Infineon Technologies IPB180N04S4H0ATMA1

Overview

IPB180N04S4H0ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-7-3 package, rated for 40 V V_DS, 180 A continuous drain current at T_C = 100 °C, and ultra-low 0.9–1.1 mΩ R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is 100% avalanche tested for automotive motor control and high-current DC-DC converter applications.

For engineers reviewing the IPB180N04S4H0ATMA1 datasheet, IPB180N04S4H0ATMA1 pinout, IPB180N04S4H0ATMA1 application, or IPB180N04S4H0ATMA1 equivalent, key selection criteria include its 0.6 K/W R_thJC, 173–225 nC total gate charge, 13.8–17.9 nF input capacitance, integrated body diode with 73 ns t_rr, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-duty-cycle automotive power stages. Its gate plateau voltage of 5.0 V enables robust drive margin with standard 5-V logic-level controllers, while the 100% single-pulse avalanche rating (E_AS = 850 mJ at I_D = 90 A) supports unclamped inductive switching in motor phase legs.

The MOSFET features a monolithic integrated Schottky-like body diode with V_SD = 0.9–1.3 V at 100 A and Q_rr = 108 nC, enabling efficient synchronous rectification and reduced reverse recovery loss in buck converters and H-bridge inverters.

Key Specifications

Pinout & Package

IPB180N04S4H0ATMA1 is housed in PG-TO263-7-3 (D²PAK-7) surface-mount package with exposed drain pad for thermal performance and 7 terminals: 3 parallel source pins, 1 gate, 1 sense gate, and 2 drain connections (main + Kelvin).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with IPB180N04S4H0ATMA1, IPB180N04S4-02 trades Kelvin sensing for cost reduction, while STL220N4F7AG offers higher current headroom at the expense of gate drive complexity and lack of integrated sensing-making the original optimal for noise-sensitive automotive inverter designs requiring precise V_GS control.

Availability

IPB180N04S4H0ATMA1 is available at Aetrix Electronics and suitable for automotive motor control, high-current DC-DC conversion, and on-board charger designs requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB180N04S4H0ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 product line, engineered specifically for high-efficiency, high-reliability automotive power conversion where low R_DS(on), ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB180N04S4H0ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable enhancement, V_GS must be ≥6 V; the gate threshold voltage range is 2.0–4.0 V at 180 µA, and the gate plateau occurs at 5.0 V, making 10 V the recommended drive level for minimum R_DS(on) and robust noise immunity.

Does IPB180N04S4H0ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For 100–200 kHz switching with a 2 A gate driver, a 3.5 Ω resistor is validated in the datasheet (t_d(on) = 44 ns, t_r = 24 ns). Lower values increase switching speed but raise EMI risk; higher values reduce losses in gate driver ICs but extend transition times and increase switching loss.

How is the Kelvin source pin used in PCB layout?

The Kelvin source (Pin 1) must be routed separately from high-current source paths to the gate driver's reference ground. It carries only sensing current (<1 mA), so it should connect directly to the driver's source sense input with minimal trace length and no shared vias or planes with power return paths-ensuring accurate V_GS regulation despite high di/dt in the main source loop.

Can IPB180N04S4H0ATMA1 replace mechanical relays in battery disconnect units?

Yes-it is rated for 180 A continuous and 720 A pulsed current, with 100% avalanche testing and 175 °C operation, making it suitable for solid-state contactor replacement in 48 V battery systems. Its low R_DS(on) yields <2 W conduction loss at 180 A, eliminating arcing and enabling diagnostic current monitoring via Kelvin sense pins.