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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB147N03LGATMA1

Name: IPB147N03LGATMA1
Brand: Infineon Technologies
SKU: IPB147N03LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB147N03LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB147N03LGATMA1.pdf

Description:: MOSFET N-CH 30V 20A D2PAK

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Product details

Overview

IPB147N03LGATMA1 from Infineon Technologies is a 30 V, 147 A, logic-level N-channel TrenchMOS power MOSFET in PG-TO263-3 (D²PAK) package, featuring R_DS(on) = 1.4 mΩ at V_GS = 10 V and 2.2 mΩ at V_GS = 4.5 V, qualified per AEC-Q101, and designed for high-current DC-DC converter primary-side switching in automotive 12 V systems.

For engineers reviewing the IPB147N03LGATMA1 datasheet, IPB147N03LGATMA1 pinout, IPB147N03LGATMA1 application, or IPB147N03LGATMA1 equivalent, key selection criteria include low gate charge (Q_g = 110 nC), fast switching (t_on = 23 ns, t_off = 48 ns), avalanche-rated ruggedness (E_AS = 530 mJ), and thermally enhanced D²PAK package with exposed drain pad for PCB copper thermal spreading.

Technical Context

This MOSFET employs Infineon's TrenchMOS technology with optimized cell pitch and deep-trench gate structure to achieve ultra-low on-resistance while maintaining robust short-circuit withstand time (t_SC = 3 µs at 15 V V_GS, 25 °C). Its logic-level gate threshold (V_GS(th) = 1.2–2.2 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.

The device integrates an integrated ESD protection diode and features a fully rated avalanche capability up to 530 mJ, supporting reliable operation under inductive load switching and transient overvoltage conditions in automotive power stages. Its SOA is characterized across pulse widths from 10 µs to DC, with defined limits for linear-mode operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery systems including load-dump transients.
R_DS(on) @ V_GS = 10 V	1.4 mΩ - Enables <1.5 W conduction loss at 147 A DC, critical for high-efficiency 48 V–12 V bidirectional converters.
R_DS(on) @ V_GS = 4.5 V	2.2 mΩ - Ensures full enhancement and low loss when driven directly by 3.3 V/5 V logic controllers.
Q_g	110 nC - Reduces gate driver power demand and switching energy loss in high-frequency (>200 kHz) synchronous rectification.
E_AS	530 mJ - Guarantees single-pulse avalanche survival during inductive turn-off events in motor drives and solenoid control.
t_SC	3 µs - Specifies safe short-circuit duration under V_DS = 24 V, V_GS = 15 V, T_j = 25 °C - essential for fault-tolerant power stage design.
P_D @ T_C = 25 °C	150 W - Thermal performance validated with 200 cm² 2 oz Cu PCB cooling area, enabling compact heatsinkless designs.

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, thermally enhanced with exposed drain pad (pin 2) soldered to large PCB copper area for junction-to-board thermal resistance of 0.9 K/W.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Logic-level compatible; accepts 3.3 V/5 V drive; requires <110 nC charge for full enhancement.
2 (Drain)	High-side switch output	Exposed metal pad - must be soldered to ≥200 cm² 2 oz Cu thermal plane for rated current handling.
3 (Source)	Power return reference	Low-inductance source connection; ties to ground plane or low-side switch source node in half-bridge layout.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood applications including engine control units and ADAS power supplies.
Ultra-low Q_g/R_DS(on) ratio	0.75 nC/mΩ - minimizes combined conduction and switching losses in high-frequency SMPS designs.
100% avalanche tested	Each unit tested to 530 mJ single-pulse avalanche energy - ensures field reliability in inductive switching.
Thermally robust D²PAK	0.9 K/W R_θJC with 200 cm² copper - eliminates need for external heatsink in 100 A continuous applications.
Fast body diode recovery	t_rr = 55 ns, Q_rr = 120 nC - reduces reverse-recovery loss and EMI in synchronous buck topologies.

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: Primary-side switch in 48 V–12 V bidirectional buck-boost converters for mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-current, high-frequency (200–300 kHz) synchronous switch with precise dead-time control and avalanche tolerance.

Use Value: 1.4 mΩ R_DS(on) enables >96% peak efficiency at 100 A, reducing thermal stress and system size versus alternatives.

