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Infineon Technologies IPB180P04P403ATMA2

Part No.:
IPB180P04P403ATMA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab)
Datasheet:
AetrixIPB180P04P403ATMA2.pdf
Description:
MOSFET P-CH 40V 180A TO263-7
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,741

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Product details

Overview

IPB180P04P403ATMA2 from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for high-current automotive and industrial switching applications. It delivers -180 A continuous drain current at TC=25°C, -40 V VDS rating, and 2.8 mΩ RDS(on) at VGS=-10 V, with AEC-Q101 qualification and 175°C maximum junction temperature. It is used in 12 V/24 V battery disconnect, reverse polarity protection, and high-side load switching circuits.

For engineers reviewing the IPB180P04P403ATMA2 datasheet, IPB180P04P403ATMA2 pinout, IPB180P04P403ATMA2 application, or IPB180P04P403ATMA2 equivalent, key selection criteria include its MSL1 reflow compatibility, 100% avalanche-tested ruggedness, low gate charge (Qg = 190–250 nC), and thermal resistance of 1.0 K/W (junction-to-case).

Technical Context

This OptiMOS®-P2 device uses trench-based silicon technology to achieve low RDS(on) and high pulsed current capability (-720 A). Its gate threshold voltage range (-2.0 to -4.0 V) ensures robust turn-on margin under noisy automotive supply conditions.

The integrated body diode supports synchronous rectification and reverse recovery (trr = 83 ns, Qrr = 131 nC) in bidirectional power paths. Thermal design is enabled by the PG-TO263-7-3 package's exposed drain tab and validated 1.0 K/W RthJC.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-40 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin
RDS(on)2.8 mΩ max at VGS = -10 V - Enables <1.5 W conduction loss at 180 A DC
ID cont-180 A at TC = 25°C - Supports high-power battery switching without parallel devices
EAS90 mJ - Withstands single-pulse inductive energy in motor control or solenoid drive
Qg190–250 nC - Determines gate driver power requirement and switching speed trade-off
RthJC1.0 K/W - Allows direct heatsink mounting for thermal management in space-constrained modules
trr83 ns - Limits reverse recovery losses in high-frequency PWM or bidirectional DC/DC

Pinout & Package

IPB180P04P403ATMA2 is housed in the PG-TO263-7-3 surface-mount package with an exposed drain tab for thermal and electrical connection. The package features 7 terminals and is RoHS-compliant and green-qualified.

Pin/TerminalCircuit RoleDesign Meaning
1GateControl input requiring -10 V for full enhancement; sensitive to ESD (±20 V absolute max)
2, 3, 5, 6, 7SourceCommon return path for load current; electrically tied internally and externally for low-inductance layout
4 + TabDrainMain power output terminal; tab provides primary thermal path to heatsink and low-resistance current path

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive powertrain and chassis applications per stress test requirements
100% avalanche testedEach unit withstands single-pulse inductive energy up to 90 mJ without failure
MSL1, 260°C peak reflowCompatible with standard lead-free SMT assembly processes without moisture sensitivity risk
175°C operating temperatureEnables placement near hot components (e.g., inverters, DC/DC converters) without derating
Low Qgd/Qg ratioQgd = 35–70 nC / Qg = 190–250 nC → improves hard-switching efficiency and EMI behavior

Applications

Battery Disconnect SwitchReverse Polarity Protection

Use Scenario: High-current main battery isolation in 12 V/24 V commercial vehicle ECUs during sleep mode or fault shutdown.

IC Role / Device Role / Timing Role: P-channel high-side switch controlled via microcontroller GPIO with level-shifting.

Use Value: -180 A rating eliminates need for paralleling; 2.8 mΩ RDS(on) limits voltage drop to <0.5 V at full load, preserving system efficiency.

Use Scenario: Protecting downstream electronics from incorrect battery connection in ADAS camera modules and infotainment head units.

IC Role / Device Role / Timing Role: Low-loss series pass element placed between battery and power rail, conducting only when polarity is correct.

