Infineon Technologies IPB120N04S401ATMA1

Overview

IPB120N04S401ATMA1 from Infineon Technologies is a 40 V, 120 A N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 175 °C operation, AEC-Q101 qualified, and 100% avalanche tested. It delivers 1.35 mΩ typical R_DS(on) at V_GS = 10 V and supports high-current motor drive and DC-DC converter primary-side switching.

For engineers reviewing the IPB120N04S401ATMA1 datasheet, IPB120N04S401ATMA1 pinout, IPB120N04S401ATMA1 application, or IPB120N04S401ATMA1 equivalent, key selection criteria include R_DS(on) at 100 A, thermal resistance (R_thJC = 0.8 K/W), avalanche energy (E_AS = 750 mJ), gate charge (Q_g = 135–176 nC), and automotive qualification status.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-current 12 V/24 V automotive and industrial power stages. Its 1.35 mΩ R_DS(on) (SMD version) and 135 nC total gate charge enable efficient operation at high frequencies up to 100 kHz in synchronous buck converters.

The device integrates a robust body diode with 64 ns reverse recovery time and 88 nC Q_rr, supporting hard-switched topologies. Thermal design is enabled by its 0.8 K/W junction-to-case resistance and MSL1 rating for lead-free reflow up to 260 °C.

Key Specifications

Pinout & Package

IPB120N04S401ATMA1 uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in standard configuration: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP120N04S4-01 and IPI120N04S4-01, IPB120N04S401ATMA1 offers superior thermal density via D²PAK's optimized copper area coupling, enabling 20% higher power density in space-constrained automotive ECUs without sacrificing avalanche robustness or AEC-Q101 compliance.

Availability

IPB120N04S401ATMA1 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, and on-board charger input stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPB120N04S401ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive and industrial 12 V–48 V systems where low R_DS(on), fast switching, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is +175 °C, and the device is fully specified for continuous operation across this range. Derating curves in the datasheet show that at T_C = 100 °C, the device maintains 120 A continuous current capability with V_GS ≥ 6 V, supported by its 0.8 K/W R_thJC and robust packaging.

Is IPB120N04S401ATMA1 suitable for synchronous rectification?

Yes - its low 1.35 mΩ R_DS(on), fast 64 ns t_rr, and low 88 nC Q_rr make it well-suited for synchronous rectification in secondary-side switching of isolated DC-DC converters, especially in 12 V and 48 V output stages where conduction loss dominates efficiency.

Does this MOSFET require a negative gate voltage for safe turn-off in high-dv/dt environments?

No - the device has ±20 V gate-source voltage rating and exhibits stable threshold behavior up to 175 °C. While a small negative turn-off bias (e.g., –5 V) improves noise immunity, the 3.0 V typical V_GS(th) and 100 nA I_GSS ensure reliable turn-off with 0 V gate drive in most automotive and industrial layouts.

How does the avalanche rating impact system-level reliability?

Each unit undergoes 100% single-pulse avalanche testing to 750 mJ at I_D = 60 A, verifying capability to absorb inductive energy without failure. This eliminates need for external snubbers in brushed motor drives and solenoid controls, reducing BOM count and improving field failure resilience.