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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB120N04S402ATMA1

Name: IPB120N04S402ATMA1
Brand: Infineon Technologies
SKU: IPB120N04S402ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB120N04S402ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB120N04S402ATMA1.pdf

Description:: MOSFET N-CH 40V 120A D2PAK

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Inventory:3,008

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Product details

Overview

IPB120N04S402ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 120 A continuous drain current at T_C = 25 °C, and 1.8 mΩ max R_DS(on) (SMD version). It operates up to 175 °C junction temperature and is 100% avalanche tested-used in automotive DC-DC converters and high-current motor control stages.

For engineers reviewing the IPB120N04S402ATMA1 datasheet, IPB120N04S402ATMA1 pinout, IPB120N04S402ATMA1 application, or IPB120N04S402ATMA1 equivalent, key selection criteria include R_DS(on) at 100 A/10 V, thermal resistance (R_thJC = 0.95 K/W), avalanche energy (E_AS = 480 mJ), and AEC qualification for under-hood power switching.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive, and its 1.58–1.8 mΩ typical R_DS(on) (SMD) supports high-efficiency synchronous rectification in buck converters.

The MOSFET features integrated body diode with 0.9–1.3 V forward voltage at 100 A and 60 ns reverse recovery time-critical for minimizing shoot-through and commutation loss in half-bridge topologies. Its 8260–10740 pF input capacitance and 14–32 nC Q_gd support fast, controlled switching with moderate gate driver strength.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V battery rail applications with margin against load dump transients.
R_DS(on) max (SMD)	1.8 mΩ - Enables ≤2.2 W conduction loss at 100 A, reducing heatsink requirements in compact power modules.
I_D continuous	120 A @ T_C = 25 °C - Supports high-current motor phases and starter solenoid drivers without derating.
E_AS	480 mJ - Withstands single-pulse inductive energy from 60 A loads, eliminating need for external snubbers in relay replacement.
R_thJC	0.95 K/W - Allows direct thermal coupling to PCB copper pour or heatsink, enabling >150 W power dissipation with <100 K rise.
Q_g total	103–134 nC - Determines gate driver current requirement (~1.3 A avg for 100 ns turn-on with 3.5 Ω R_G).
t_r/t_f	16 ns / 30 ns - Enables >500 kHz switching in LLC resonant converters while limiting EMI generation.

Pinout & Package

IPB120N04S402ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level drive; requires low-impedance path to minimize ringing during fast transitions.
Pin 2 (Source)	Reference node for gate drive and current sensing	Common return for gate driver IC and shunt resistor; must be low-inductance to avoid false turn-on.
Pin 3 (Drain)	Main power output terminal	Exposed copper tab-must be soldered to ≥6 cm² PCB copper area for thermal management per JEDEC standards.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications including engine control units and EPS modules.
100% unclamped inductive switching (UIS) tested	Guarantees ruggedness against inductive kickback in motor drives without external protection components.
MSL1 rating (260 °C peak reflow)	Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns.
Optimized gate charge profile	Low Q_gd/Q_g ratio (14–32 nC / 103–134 nC) improves Miller immunity and reduces switching loss in hard-switched topologies.
Green product (RoHS compliant)	Meets EU Directive 2011/65/EU and automotive ELV requirements for hazardous substance restriction.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS)

Use Scenario: High-efficiency 12 V to 5 V/3.3 V conversion for ADAS camera modules and radar sensors.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch in buck converter stage operating at 300–600 kHz.

Use Value: 1.8 mΩ R_DS(on) minimizes conduction loss at 20–40 A loads, improving system efficiency by ≥1.2% over 2.5 mΩ alternatives.

Use Scenario: H-bridge motor driver for 12 V brushless steering assist motors.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase configuration handling peak currents up to 120 A.

Use Value: 175 °C rated junction temperature ensures reliability during sustained torque events under hood ambient temperatures up to 125 °C.