Use Value: Integrated body diode enables fast response (<1 µs turn-on); -40 V VDS accommodates transients up to ISO 7637-2 Pulse 5a.

High-Side Load SwitchMotor Control H-Bridge Upper Arm

Use Scenario: Controlled power delivery to HVAC blowers, seat heaters, or lighting loads in body control modules.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays, driven by PWM or on/off logic.

Use Value: 1.0 K/W RthJC allows direct PCB copper pour cooling; AEC qualification ensures reliability over 15-year vehicle lifetime.

Use Scenario: Upper quadrant switch in brushed DC motor drivers for power steering or wiper systems.

IC Role / Device Role / Timing Role: High-side switch synchronized with complementary low-side N-MOSFET in half-bridge topology.

Use Value: 83 ns trr and 131 nC Qrr minimize shoot-through risk and commutation losses during direction reversal.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-current switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB180N04S4-02N-channel counterpart with identical RDS(on) (2.0 mΩ typ), but requires high-side gate driverSuitable where bootstrap or isolated gate drive is available; not drop-in for simple logic-level controlSelect when higher efficiency justifies added gate drive complexity and board area
STP180P4LLH6Higher RDS(on) (3.8 mΩ max), lower ID (-120 A), no AEC qualificationLimited to non-automotive industrial use; lacks 100% avalanche test and MSL1 ratingAcceptable for cost-sensitive non-automotive designs where thermal margin is sufficient

Compared with IPB180P04P403ATMA2, the N-channel IPB180N04S4-02 offers lower conduction loss but increases system BOM and layout complexity, while the STP180P4LLH6 trades automotive reliability and current capability for lower cost in benign environments.

Availability

IPB180P04P403ATMA2 is available at Aetrix Electronics and suitable for automotive battery management, industrial motor drives, and high-reliability power distribution systems requiring stable component supply across multi-year production cycles.

Supply support for IPB180P04P403ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS®-P2 product line, engineered specifically for high-efficiency, high-reliability P-channel switching in 12 V/24 V automotive power networks and demanding industrial power stages.

FAQ

What is the maximum allowable gate-source voltage for IPB180P04P403ATMA2?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to -10 V for full enhancement and 0 V for turn-off, with transient overshoot suppressed using clamping or RC snubbing.

Does IPB180P04P403ATMA2 require a gate resistor, and if so, what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. Based on typical gate charge (Qg ≈ 220 nC) and desired turn-on time (~100 ns), a 3.3 Ω to 10 Ω resistor is recommended. Lower values improve switching speed but increase gate driver stress; higher values reduce EMI but raise switching losses.

Can IPB180P04P403ATMA2 be used in parallel configurations?

Yes, but with strict layout and thermal symmetry. The device exhibits positive RDS(on) temperature coefficient, enabling current sharing. However, matching gate drive impedance, minimizing source inductance imbalance, and ensuring uniform heatsinking across all paralleled units are mandatory to avoid thermal runaway.

Is the drain tab electrically isolated from other pins in the PG-TO263-7-3 package?

No - the drain tab is electrically connected to pin 4 and forms the primary drain terminal. It must be mounted to a grounded or negative-potential heatsink. Electrical isolation requires insulating hardware (e.g., silicone pad, ceramic washer) and careful creepage/clearance verification per IPC-2221.

IPB180P04P403ATMA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ P2
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs:
250 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
17640 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-7-3

IPB180P04P403ATMA2 FAQ

1.How can I place an order for IPB180P04P403ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB180P04P403ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB180P04P403ATMA2 reliable?

The price and inventory of IPB180P04P403ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB180P04P403ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB180P04P403ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB180P04P403ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB180P04P403ATMA2?

IPB180P04P403ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB180P04P403ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB180P04P403ATMA2?

For technical support, including IPB180P04P403ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB180P04P403ATMA2 requirements.

6.How does Aetrix verify that IPB180P04P403ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB180P04P403ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB180P04P403ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB180P04P403ATMA2?

All IPB180P04P403ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB180P04P403ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB180P04P403ATMA2 part is unused and in its original packaging.

Return procedure for IPB180P04P403ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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