature. However, its V_SD (0.6–1.2 V) is higher than Schottky alternatives, so conduction loss must be evaluated versus external diode cost and board area trade-offs in each specific topology.

IPB100N12S305ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 185 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-1

IPB100N12S305ATMA1 FAQ

1.How can I place an order for IPB100N12S305ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB100N12S305ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB100N12S305ATMA1 reliable?

The price and inventory of IPB100N12S305ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB100N12S305ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB100N12S305ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB100N12S305ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB100N12S305ATMA1?

IPB100N12S305ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB100N12S305ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB100N12S305ATMA1?

For technical support, including IPB100N12S305ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB100N12S305ATMA1 requirements.

6.How does Aetrix verify that IPB100N12S305ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB100N12S305ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB100N12S305ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB100N12S305ATMA1?

All IPB100N12S305ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB100N12S305ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB100N12S305ATMA1 part is unused and in its original packaging.

Return procedure for IPB100N12S305ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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