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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB339N20NM6ATMA1

Name: IPB339N20NM6ATMA1
Brand: Infineon Technologies
SKU: IPB339N20NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB339N20NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB339N20NM6ATMA1.pdf

Description:: MOSFET

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Product details

Overview

IPB339N20NM6ATMA1 from Infineon Technologies is an N-channel 200 V OptiMOSTM 6 power MOSFET in D²PAK (PG-TO263-3) package, featuring 33.9 mΩ max R_DS(on) at V_GS = 10 V, 39 A continuous drain current, and 175 °C maximum junction temperature. It delivers high avalanche energy (104 mJ), low Q_rr (234 nC @ 1000 A/µs), and optimized gate charge × R_DS(on) figure-of-merit for high-efficiency DC-DC converters and motor drives.

For engineers reviewing the IPB339N20NM6ATMA1 datasheet, IPB339N20NM6ATMA1 pinout, IPB339N20NM6ATMA1 application, or IPB339N20NM6ATMA1 equivalent, key selection criteria include its 200 V V_DS, 33.9 mΩ R_DS(on), 15.9 nC total gate charge, 48 nC output charge, and D²PAK thermal performance with 0.6 °C/W R_thJC.

Technical Context

This device employs Infineon's 6th-generation OptiMOSTM trench-gate process to achieve ultra-low on-resistance and fast switching with minimized reverse recovery charge. Its 200 V breakdown voltage supports industrial 160 V bus systems, while the 175 °C rated junction enables operation in thermally constrained environments without derating.

The MOSFET integrates a robust body diode with 75–486 nC Q_rr (dependent on di/dt), enabling hard-switched topologies with reduced switching losses. Gate plateau voltage of 6.9 V ensures stable turn-on under noisy gate drive conditions, and the 5.9 Ω internal gate resistance aids in controlling dv/dt during commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Supports 160 V DC bus applications with 25 % safety margin
R_DS(on), max	33.9 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 39 A continuous current
I_D, cont	39 A @ T_C = 25 °C - Sustains full load in compact heatsink designs
Q_G	15.9 nC - Low gate drive power requirement for 100–500 kHz switching
Q_rr	234 nC @ 1000 A/µs - Reduces turn-off loss and EMI in high-di/dt circuits
E_AS	104 mJ - Withstands single-pulse inductive energy without failure
R_thJC	0.6 °C/W - Enables >100 W power dissipation with minimal case-to-heatsink ΔT

Pinout & Package

IPB339N20NM6ATMA1 uses the PG-TO263-3 (D²PAK) package with exposed drain tab for enhanced thermal conduction. The package features three terminals: Drain (tab and Pin 2), Gate (Pin 1), and Source (Pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts 10–15 V logic-level drive; internal R_G = 5.9 Ω limits peak gate current
Pin 2 / Tab	Drain	Main power input; electrically connected to exposed copper tab for direct heatsink mounting and lowest R_thJC
Pin 3	Source	Power return and gate reference; forms common node with driver ground in high-side configurations

Key Features

Feature	Design Value
OptiMOSTM 6 trench technology	Delivers 33.9 mΩ R_DS(on) at 200 V - industry-leading FOM for this voltage class
100 % avalanche tested	Guarantees single-pulse ruggedness up to 104 mJ - eliminates need for external snubbers in inductive loads
175 °C operating temperature	Enables full 39 A rating in sealed enclosures or high-ambient industrial environments
Pb-free, halogen-free, MSL 1	Complies with RoHS and IEC61249-2-21 - suitable for lead-free reflow and long-term reliability programs

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 48–72 V BLDC motor inverters for HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 39 A peak phase current with <100 ns switching transitions.

Use Value: Low Q_rr (234 nC) minimizes cross-conduction loss and reduces heatsink size by 35 % vs. legacy 200 V MOSFETs.

Use Scenario: Primary-side switch in isolated 1 kW telecom DC-DC modules with 48 V input and 12 V output.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz; withstands 100 V V_DS spikes during flyback reset.

