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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB180N06S4H1ATMA2

Name: IPB180N06S4H1ATMA2
Brand: Infineon Technologies
SKU: IPB180N06S4H1ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB180N06S4H1ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB180N06S4H1ATMA2.pdf

Description:: MOSFET N-CH 60V 180A TO263-7

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Product details

Overview

IPB180N06S4H1ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-7-3 package, featuring 60 V V_DS, 1.7 mΩ max R_DS(on) at V_GS = 10 V, 180 A continuous drain current at T_C = 25 °C, and 100% avalanche tested for robustness in automotive high-current switching applications such as electric power steering and on-board chargers.

For engineers reviewing the IPB180N06S4H1ATMA2 datasheet, IPB180N06S4H1ATMA2 pinout, IPB180N06S4H1ATMA2 application, or IPB180N06S4H1ATMA2 equivalent, key selection criteria include ultra-low R_DS(on), 175 °C operating temperature capability, MSL1 reflow compatibility, integrated avalanche ruggedness, and thermal resistance of 0.60 K/W junction-to-case.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology to achieve ultra-low conduction losses while maintaining fast switching performance. Its gate charge profile (Q_g = 208–270 nC, Q_gd = 22.5–45 nC) supports efficient hard-switching in 48 V automotive systems with minimal Miller-induced turn-on risk.

The MOSFET integrates a robust body diode with t_rr = 60 ns and Q_rr = 90 nC at T_j = 25 °C, enabling reliable freewheeling in synchronous rectification and bidirectional DC-DC converters without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V nominal automotive battery systems including load dump transients.
R_DS(on) max	1.7 mΩ at V_GS = 10 V - Enables <1.7 W conduction loss at 100 A, critical for thermally constrained motor drive PCBs.
I_D cont	180 A at T_C = 25 °C - Supports high-current phase legs in EPS and traction inverters without parallel devices.
E_AS	700 mJ - Guaranteed single-pulse avalanche energy allows safe operation under inductive switching fault conditions.
R_thJC	0.60 K/W - Enables direct heatsink mounting with predictable thermal path for junction temperature control up to 175 °C.
Q_g	208–270 nC - Determines gate driver power requirement and switching loss trade-off in PWM frequencies up to 100 kHz.
t_r/t_f	5 ns / 15 ns - Fast edge rates reduce switching transition time, minimizing overlap losses in half-bridge configurations.

Pinout & Package

PG-TO263-7-3 (D²PAK-7) package with exposed drain pad for low-inductance, high-current PCB mounting and thermal dissipation. Pin 1–7 follow standard D²PAK-7 layout: pins 1–3 = source, pin 4 = gate, pins 5–7 = drain (common tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1, 2, 3	Source (S)	Low-side return path; three parallel terminals reduce source inductance and improve current sharing in high-di/dt applications.
Pin 4	Gate (G)	Control input requiring ≤20 V absolute rating; gate threshold 2.0–4.0 V enables TTL/CMOS-compatible driving with margin.
Pin 5, 6, 7 + Tab	Drain (D)	Main power output terminal; large copper area minimizes R_DS(on) contribution and enhances thermal transfer to heatsink.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity bias, and mechanical shock per JESD22 standards.
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 700 mJ, ensuring field reliability in inductive load switching.
MSL1 rating	Compatible with lead-free reflow profiles up to 260 °C peak, eliminating moisture sensitivity handling requirements.
Ultra-low R_DS(on)	1.3 mΩ typical at 100 A enables >98% efficiency in 48 V/100 A buck stages with minimal heatsinking.
175 °C operating temperature	Supports placement near heat sources (e.g., motor windings or IGBT modules) without derating in engine bay environments.

Applications

Electric Power Steering (EPS)

On-Board Charger (OBC) Primary Switch

Use Scenario: High-current H-bridge motor driver controlling 12–48 V brushless steering assist motors under transient torque loads.

IC Role / Device Role / Timing Role: Low-side power switch with fast turn-off (<15 ns fall time) to minimize shoot-through risk during PWM commutation.

Use Value: 180 A continuous rating and 720 A pulsed capability eliminate need for paralleling, reducing PCB area and gate drive complexity.

Use Scenario: Primary-side switching element in 3.3 kW interleaved LLC resonant converter for EV charging.

IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 100–200 kHz with controlled dV/dt via optimized Q_gd/Q_gs ratio.

Use Value: 0.60 K/W R_thJC enables direct heatsink mounting, maintaining T_j < 125 °C at full load without forced air.

