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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB160N04S4H1ATMA1

Name: IPB160N04S4H1ATMA1
Brand: Infineon Technologies
SKU: IPB160N04S4H1ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB160N04S4H1ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB160N04S4H1ATMA1.pdf

Description:: MOSFET N-CH 40V 160A TO263-7

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Product details

Overview

IPB160N04S4H1ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode power MOSFET in PG-TO263-7-3 package, rated for 40 V V_DS, 160 A continuous drain current at T_C = 25 °C, and ultra-low 1.6 mΩ R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is 100% avalanche tested - deployed in automotive high-current DC-DC converters and motor control inverters.

For engineers reviewing the IPB160N04S4H1ATMA1 datasheet, IPB160N04S4H1ATMA1 pinout, IPB160N04S4H1ATMA1 application, or IPB160N04S4H1ATMA1 equivalent, key selection criteria include its 0.9 K/W R_thJC, 105–137 nC total gate charge, 8400–10920 pF input capacitance, and integrated avalanche ruggedness for transient load switching in safety-critical vehicle subsystems.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust drive compatibility with standard 5 V and 3.3 V logic controllers, while the 5.2 V gate plateau voltage supports stable Miller region control during hard-switching transitions.

The MOSFET integrates a co-packaged freewheeling diode with 160 A continuous forward current rating, 0.9–1.3 V V_SD at 100 A, and 56 ns t_rr - enabling synchronous rectification and bidirectional energy recovery in H-bridge and buck-boost topologies without external diode addition.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 24 V nominal automotive battery systems including load dump transients.
R_DS(on)	1.4–1.6 mΩ @ V_GS = 10 V - Enables <1.6 W conduction loss at 100 A, critical for thermal management in compact power modules.
I_D (cont.)	160 A @ T_C = 25 °C - Supports high-current motor phase legs and starter solenoid drivers without parallel devices.
E_AS	400 mJ - Confirmed single-pulse avalanche energy allows safe operation under inductive turn-off stress without snubber circuits.
Q_g	105–137 nC - Defines gate driver power requirement and switching speed trade-off in PWM frequencies up to 100 kHz.
t_r/t_f	22 ns / 33 ns - Fast edge rates reduce switching losses but require careful PCB layout to suppress EMI in EMC-sensitive zones.
R_thJC	0.9 K/W - Enables direct heatsink mounting with predictable thermal path for junction-to-case temperature modeling.

Pinout & Package

Package: PG-TO263-7-3 (D²PAK-7), surface-mount, thermally enhanced with exposed drain pad and 7-terminal configuration. Pin 1–3: Source; Pin 4: Gate; Pin 5–7: Drain (parallel internal connection).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source node for all three internal die segments; low-inductance return path for high di/dt current loops.
4	Gate	Control terminal requiring <137 nC charge; isolated from drain by 20 V max V_GS rating and 100 nA leakage.
5, 6, 7	Drain	Internally paralleled drain connections tied to exposed copper pad; primary thermal and current path to heatsink.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, and UHAST.
100% unclamped inductive switching (UIS) tested	Each unit verified for 400 mJ single-pulse avalanche energy - eliminates need for design margin assumptions on surge robustness.
MSL1 reflow rating	Compatible with lead-free soldering profiles up to 260 °C peak, supporting automated SMT assembly without moisture sensitivity concerns.
Ultra-low R_DS(on) × Q_g figure of merit	~160 mΩ·nC - balances conduction and switching losses for optimal efficiency in 20–100 kHz switching converters.
Integrated Schottky-like body diode	V_SD = 0.9–1.3 V @ 100 A ensures low reverse conduction loss and 56 ns t_rr minimizes diode recovery spikes in synchronous rectifiers.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Inverters

Use Scenario: 12 V to 48 V bi-directional buck-boost conversion in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch handling 160 A continuous output with synchronized gate control.

Use Value: 1.6 mΩ R_DS(on) reduces conduction loss below 2.6 W at full load, enabling >96% peak efficiency without forced air cooling.

Use Scenario: Three-phase motor drive for column-assist EPS systems with torque ripple <5%.

IC Role / Device Role / Timing Role: Low-side switching element in 60 kHz PWM-controlled inverter leg.