Start-Stop System Solenoids

On-Board Charger (OBC) Auxiliary Supplies

Use Scenario: High-current solenoid actuation in micro-hybrid vehicle start-stop systems.

IC Role / Device Role / Timing Role: Single-pole power switch replacing electromechanical relays, driven by PWM for soft-start control.

Use Value: 480 mJ avalanche energy rating eliminates need for external TVS clamping during solenoid coil de-energization.

Use Scenario: 12 V auxiliary supply generation from 400 V OBC DC link for control electronics and fans.

IC Role / Device Role / Timing Role: Primary switch in isolated flyback or forward converter operating at 100–200 kHz.

Use Value: Low Crss (60–138 pF) reduces capacitive coupling between drain and gate, improving noise immunity in high-dV/dt environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP120N04S4-02	Same die, TO-220-3-1 through-hole package; R_thJA = 62 K/W (leaded), no exposed drain pad.	Suitable for prototyping or low-volume industrial power supplies where manual assembly or heatsink mounting is preferred.	Select when mechanical mounting flexibility outweighs thermal performance; not recommended for automotive production due to MSL3 limitation.
STL120N4LH6	40 V, 120 A, 1.9 mΩ R_DS(on); ST's STripFET™ F7, lower Q_gd (10 nC), but no AEC-Q101 certification.	Acceptable for non-safety-critical consumer or industrial SMPS where automotive qualification is not mandated.	Choose only for cost-sensitive non-automotive designs; lacks required stress testing and traceability for OEM automotive BOMs.

Compared with IPP120N04S4-02 and STL120N4LH6, IPB120N04S402ATMA1 uniquely combines AEC-Q101 qualification, MSL1 reflow compatibility, and 0.95 K/W R_thJC-making it the sole option for volume automotive SMT power stages requiring both reliability and thermal density.

Availability

IPB120N04S402ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and start-stop solenoid drivers requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB120N04S402ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-T2 family-designed specifically for high-current, high-temperature 12 V automotive power switching applications demanding low R_DS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPB120N04S402ATMA1?

The absolute maximum V_GS is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable 12 V system design, gate drive should be clamped to +10 V/−5 V using Zener diodes or dedicated gate driver ICs with built-in protection.

Does IPB120N04S402ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to dampen ringing and control dV/dt. For 100 A switching with 3.5 Ω driver output impedance, a 5–10 Ω series resistor is recommended. Lower values improve switching speed but increase EMI; higher values reduce overshoot at the cost of increased switching loss.

Can IPB120N04S402ATMA1 be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Thermal coupling must be identical across all paralleled units, and gate drive paths must have equal length and impedance. Derate total current by 15% to account for parameter spread and ensure current sharing within ±10%.

Is the drain tab electrically isolated from the PCB ground plane in the PG-TO263-3-2 package?

No-the drain tab is electrically connected to Pin 3 (Drain) and must be soldered directly to a high-current copper pour tied to the system's high-side power rail. Electrical isolation requires insulating thermal interface material and a separate heatsink mounting scheme.

IPB120N04S402ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 110µA

Gate Charge (Qg) (Max) @ Vgs:: 134 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 158W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB120N04S402ATMA1 FAQ

1.How can I place an order for IPB120N04S402ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB120N04S402ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB120N04S402ATMA1 reliable?

The price and inventory of IPB120N04S402ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB120N04S402ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB120N04S402ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB120N04S402ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB120N04S402ATMA1?

IPB120N04S402ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB120N04S402ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB120N04S402ATMA1?

For technical support, including IPB120N04S402ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB120N04S402ATMA1 requirements.

6.How does Aetrix verify that IPB120N04S402ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB120N04S402ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB120N04S402ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB120N04S402ATMA1?

All IPB120N04S402ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB120N04S402ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB120N04S402ATMA1 part is unused and in its original packaging.

Return procedure for IPB120N04S402ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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