48 V DC-DC Converter Secondary Side

Traction Inverter Half-Bridge Module

Use Scenario: Synchronous rectifier in isolated 48 V–12 V bi-directional buck-boost converter for vehicle electrification.

IC Role / Device Role / Timing Role: Body diode-assisted freewheeling switch with 60 ns t_rr and low V_SD (0.6–1.3 V) to minimize conduction loss during dead-time.

Use Value: Integrated diode eliminates discrete Schottky, reducing BOM count and improving thermal coupling between switch and rectifier paths.

Use Scenario: Phase-leg switch in compact 10–20 kW auxiliary traction inverter for hybrid powertrain cooling pumps and compressors.

IC Role / Device Role / Timing Role: High-current, high-reliability power switch rated for 175 °C ambient and 100% avalanche survival during short-circuit events.

Use Value: AEC-Q101 qualification and 100% avalanche testing ensure functional safety compliance without additional protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 1.8 mΩ (typ), Q_g = 240 nC, same PG-TO263-7-3 package, but not AEC-Q101 qualified.	Limited to industrial-grade 48 V converters where automotive qualification is not mandated.	Select when cost sensitivity outweighs automotive certification requirements and thermal margin permits slightly higher R_DS(on).
IRFP4868PbF	Higher R_DS(on) (2.4 mΩ), TO-247 package, no AEC-Q101, lower Q_gd (18 nC), but larger footprint and inferior thermal resistance (0.75 K/W).	Suitable for legacy industrial UPS or solar inverters where board space and thermal design allow larger package.	Choose only if existing TO-247 heatsink infrastructure exists and AEC-Q101 is unnecessary.

Compared with STL220N6F7 and IRFP4868PbF, IPB180N06S4H1ATMA2 delivers superior automotive qualification, lower conduction loss, and better thermal performance in a surface-mount package-making it the preferred choice for next-generation 48 V automotive power systems requiring zero-failure tolerance.

Availability

IPB180N06S4H1ATMA2 is available at Aetrix Electronics and suitable for electric power steering, on-board chargers, and 48 V DC-DC converters requiring stable component supply across multi-year automotive production programs.

Supply support for IPB180N06S4H1ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability 48 V automotive power conversion where low R_DS(on), avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB180N06S4H1ATMA2?

The absolute maximum V_GS is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive voltage is 10 V for full R_DS(on) optimization, with minimum 6 V required to maintain specified I_D performance across temperature. Gate resistors must be selected to limit dv/dt-induced ringing within this voltage window.

Does IPB180N06S4H1ATMA2 require a negative gate voltage for turn-off in high-noise automotive environments?

No. The device has a gate threshold voltage of 2.0–4.0 V and is fully enhanced at 0 V gate potential. A negative gate voltage is not required for reliable turn-off. However, applying –5 V during off-state improves noise immunity in high-dV/dt environments by increasing the noise margin against spurious turn-on.

Can IPB180N06S4H1ATMA2 be used in parallel configurations?

Yes, its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherent current sharing. Successful paralleling requires matched gate drive loop inductance, symmetrical PCB layout, and individual gate resistors. Derating to 80% of total rated current per device is recommended for thermal stability under transient loads.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes. The integrated body diode is rated for 180 A continuous forward current and exhibits low V_SD (0.6–1.3 V) and fast t_rr (60 ns). It is designed for sustained freewheeling in synchronous buck and LLC topologies, though external Schottky may still be used for ultra-low-loss 12 V output stages where V_SD reduction justifies added cost and area.

IPB180N06S4H1ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 270 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 21900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7

IPB180N06S4H1ATMA2 FAQ

1.How can I place an order for IPB180N06S4H1ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB180N06S4H1ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB180N06S4H1ATMA2 reliable?

The price and inventory of IPB180N06S4H1ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB180N06S4H1ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB180N06S4H1ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB180N06S4H1ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB180N06S4H1ATMA2?

IPB180N06S4H1ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB180N06S4H1ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB180N06S4H1ATMA2?

For technical support, including IPB180N06S4H1ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB180N06S4H1ATMA2 requirements.

6.How does Aetrix verify that IPB180N06S4H1ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB180N06S4H1ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB180N06S4H1ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB180N06S4H1ATMA2?

All IPB180N06S4H1ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB180N06S4H1ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB180N06S4H1ATMA2 part is unused and in its original packaging.

Return procedure for IPB180N06S4H1ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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