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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB180N04S401ATMA1

Name: IPB180N04S401ATMA1
Brand: Infineon Technologies
SKU: IPB180N04S401ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB180N04S401ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB180N04S401ATMA1.pdf

Description:: MOSFET N-CH 40V 180A TO263-7

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Product details

Overview

IPB180N04S401ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-7-3 package, rated for 40 V V_DS, 1.3 mΩ R_DS(on) at 100 A/10 V, and 180 A continuous drain current at T_C = 100 °C. It delivers ultra-low conduction loss in automotive high-current switching applications such as 12 V battery disconnect and motor control.

For engineers reviewing the IPB180N04S401ATMA1 datasheet, IPB180N04S401ATMA1 pinout, IPB180N04S401ATMA1 application, or IPB180N04S401ATMA1 equivalent, key selection criteria include its 1.3 mΩ on-resistance, 100% avalanche-tested ruggedness, 175 °C maximum junction temperature, and MSL1 reflow compatibility - all critical for under-hood automotive power stages.

Technical Context

This device employs trench-gate silicon technology optimized for low R_DS(on) × Q_g figure-of-merit, enabling high-efficiency synchronous rectification and load switching. Its gate threshold voltage (2.0–4.0 V) ensures robust noise immunity while supporting standard 10 V gate drive.

Thermal performance is defined by a 0.8 K/W junction-to-case resistance and validated 550 mJ single-pulse avalanche energy at I_D = 90 A. The integrated body diode exhibits 0.9–1.3 V forward voltage at 100 A and 64 ns reverse recovery time.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V automotive systems with transient margin
R_DS(on)	1.3 mΩ max @ 100 A, 10 V - Enables <1.3 W conduction loss at 100 A, reducing heatsink requirements
I_D cont.	180 A @ T_C = 100 °C - Supports high-current battery switching without derating in compact layouts
E_AS	550 mJ @ I_D = 90 A - Confirmed avalanche ruggedness for inductive load turn-off stress
T_j max	+175 °C - Rated for under-hood operation in engine control units and DC-DC converters
Q_g	176 nC max - Determines gate driver power requirement and switching speed trade-off
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with standard logic-level gate drivers
V_SD	1.3 V max @ 100 A - Low body diode forward drop improves freewheeling efficiency in H-bridge topologies

Pinout & Package

IPB180N04S401ATMA1 uses the PG-TO263-7-3 surface-mount package with exposed drain pad for thermal performance. Pin assignment is verified per Infineon's official marking diagram and mechanical drawing.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal (low-side reference)	Common return path for load current; electrically tied to PCB ground plane
2 (Gate)	Control input	Receives gate drive signal; requires low-inductance routing to minimize ringing
3 (Drain)	Main power output	Connected to high-current trace or copper pour; primary thermal path to PCB
4–7 (Drain)	Drain terminals (parallel)	Four additional drain pads reduce current density and improve thermal spreading across PCB

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements
100% unclamped inductive switching (UIS) tested	Guarantees single-pulse avalanche capability up to 550 mJ without failure
Ultra-low R_DS(on) × Q_g	Optimized for high-frequency switching with minimal gate drive loss and conduction loss trade-off
MSL1 rating (260 °C peak reflow)	Enables standard lead-free SMT assembly without moisture sensitivity concerns
Green product (RoHS compliant)	Meets EU Directive 2011/65/EU with no restricted substances above threshold limits

Applications

Automotive Battery Disconnect Switch

12 V Starter Motor Control

Use Scenario: High-side isolation of 12 V battery during vehicle sleep mode to prevent parasitic drain.

IC Role / Device Role / Timing Role: Power MOSFET acting as main current path switch with fast turn-on/turn-off controlled by microcontroller GPIO.

Use Value: 1.3 mΩ R_DS(on) limits voltage drop to <0.23 V at 180 A, minimizing power loss and thermal rise in confined fuse box space.

Use Scenario: Bidirectional current control in starter solenoid interface circuits for start-stop systems.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration driving starter relay coil or pre-charge circuit.