Use Value: 56 ns diode t_rr and 73 nC Q_rr minimize shoot-through risk and EMI during commutation, improving steering responsiveness.

Start-Stop Battery Management

On-Board Charger (OBC) Input Stage

Use Scenario: High-current solenoid and relay replacement in intelligent battery disconnect units (BDUs).

IC Role / Device Role / Timing Role: Solid-state main contactor switch controlling 12 V battery feed to vehicle loads.

Use Value: 160 A continuous rating and 640 A pulsed capability support cold-cranking surges without derating or thermal shutdown.

Use Scenario: AC/DC front-end PFC boost switch in 3.3 kW OBC designs.

IC Role / Device Role / Timing Role: Fast-switching, low-loss boost transistor operating at 65 kHz with soft-switching assist.

Use Value: 8400–10920 pF C_iss and 14–32 nC Q_gd enable precise zero-voltage switching timing control and reduced gate driver losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N04S4H1ATMA1	Higher I_D (180 A), identical V_DS and R_DS(on) (1.4–1.6 mΩ), same package and AEC-Q101 grade.	Marginally higher thermal mass; suited for extended duty cycles above 150 A average current.	Select when system-level current derating requires ≥20 A headroom at 100 °C case temperature.
IRFB4115PBF	Legacy TO-220AB package, 40 V V_DS, 150 A I_D, 2.4 mΩ R_DS(on), no AEC-Q101 qualification.	Limited to non-automotive industrial use; lacks MSL1 reflow rating and 175 °C operation.	Only acceptable for cost-sensitive 12 V industrial SMPS where automotive reliability and thermal specs are not required.

Compared with IPB180N04S4H1ATMA1, this part trades 20 A current headroom for identical thermal and switching performance; versus IRFB4115PBF, it delivers 33% lower R_DS(on), AEC-Q101 compliance, and superior thermal resistance - making it the only qualified choice for production automotive electronics.

Availability

IPB160N04S4H1ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering inverters, and start-stop battery management systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB160N04S4H1ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS®-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 24 V automotive subsystems including ADAS, electrified powertrains, and body electronics.

FAQ

What is the maximum allowable gate-source voltage for IPB160N04S4H1ATMA1?

The absolute maximum V_GS is ±20 V, with recommended operating range of –10 V to +10 V. Exceeding ±20 V risks permanent gate oxide damage. The typical gate threshold voltage is 2.0–4.0 V, and gate plateau occurs at 5.2 V - ensuring reliable turn-on with standard 5 V logic-level drivers.

Does IPB160N04S4H1ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 100 kHz PWM with 137 nC Q_g, a 3.5 Ω resistor (as used in Infineon's reference test conditions) provides optimal trade-off between switching speed and ringing suppression. Layout parasitics may necessitate 2.2–4.7 Ω depending on driver strength and trace inductance.

Can IPB160N04S4H1ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing ~0.5%/°C) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors. Derating to 80% of total rated current per device is recommended for thermal stability across 175 °C operation.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated diode supports 160 A continuous forward current and 640 A pulsed current, with 0.9–1.3 V V_SD at 100 A and 56 ns t_rr. It is fully characterized for synchronous operation in buck and half-bridge topologies, though external Schottky diodes may be preferred for <100 ns t_rr requirements in ultra-high-frequency designs.

IPB160N04S4H1ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 110µA

Gate Charge (Qg) (Max) @ Vgs:: 137 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10920 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB160N04S4H1ATMA1 FAQ

1.How can I place an order for IPB160N04S4H1ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB160N04S4H1ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB160N04S4H1ATMA1 reliable?

The price and inventory of IPB160N04S4H1ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB160N04S4H1ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB160N04S4H1ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB160N04S4H1ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB160N04S4H1ATMA1?

IPB160N04S4H1ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB160N04S4H1ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB160N04S4H1ATMA1?

For technical support, including IPB160N04S4H1ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB160N04S4H1ATMA1 requirements.

6.How does Aetrix verify that IPB160N04S4H1ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB160N04S4H1ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB160N04S4H1ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB160N04S4H1ATMA1?

All IPB160N04S4H1ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB160N04S4H1ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB160N04S4H1ATMA1 part is unused and in its original packaging.

Return procedure for IPB160N04S4H1ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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