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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB160N04S4LH1ATMA1

Name: IPB160N04S4LH1ATMA1
Brand: Infineon Technologies
SKU: IPB160N04S4LH1ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB160N04S4LH1ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB160N04S4LH1ATMA1.pdf

Description:: MOSFET N-CH 40V 160A TO263-7

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Product details

Overview

IPB160N04S4LH1ATMA1 from Infineon Technologies is a 40 V, 160 A N-channel logic-level enhancement-mode MOSFET in PG-TO263-7-3 package, qualified to AEC standards for automotive powertrain and body control modules, with R_DS(on) = 1.5 mΩ at V_GS = 10 V and 100% single-pulse avalanche tested to 400 mJ.

For engineers reviewing the IPB160N04S4LH1ATMA1 datasheet, IPB160N04S4LH1ATMA1 pinout, IPB160N04S4LH1ATMA1 application, or IPB160N04S4LH1ATMA1 equivalent, key selection criteria include its 1.5 mΩ on-resistance at 10 V gate drive, 175 °C maximum junction temperature, MSL1 reflow compatibility, integrated freewheeling diode with 1.3 V forward voltage, and 640 A pulsed drain current capability.

Technical Context

This OptiMOSTM-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current DC-DC converters and motor drivers. Its gate plateau voltage of 3.0 V enables robust logic-level drive from 3.3 V/5 V microcontrollers, while the 146–190 nC total gate charge supports efficient PWM operation up to several hundred kHz.

The MOSFET integrates a fast-recovery body diode (t_rr = 60 ns, Q_rr = 80 nC) and exhibits stable R_DS(on) over temperature (1.2–2.0 mΩ across 25–175 °C at I_D = 100 A), making it suitable for synchronous rectification and bidirectional energy transfer in 12 V/48 V automotive systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems with transient margin.
R_DS(on) @ V_GS=10 V	1.5 mΩ max - Enables <1.6 W conduction loss at 160 A continuous, reducing heatsink requirements.
I_D continuous	160 A @ T_C=100 °C - Sustains full rated current under engine bay thermal conditions.
E_AS	400 mJ - Withstands inductive turn-off energy without failure in motor control or solenoid drive.
t_rr / Q_rr	60 ns / 80 nC - Minimizes reverse recovery losses and EMI in synchronous buck or half-bridge topologies.
Q_g	146–190 nC - Supports efficient gate driving with standard MOSFET drivers (e.g., 1EDN7512B) at ≤500 kHz.
T_j max	+175 °C - Certified for under-hood applications including transmission control units and EPS.

Pinout & Package

IPB160N04S4LH1ATMA1 is housed in a surface-mount PG-TO263-7-3 package with exposed drain pad for thermal performance and 7 terminals: 3 parallel drain pins, 3 source pins, and 1 gate pin. The package meets MSL1 rating for lead-free reflow up to 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
D1–D3	Drain (parallel)	Low-inductance, high-current path to DC bus; electrically tied internally for 160 A handling.
S1–S3	Source (parallel)	Current return path with Kelvin sensing capability; reduces layout-induced gate oscillation.
G	Gate	Logic-level input requiring ≥3.0 V plateau for reliable turn-on; isolated from power paths.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain use per stress test requirements (HTOL, TC, HTRB).
100% avalanche tested	Each unit verified to withstand 400 mJ single-pulse avalanche energy without parametric shift.
Logic-level gate drive	V_GS(th) = 1.2–2.2 V ensures full enhancement with 3.3 V MCU outputs, eliminating level-shifter need.
Green product (RoHS)	Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU and JESD204.
Thermal resistance R_thJC	0.9 K/W - Enables >160 W dissipation with minimal ΔT between junction and heatsink.

Applications

Electric Power Steering (EPS)

Automotive DC-DC Converters

Use Scenario: High-side and low-side switching in 12 V → 48 V bi-directional buck-boost converters for steer-by-wire assist.

IC Role / Device Role / Timing Role: Main power switch handling 160 A peak load during torque assist transients.

Use Value: 1.5 mΩ R_DS(on) and 60 ns t_rr reduce conduction + recovery losses by >25% vs. legacy 2.2 mΩ devices.

Use Scenario: Primary-side synchronous rectifier in 3 kW on-board charger auxiliary supply.

IC Role / Device Role / Timing Role: Low-side switch in interleaved phase-shifted full-bridge topology.

Use Value: 175 °C T_j rating allows operation at 125 °C case temperature without derating in sealed enclosures.

Transmission Control Units (TCU)

Engine Start-Stop Solenoid Drivers

Use Scenario: Clutch actuation valve driver with 100 ms pulse-width modulation at 12 V battery supply.