Use Value: 175 °C T_j rating ensures reliability during repeated cranking cycles where ambient exceeds 125 °C.

Electric Power Steering (EPS) Motor Driver

DC-DC Converter Primary Switch

Use Scenario: High-current phase leg switch in 3-phase inverter for brushless EPS motor.

IC Role / Device Role / Timing Role: N-channel power transistor in low-side position with synchronous gate drive timing.

Use Value: 64 ns t_rr and 88 nC Q_rr reduce commutation losses and EMI during PWM transitions at 20–50 kHz.

Use Scenario: Primary-side switch in 12 V to 5 V/3.3 V buck converter for ADAS domain controllers.

IC Role / Device Role / Timing Role: Main switching transistor handling peak currents up to 180 A during transient load steps.

Use Value: 0.8 K/W R_thJC enables direct mounting to 6 cm² copper area, achieving <40 °C ΔT at full load without external heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N04S402ATMA1	Same die, identical R_DS(on) and ratings, but marked "4N0402" and shipped in different reel packaging	No functional difference; used interchangeably in same PCB design	Select when requiring alternate logistics code or tape-and-reel configuration
IRFB7546PBF	Higher R_DS(on) (1.8 mΩ), lower I_D (140 A), non-AEC-Q101, TO-220AB package	Limited to non-automotive industrial use; lacks under-hood thermal and reliability validation	Only consider for cost-sensitive non-automotive prototypes where AEC qualification is not required

Compared with IPB180N04S401ATMA1, the 402 variant offers identical electrical and thermal performance with packaging differentiation, while IRFB7546PBF trades automotive qualification and current capability for legacy footprint compatibility - making the original part optimal for production-grade automotive power stages.

Availability

IPB180N04S401ATMA1 is available at Aetrix Electronics and suitable for automotive battery management, electric power steering, 12 V DC-DC conversion, and starter motor control requiring stable component supply across multi-year vehicle programs.

Supply support for IPB180N04S401ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, headquartered in Munich.

This device belongs to the OptiMOS™-T2 power MOSFET product line, engineered specifically for high-current, high-reliability 12 V automotive power switching applications with emphasis on low R_DS(on), avalanche robustness, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPB180N04S401ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement, with minimum 6 V ensuring reliable conduction at elevated temperatures. Gate resistors must be selected to limit dV/dt-induced overshoot during fast switching.

Does IPB180N04S401ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control switching speed and suppress oscillation. For typical 12 V automotive H-bridge operation at 20–50 kHz, a 3.5 Ω resistor is validated in the datasheet for 10 V gate drive. Lower values increase switching loss and EMI; higher values slow turn-on and raise conduction loss during transition.

Can IPB180N04S401ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables current sharing in parallel operation. Layout must ensure matched gate drive paths and symmetrical drain/source copper areas. Thermal coupling via shared heatsink or PCB copper is essential to maintain uniform junction temperature across devices.

Is the body diode suitable for continuous freewheeling in synchronous rectifier applications?

The integrated body diode supports continuous forward current up to 180 A at T_C = 100 °C and has a typical V_SD of 0.9 V at 100 A. However, its 64 ns t_rr and 88 nC Q_rr make it less efficient than external Schottky diodes in high-frequency (>100 kHz) synchronous rectification - best suited for lower-frequency motor drive freewheeling.

IPB180N04S401ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 140µA

Gate Charge (Qg) (Max) @ Vgs:: 176 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB180N04S401ATMA1 FAQ

1.How can I place an order for IPB180N04S401ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB180N04S401ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB180N04S401ATMA1 reliable?

The price and inventory of IPB180N04S401ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB180N04S401ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB180N04S401ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB180N04S401ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB180N04S401ATMA1?

IPB180N04S401ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB180N04S401ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB180N04S401ATMA1?

For technical support, including IPB180N04S401ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB180N04S401ATMA1 requirements.

6.How does Aetrix verify that IPB180N04S401ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB180N04S401ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB180N04S401ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB180N04S401ATMA1?

All IPB180N04S401ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB180N04S401ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB180N04S401ATMA1 part is unused and in its original packaging.

Return procedure for IPB180N04S401ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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