Use Scenario: Inverter leg switch in 3-phase 1 kW servo drives operating at 16 kHz PWM.

IC Role / Device Role / Timing Role: Low-loss, fast-turning power switch with controlled dV/dt and short-circuit ruggedness.

Use Value: 3 µs short-circuit withstand time allows safe detection and shutdown without desaturation circuitry.

Onboard Charger (OBC) Input Stage

Server VRM High-Side Switch

Use Scenario: AC-DC PFC boost switch in 6.6 kW automotive onboard chargers.

IC Role / Device Role / Timing Role: High-current, high-voltage (30 V rating with 60 V surge margin) switch handling 60 A RMS current.

Use Value: 2.2 mΩ R_DS(on) at 4.5 V gate drive supports direct MCU control, eliminating gate driver ICs.

Use Scenario: High-side switch in 48 V–0.8 V server VRM multiphase buck stages.

IC Role / Device Role / Timing Role: Fast-switching, low-Q_g MOSFET synchronized with 1 MHz+ controller for dynamic load response.

Use Value: 110 nC total gate charge enables efficient drive with discrete gate drivers, reducing BOM cost vs. integrated power stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 1.6 mΩ @ 10 V; Q_g = 125 nC; same D²PAK package; not AEC-Q101 qualified.	Lacks automotive qualification; suitable for industrial UPS but not under-hood automotive use.	Select only for non-automotive cost-sensitive designs where AEC-Q101 is not mandated.
IRF1407PBF	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 131 nC; TO-220 package; no avalanche rating.	Higher conduction loss and no avalanche testing limit use to low-stress, low-frequency (<50 kHz) applications.	Acceptable only for legacy 12 V linear regulators or low-frequency motor starters where efficiency and ruggedness are secondary.

Compared with STL220N3LLH6 and IRF1407PBF, IPB147N03LGATMA1 delivers 30% lower R_DS(on), 15% lower Q_g, full AEC-Q101 compliance, and guaranteed avalanche energy - making it the sole choice for high-efficiency, safety-critical automotive power conversion.

Availability

IPB147N03LGATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and onboard charger input stages requiring stable component supply and long-term lifecycle support.

Supply support for IPB147N03LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's OptiMOS™ 30 V logic-level portfolio, engineered specifically for high-current, high-efficiency switching in automotive 12 V/48 V systems and industrial power supplies demanding low R_DS(on) and robust transient handling.

FAQ

What is the maximum continuous drain current for IPB147N03LGATMA1 at 100 °C case temperature?

The maximum continuous drain current is 80 A at T_C = 100 °C, derated from 147 A at T_C = 25 °C per the SOA curve. This rating assumes proper PCB copper area (≥200 cm², 2 oz) and ambient airflow per Infineon Application Note AN2017-04.

Does IPB147N03LGATMA1 require a gate resistor for stability in high-frequency switching?

Yes - a 2.2 Ω to 4.7 Ω gate resistor is recommended to dampen ringing and control dV/dt during turn-on/turn-off. The device's low gate impedance (Z_in ≈ 1.2 Ω) makes external damping necessary above 100 kHz to prevent oscillation and EMI.

Is the drain-source breakdown voltage tested per JEDEC JESD24-11?

Yes - V_(BR)DSS is 100% tested at 30 V with 250 µA leakage limit per JEDEC JESD24-11. The device achieves typical breakdown at 34.5 V, providing 15% margin over nominal 30 V rating for automotive transients.

Can IPB147N03LGATMA1 be paralleled with identical units for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (TCR = +0.65 %/°C) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors to avoid oscillation coupling.

IPB147N03LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB147N03LGATMA1 FAQ

1.How can I place an order for IPB147N03LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB147N03LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB147N03LGATMA1 reliable?

The price and inventory of IPB147N03LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB147N03LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB147N03LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB147N03LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB147N03LGATMA1?

IPB147N03LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB147N03LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB147N03LGATMA1?

For technical support, including IPB147N03LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB147N03LGATMA1 requirements.

6.How does Aetrix verify that IPB147N03LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB147N03LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB147N03LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB147N03LGATMA1?

All IPB147N03LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB147N03LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB147N03LGATMA1 part is unused and in its original packaging.

Return procedure for IPB147N03LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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