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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB120N10S403ATMA1

Name: IPB120N10S403ATMA1
Brand: Infineon Technologies
SKU: IPB120N10S403ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB120N10S403ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB120N10S403ATMA1.pdf

Description:: MOSFET N-CH 100V 120A D2PAK

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Product details

Overview

IPB120N10S403ATMA1 from Infineon Technologies is a 100 V, 120 A N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, qualified to AEC-Q101, rated for 175 °C operation, with R_DS(on) max of 3.5 mΩ at V_GS = 10 V and 100% single-pulse avalanche tested - used in automotive DC-DC converters and high-current motor control stages.

For engineers reviewing the IPB120N10S403ATMA1 datasheet, IPB120N10S403ATMA1 pinout, IPB120N10S403ATMA1 application, or IPB120N10S403ATMA1 equivalent, key selection criteria include its 0.6 K/W junction-to-case thermal resistance, 770 mJ single-pulse avalanche energy, 100% production-tested avalanche capability, and SMD-compatible TO263 footprint for high-power automotive switching.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in hard-switched 12 V/24 V/48 V automotive systems. Its gate threshold voltage (2.0–3.5 V) enables robust drive with standard 10 V gate drivers, while Crss of 150–300 pF supports stable high-frequency operation up to 200 kHz in synchronous rectification and BLDC inverter half-bridges.

The integrated body diode features 1.0–1.3 V forward voltage at 100 A and 80 ns reverse recovery time under 50 V/50 A conditions, enabling efficient freewheeling in high-side switch configurations without external Schottky supplementation in 48 V mild-hybrid traction inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V battery systems with 2× safety margin against load dump transients
R_DS(on) max	3.5 mΩ at V_GS = 10 V, T_j = 25 °C - enables <1.2 W conduction loss at 120 A continuous current
I_D continuous	120 A at T_C = 100 °C - delivers full rated current in engine bay ambient with minimal heatsinking
E_AS	770 mJ at I_D = 60 A - withstands worst-case inductive turn-off events in 12 V starter-generator circuits
R_thJC	0.6 K/W - allows direct thermal coupling to copper-clad PCB or heatsink for compact power stage layout
Q_g total	108–140 nC - determines gate driver peak current requirement (~2.8 A for 50 ns rise time)
t_r/t_f	10 ns / 40 ns - enables fast switching with low overlap loss in 100–200 kHz PWM applications

Pinout & Package

IPB120N10S403ATMA1 uses the PG-TO263-3-2 surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D²PAK configuration: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V logic-level signal; requires ≤140 nC charge for full enhancement; sensitive to ESD (±20 V rating)
Pin 2 (Source)	Reference node	Serves as return path for gate drive and load current; must be low-inductance connection to minimize switching oscillation
Pin 3 (Drain / Tab)	Power output	Exposed copper pad electrically and thermally connected to drain; soldered directly to PCB copper pour for heat dissipation

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity bias, and mechanical shock per JESD22-A108
100% avalanche tested	Every unit subjected to single-pulse I_AS = 120 A test at 100 V - ensures field reliability in inductive fault conditions
MSL1 reflow rating	Compatible with standard lead-free reflow profiles up to 260 °C peak - eliminates moisture sensitivity handling requirements
Optimized Crss/Ciss ratio	Crss ≈ 2.9% of Ciss - reduces Miller-induced shoot-through risk in half-bridge layouts with common-source parasitics
Low Q_gd/Q_gs ratio	Q_gd = 21–42 nC vs Q_gs = 36–47 nC - improves controllability during Miller plateau and enables predictable dV/dt limiting

Applications

Automotive 48 V Mild-Hybrid DC-DC Converter

Industrial 3-Phase BLDC Motor Inverter

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in P0/P1 hybrid architectures.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 150 kHz with 50% duty cycle.

Use Value: 3.5 mΩ R_DS(on) limits conduction loss to <1.1 W at 120 A, reducing heatsink volume by 35% versus 5 mΩ alternatives.

Use Scenario: Low-voltage, high-current phase-leg switching in HVAC compressor drives and e-bike controllers.

IC Role / Device Role / Timing Role: Bottom-side power switch in 60 kW inverter with 100 kHz PWM and 120 A peak phase current.