IC Role / Device Role / Timing Role: High-current load switch with integrated freewheeling diode for inductive kickback suppression.

Use Value: 1.3 V V_SD and 80 nC Q_rr minimize diode conduction loss and switching noise during valve de-energization.

Use Scenario: Starter motor engagement solenoid control in 12 V start-stop systems with frequent cycling.

IC Role / Device Role / Timing Role: Robust main switch subjected to repeated 640 A pulsed currents during cranking.

Use Value: 640 A I_D,pulse and 400 mJ E_AS ensure reliability over 100,000+ cycles without bondwire fatigue.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF8AG	R_DS(on) = 1.7 mΩ @ 10 V; Q_g = 170 nC; same PG-TO263-7-3 package.	Higher gate charge increases driver loss; slightly lower avalanche rating (350 mJ).	Acceptable where gate drive strength exceeds 2 A peak and system avalanche margin is relaxed.
IRFS7537PBF	R_DS(on) = 1.8 mΩ @ 10 V; TO-220AB package; non-AEC qualified; no MSL1 rating.	Not suitable for automotive production; limited to industrial prototypes or non-safety-critical designs.	Only for cost-sensitive non-automotive applications where qualification and reflow compliance are not required.

Compared with STL220N4LF8AG and IRFS7537PBF, IPB160N04S4LH1ATMA1 delivers superior thermal robustness (0.9 K/W vs. ≥1.2 K/W), guaranteed AEC-Q101 compliance, and higher avalanche energy margin-critical for safety-related 12 V power distribution in modern vehicles.

Availability

IPB160N04S4LH1ATMA1 is available at Aetrix Electronics and suitable for electric power steering, transmission control units, and automotive DC-DC converters requiring stable component supply across multi-year vehicle production programs.

Supply support for IPB160N04S4LH1ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and wafer fabrication facilities.

This device belongs to the OptiMOSTM-T2 family, engineered specifically for high-efficiency, high-reliability 12 V automotive power switching-emphasizing low R_DS(on), logic-level drive, and AEC-Q101 qualification.

FAQ

What is the maximum allowable gate-source voltage for IPB160N04S4LH1ATMA1?

The absolute maximum V_GS is +20 V / –16 V. Operation beyond ±16 V risks permanent gate oxide damage. For reliable logic-level drive, keep V_GS between 4.5 V and 10 V-verified to deliver full 160 A current with R_DS(on) ≤ 2.0 mΩ across temperature.

Does IPB160N04S4LH1ATMA1 include an integrated body diode, and what are its key parameters?

Yes-it features a monolithic fast-recovery body diode with I_S = 160 A continuous, V_SD = 0.9–1.3 V at 100 A and 25 °C, t_rr = 60 ns, and Q_rr = 80 nC. This diode is fully characterized and qualified for synchronous rectification and freewheeling in hard-switched topologies.

Can IPB160N04S4LH1ATMA1 be used in paralleled configurations, and what layout considerations apply?

Yes-the PG-TO263-7-3 package supports paralleling via matched gate resistors and symmetrical PCB routing. Critical practices include equal-length gate traces, Kelvin source connections to avoid current imbalance, and shared thermal interface to maintain <5 °C junction temperature delta between devices at 160 A.

Is the IPB160N04S4LH1ATMA1 suitable for 48 V mild-hybrid systems?

No-its 40 V V_DS rating provides insufficient margin for 48 V nominal systems with ISO 7637-2 load-dump transients (up to 60 V). It is designed for 12 V architectures only. For 48 V applications, consider Infineon's 75 V or 100 V OptiMOSTM-5 devices such as IPB180N08S5L-03.

IPB160N04S4LH1ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 110µA

Gate Charge (Qg) (Max) @ Vgs:: 190 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 14950 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB160N04S4LH1ATMA1 FAQ

1.How can I place an order for IPB160N04S4LH1ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB160N04S4LH1ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB160N04S4LH1ATMA1 reliable?

The price and inventory of IPB160N04S4LH1ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB160N04S4LH1ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB160N04S4LH1ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB160N04S4LH1ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB160N04S4LH1ATMA1?

IPB160N04S4LH1ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB160N04S4LH1ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB160N04S4LH1ATMA1?

For technical support, including IPB160N04S4LH1ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB160N04S4LH1ATMA1 requirements.

6.How does Aetrix verify that IPB160N04S4LH1ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB160N04S4LH1ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB160N04S4LH1ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB160N04S4LH1ATMA1?

All IPB160N04S4LH1ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB160N04S4LH1ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB160N04S4LH1ATMA1 part is unused and in its original packaging.

Return procedure for IPB160N04S4LH1ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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