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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB120N04S4L02ATMA1

Name: IPB120N04S4L02ATMA1
Brand: Infineon Technologies
SKU: IPB120N04S4L02ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB120N04S4L02ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB120N04S4L02ATMA1.pdf

Description:: MOSFET N-CH 40V 120A D2PAK

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Product details

Overview

IPB120N04S4L02ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for high-current automotive and industrial switching applications. It delivers 120 A continuous drain current at T_C = 25°C, 40 V V_DS, and 1.7 mΩ R_DS(on) at V_GS = 10 V, with 100% avalanche-tested ruggedness and AEC-Q101 qualification. It is used in 12 V automotive DC-DC converters, motor control inverters, and battery disconnect switches.

For engineers reviewing the IPB120N04S4L02ATMA1 datasheet, IPB120N04S4L02ATMA1 pinout, IPB120N04S4L02ATMA1 application, or IPB120N04S4L02ATMA1 equivalent, key selection criteria include its 1.7 mΩ on-resistance at 10 V gate drive, 175°C junction temperature rating, MSL1 reflow compatibility, integrated body diode with 65 ns t_rr, and TO263-3 package thermal performance.

Technical Context

This MOSFET employs Infineon's OptiMOSTM-T2 trench-gate process to achieve low R_DS(on) while maintaining fast switching and robust short-circuit capability. Its gate threshold voltage (1.2–2.2 V) enables direct logic-level drive from 3.3 V/5 V microcontrollers without level-shifting.

The device integrates a co-packaged freewheeling diode with 0.9–1.3 V forward voltage at 100 A and 65 ns reverse recovery time, supporting synchronous rectification and bidirectional energy transfer in half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V automotive systems with load-dump margin.
R_DS(on) max	1.7 mΩ at V_GS = 10 V - Enables <1.7 W conduction loss at 100 A, critical for thermally constrained PCB layouts.
I_D cont	120 A at T_C = 25°C - Supports high-power motor drives and starter solenoid control without external heatsink in forced-air setups.
E_AS	480 mJ - Confirmed single-pulse avalanche energy ensures reliability during inductive turn-off transients in relay/snubberless designs.
t_rr	65 ns - Limits diode reverse-recovery losses in high-frequency (>50 kHz) PWM applications like BLDC controllers.
Q_g	143–190 nC - Determines gate driver power requirement; compatible with standard 2 A peak drivers at 100 kHz switching.
R_thJC	0.95 K/W - Enables direct thermal coupling to heatsink; allows 158 W dissipation at 25°C case temperature.

Pinout & Package

IPB120N04S4L02ATMA1 uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for low-inductance, high-current routing and enhanced thermal transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires <20 V absolute max; sensitive to ESD; routed with controlled impedance.
Pin 3 (Drain)	Power output (D)	Internally connected to large metal pad; serves as primary heat path and high-current output to load/bus.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood use per stress test requirements including temperature cycling, HTRB, and UHAST.
Logic-level gate drive	V_GS(th) range of 1.2–2.2 V enables direct interface with 3.3 V MCU GPIOs without gate driver ICs.
100% avalanche tested	Each unit undergoes single-pulse E_AS stress test at 480 mJ, ensuring field reliability in inductive switching.
MSL1 reflow rating	Rated for peak reflow temperatures up to 260°C, compatible with standard lead-free SMT assembly processes.
Integrated body diode	Optimized for fast recovery (t_rr = 65 ns) and low V_SD (0.9–1.3 V), reducing freewheeling losses in half-bridge operation.

Applications

Automotive Starter Circuit

12 V DC-DC Converter

Use Scenario: High-current engagement of vehicle starter motor via solenoid or solid-state relay.

IC Role / Device Role / Timing Role: Main power switch handling 120 A inrush and sustained cranking current.

Use Value: Low 1.7 mΩ R_DS(on) minimizes voltage drop and heat generation during multi-second cranking cycles.

Use Scenario: Primary switch in synchronous buck converter stepping 12 V battery to 3.3 V/5 V for infotainment ECUs.

IC Role / Device Role / Timing Role: High-side or low-side power FET operating at 200–500 kHz PWM frequency.

Use Value: Fast 65 ns t_rr and low Q_g reduce switching losses and enable >95% efficiency at 100 A output.