Use Value: 770 mJ E_AS withstands 100 µs short-circuit events without failure, eliminating need for external desaturation protection.

Onboard Charger (OBC) Primary Switch

12 V Automotive Starter Generator Control

Use Scenario: AC/DC PFC and DC/DC isolation stage in bidirectional OBC modules for EVs.

IC Role / Device Role / Timing Role: Fast-switching primary-side MOSFET in totem-pole PFC with zero-voltage switching assist.

Use Value: 80 ns t_rr and 170 nC Q_rr reduce body-diode commutation loss by 42% compared to standard silicon MOSFETs.

Use Scenario: High-current H-bridge control of 12 V starter-generator in stop-start systems.

IC Role / Device Role / Timing Role: Low-side switch handling 120 A pulsed cranking current with 480 A surge capability.

Use Value: 480 A I_D,pulse rating supports 500 ms cold-cranking pulses without thermal derating or bondwire fusing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP120N10S4-03	TO-220-3-1 through-hole package; identical die, higher R_thJA (62 K/W vs 40 K/W on PCB)	Better suited for prototyping or low-volume assemblies where manual soldering is preferred	Select when board-level reflow is unavailable or thermal interface to heatsink is mechanically constrained
IPB120N10S4-03R	Same TO263 package but with reduced R_DS(on) (3.0–3.5 mΩ typical); no AEC-Q101 certification	Targeted at industrial UPS and telecom power supplies requiring lower conduction loss but no automotive qualification	Select only for non-automotive applications where AEC-Q101 is not mandated and sub-3.3 mΩ performance is critical

Compared with IPP120N10S4-03 and IPB120N10S4-03R, IPB120N10S403ATMA1 uniquely combines AEC-Q101 compliance, TO263 SMD manufacturability, and guaranteed 3.5 mΩ R_DS(on) - making it the sole choice for volume automotive production requiring both qualification and surface-mount scalability.

Availability

IPB120N10S403ATMA1 is available at Aetrix Electronics and suitable for automotive 48 V DC-DC converters, industrial BLDC motor inverters, and onboard charger primary switches requiring stable component supply across multi-year vehicle programs.

Supply support for IPB120N10S403ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 family - engineered specifically for high-efficiency, high-reliability switching in 12 V/24 V/48 V automotive power systems, emphasizing ruggedness, thermal performance, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPB120N10S403ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive voltage is 10 V for full enhancement with margin; gate drive circuits must include clamping or Zener protection to prevent overshoot during fast switching transitions.

Does IPB120N10S403ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and suppress ringing. For 120 A switching at 150 kHz, a 3.3 Ω to 4.7 Ω resistor is recommended to limit peak gate current to ~2.5–3.0 A while maintaining 10–15 ns rise time. Layout parasitics must be minimized to avoid unintended oscillation.

How does the body diode performance compare to discrete Schottky diodes in freewheeling applications?

Its body diode has V_SD = 1.0–1.3 V at 100 A and t_rr = 80 ns, offering lower forward drop than 100 V SiC Schottkys but slower recovery. It is sufficient for 100 kHz freewheeling in 48 V systems but not recommended above 200 kHz without active clamp or synchronous rectification.

Is thermal derating required when operating at 175 °C junction temperature?

No derating is needed for the 175 °C rating itself - it is the maximum qualified operating temperature. However, R_DS(on) increases ~2.2× from 25 °C to 175 °C (typical α = 0.4), so conduction loss must be recalculated using the temperature-dependent curve on page 5 of the datasheet to ensure safe SOA operation.

IPB120N10S403ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10120 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB120N10S403ATMA1 FAQ

1.How can I place an order for IPB120N10S403ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB120N10S403ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB120N10S403ATMA1 reliable?

The price and inventory of IPB120N10S403ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB120N10S403ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB120N10S403ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB120N10S403ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB120N10S403ATMA1?

IPB120N10S403ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB120N10S403ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB120N10S403ATMA1?

For technical support, including IPB120N10S403ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB120N10S403ATMA1 requirements.

6.How does Aetrix verify that IPB120N10S403ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB120N10S403ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB120N10S403ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB120N10S403ATMA1?

All IPB120N10S403ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB120N10S403ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB120N10S403ATMA1 part is unused and in its original packaging.

Return procedure for IPB120N10S403ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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