Use Value: 0.6 °C/W R_thJC allows 125 W dissipation with ≤75 °C case rise - eliminates forced air cooling.

Solar Microinverter DC Link

EV Onboard Charger PFC Stage

Use Scenario: DC link switch in 250–300 V string-level microinverters with bidirectional capability.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in boost PFC front-end; operates at 65 kHz with 100 % duty cycle margin.

Use Value: 200 V V_DS and 104 mJ E_AS support safe operation during grid fault transients without clamping.

Use Scenario: Boost switch in 6.6 kW OBC PFC stage interfacing 400 V battery with AC grid.

IC Role / Device Role / Timing Role: Fast-switching power transistor handling 13 A RMS current and 1000 A/µs di/dt during zero-crossing events.

Use Value: 75–486 nC Q_rr range (di/dt-dependent) enables predictable soft-recovery behavior across full load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP34N20	R_DS(on) = 45 mΩ (max), Q_G = 22 nC, no Q_rr spec provided	Lacks documented avalanche rating and reverse recovery characterization	Prefer IPB339N20NM6ATMA1 where hard-switched inductive loads or high di/dt are present
IXTP30N20P	R_DS(on) = 42 mΩ (max), T_j max = 150 °C, TO-220 package	Higher thermal resistance (R_thJC ≈ 1.2 °C/W) limits power density	Choose IPB339N20NM6ATMA1 for space-constrained designs requiring >100 W dissipation

Compared with STP34N20 and IXTP30N20P, IPB339N20NM6ATMA1 offers superior conduction efficiency (33.9 mΩ), higher thermal capability (175 °C), and verified high-di/dt reverse recovery performance - critical for reliable operation in modern high-frequency PFC and motor control stages.

Availability

IPB339N20NM6ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, EV onboard chargers, and high-power DC-DC converters requiring stable component supply and long-lifecycle support.

Supply support for IPB339N20NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM 6 family - engineered for high-efficiency, high-reliability power conversion in industrial and renewable energy systems where low R_DS(on), ruggedness, and thermal performance are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 28 A for V_GS = 10 V, as specified in Table 2 of the datasheet. This reflects thermal de-rating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, not gate drive limitation.

Is the body diode suitable for synchronous rectification?

No - the integrated body diode has high Q_rr (75–486 nC) and relatively slow trr (26–63 ns), making it unsuitable for synchronous rectification. External Schottky or GaN FETs are recommended for that function in high-frequency topologies.

Does IPB339N20NM6ATMA1 require negative gate voltage for reliable turn-off?

No - the device is a normal-level N-channel MOSFET with V_GS(th) of 3.0–4.5 V and no requirement for negative gate bias. Stable turn-off is achieved with 0 V gate drive; -20 V absolute maximum rating is for transient protection only.

Can this MOSFET be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Diagram 9) ensures inherent current sharing when paralleled. Layout symmetry and individual gate resistors (≥5 Ω) are required to balance dynamic current distribution during switching transitions.

IPB339N20NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Ta), 39A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V, 15V

Rds On (Max) @ Id, Vgs:: 31.8mOhm @ 26A, 15V

Vgs(th) (Max) @ Id:: 4.5V @ 52µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB339N20NM6ATMA1 FAQ

1.How can I place an order for IPB339N20NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB339N20NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB339N20NM6ATMA1 reliable?

The price and inventory of IPB339N20NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB339N20NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB339N20NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB339N20NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB339N20NM6ATMA1?

IPB339N20NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB339N20NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB339N20NM6ATMA1?

For technical support, including IPB339N20NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB339N20NM6ATMA1 requirements.

6.How does Aetrix verify that IPB339N20NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB339N20NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB339N20NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB339N20NM6ATMA1?

All IPB339N20NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB339N20NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB339N20NM6ATMA1 part is unused and in its original packaging.

Return procedure for IPB339N20NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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