Industrial Motor Inverter

Battery Disconnect Switch

Use Scenario: Half-bridge leg in 3-phase inverter driving 5–10 kW BLDC motors in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element with integrated diode for regenerative braking current return.

Use Value: 175°C T_j rating and 0.95 K/W R_thJC allow operation in sealed enclosures without active cooling.

Use Scenario: Isolation switch between lithium-ion battery pack and main vehicle bus during fault conditions.

IC Role / Device Role / Timing Role: Fail-safe power MOSFET activated by safety controller to interrupt >100 A fault current.

Use Value: 480 mJ E_AS rating ensures controlled energy absorption during short-circuit interruption without destruction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 170 nC; same TO263-3 package; no AEC-Q101 documentation publicly available.	Not certified for automotive use; suitable for industrial motor drives but not under-hood deployment.	Select only if AEC qualification is not required and cost sensitivity outweighs qualification assurance.
IRFB4115PBF	R_DS(on) = 3.2 mΩ @ 10 V; higher conduction loss; TO220AB package; non-logic-level (V_GS(th) = 2–4 V); no avalanche testing data published.	Limited to lower-current (<60 A) applications; requires gate driver for reliable 3.3 V MCU interface.	Choose only when legacy TO220 footprint is mandatory and thermal budget permits higher R_DS(on).

Compared with STL220N4F7AG and IRFB4115PBF, IPB120N04S4L02ATMA1 offers verified AEC-Q101 compliance, lower on-resistance, and guaranteed avalanche ruggedness-making it the sole choice for safety-critical 12 V automotive power switching where reliability and qualification are non-negotiable.

Availability

IPB120N04S4L02ATMA1 is available at Aetrix Electronics and suitable for automotive starter circuits, 12 V DC-DC converters, industrial motor inverters, and battery disconnect switches requiring stable component supply across production lifecycles.

Supply support for IPB120N04S4L02ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOSTM-T2 family, engineered specifically for high-efficiency, high-reliability 12 V automotive power conversion and motor control applications demanding low R_DS(on), robust thermal performance, and AEC-Q101 qualification.

FAQ

Is IPB120N04S4L02ATMA1 suitable for 48 V mild-hybrid systems?

No. Its 40 V V_DS rating provides only 10 V margin above nominal 12 V systems and is insufficient for 48 V architectures, which require ≥60 V breakdown voltage to accommodate load dump transients. Use Infineon's 60 V or 75 V OptiMOSTM-5 devices instead.

Can this MOSFET be paralleled for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) (shown in Fig. 8 of the datasheet) ensures inherent current sharing. However, layout symmetry, matched gate drive paths, and individual source inductance control are essential to avoid dynamic imbalance at high dI/dt.

What is the maximum recommended gate resistor value for 100 kHz switching?

Based on Q_g = 165 nC (typ.) and 2 A peak gate driver capability, R_G ≤ 3.5 Ω ensures t_d(on)/t_r < 35 ns. Higher values increase switching losses and risk shoot-through in bridge configurations; 2.2–3.3 Ω is optimal for thermal and EMI balance.

Does the body diode support synchronous rectification in buck converters?

Yes-the diode's 65 ns t_rr and 0.9–1.3 V V_SD at 100 A make it viable for synchronous rectification at ≤200 kHz. However, for >300 kHz operation, a discrete Schottky or GaN FET is preferred due to lower Q_rr and faster recovery.

IPB120N04S4L02ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 110µA

Gate Charge (Qg) (Max) @ Vgs:: 190 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 14560 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 158W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB120N04S4L02ATMA1 FAQ

1.How can I place an order for IPB120N04S4L02ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB120N04S4L02ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB120N04S4L02ATMA1 reliable?

The price and inventory of IPB120N04S4L02ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB120N04S4L02ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB120N04S4L02ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB120N04S4L02ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB120N04S4L02ATMA1?

IPB120N04S4L02ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB120N04S4L02ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB120N04S4L02ATMA1?

For technical support, including IPB120N04S4L02ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB120N04S4L02ATMA1 requirements.

6.How does Aetrix verify that IPB120N04S4L02ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB120N04S4L02ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB120N04S4L02ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB120N04S4L02ATMA1?

All IPB120N04S4L02ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB120N04S4L02ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB120N04S4L02ATMA1 part is unused and in its original packaging.

Return procedure for IPB120N04S4L02ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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