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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB45N06S4L08ATMA3

Name: IPB45N06S4L08ATMA3
Brand: Infineon Technologies
SKU: IPB45N06S4L08ATMA3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB45N06S4L08ATMA3

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB45N06S4L08ATMA3.pdf

Description:: MOSFET N-CH 60V 45A TO263-3

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Product details

Overview

IPB45N06S4L08ATMA3 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 45 A continuous drain current at T_C = 25°C, and 7.9 mΩ max R_DS(on) at V_GS = 10 V. It delivers high-current switching in automotive powertrain control modules, battery disconnect units, and 12 V/48 V dual-battery DC-DC converters.

For engineers reviewing the IPB45N06S4L08ATMA3 datasheet, IPB45N06S4L08ATMA3 pinout, IPB45N06S4L08ATMA3 application, or IPB45N06S4L08ATMA3 equivalent, key selection criteria include its 175°C operating temperature, 100% avalanche-tested ruggedness, low gate charge (Q_g = 49–64 nC), and SMD-optimized thermal resistance (R_thJC = 2.1 K/W).

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V and 5 V logic-level drive compatibility, and integrated body diode supports synchronous rectification with t_rr = 33 ns and Q_rr = 32 nC.

The MOSFET features a fully characterized safe operating area (SOA) up to 100 µs pulse width and supports unclamped inductive switching with E_AS = 97 mJ at I_D = 22.5 A. Thermal design is enabled by validated junction-to-case resistance (2.1 K/W) and PCB-cooling-area-dependent R_thJA (40 K/W with 6 cm² copper).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports 12 V and 48 V automotive systems with margin against load dump transients
R_DS(on) max	7.9 mΩ @ V_GS = 10 V - Enables <1.8 W conduction loss at 45 A, reducing heatsink requirements
I_D cont	45 A @ T_C = 25°C - Rated for high-current motor drivers and battery switches without derating
Q_g	49–64 nC - Low gate drive energy supports efficient 100–200 kHz PWM operation in DC-DC stages
E_AS	97 mJ - Confirmed single-pulse avalanche capability eliminates need for external snubbers in inductive loads
t_rr	33 ns - Fast body diode recovery minimizes switching loss and shoot-through risk in half-bridge topologies
T_j max	+175°C - Qualified for under-hood applications including engine control and transmission solenoid drivers

Pinout & Package

IPB45N06S4L08ATMA3 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab. The three terminals are arranged in standard configuration for automated assembly and thermal pad soldering to PCB copper areas.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives logic-level gate drive; requires ≤16 V absolute max; low input capacitance (C_iss = 3680–4780 pF) reduces driver loading
2 (Drain)	High-side or low-side power path	Exposed metal tab; electrically connected to drain; must be soldered to ≥6 cm² copper for R_thJA = 40 K/W
3 (Source)	Reference node / return path	Common connection for gate drive return and load current return; defines local ground reference for gate control

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive power electronics per stress test requirements including HTOL, TC, HTRB, and UHAST
100% avalanche tested	Each unit passes single-pulse unclamped inductive switching test at I_AS = 45 A and E_AS = 97 mJ
Green Product (RoHS)	Lead-free termination and halogen-free molding compound compliant with EU Directive 2011/65/EU
MSL1 rating	Rated for peak reflow temperatures up to 260°C, enabling compatibility with standard lead-free SMT processes
Optimized R_DS(on)/Q_g ratio	Delivers 7.0 mΩ typ. R_DS(on) with only 56.5 nC avg. Q_g, balancing conduction and switching losses

Applications

Automotive Engine Control Unit (ECU)

48 V Mild Hybrid Battery Disconnect Switch

Use Scenario: High-side switching of fuel injector drivers and ignition coil primary circuits in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling 12 V inductive loads with precise 1–10 ms on-time pulses.

Use Value: 175°C rating ensures reliability near hot engine blocks; avalanche ruggedness prevents failure during coil flyback events.

Use Scenario: Isolation of 48 V Li-ion traction battery from vehicle subsystems during fault conditions or sleep mode.

IC Role / Device Role / Timing Role: Bidirectional blocking switch activated via MCU-controlled gate driver.

Use Value: 60 V rating provides margin above 48 V nominal; 45 A continuous rating supports >2 kW power transfer with minimal thermal derating.

On-Board Charger (OBC) Primary Side Switch

Electric Power Steering (EPS) Motor Phase Driver

Use Scenario: High-frequency switching in PFC and LLC resonant converter stages of bidirectional OBCs.

IC Role / Device Role / Timing Role: Main switching element in totem-pole PFC or half-bridge LLC primary.

Use Value: Low Q_g and fast t_r/t_f enable >150 kHz operation; low C_oss improves ZVS behavior in resonant topologies.

Use Scenario: Low-side switching in three-phase inverter driving 12 V brushed or brushless EPS motors.

IC Role / Device Role / Timing Role: PWM-controlled phase leg switch with integrated body diode commutation.

Use Value: 33 ns t_rr and 32 nC Q_rr reduce reverse recovery loss and EMI during freewheeling transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP45N06S4L-08	Same die, TO-220-3-1 through-hole package; R_thJC = 2.1 K/W identical, but R_thJA = 62 K/W (no PCB copper benefit)	Suitable for prototyping, lower-volume industrial controls where manual assembly or heatsink mounting is preferred	Select when board space allows TO-220 footprint and thermal management uses external heatsink rather than PCB copper
IPB45N06S4-08	Legacy OptiMOS-T1 version; higher R_DS(on) (9.0 mΩ max), higher Q_g (72 nC), no AEC-Q101 qualification	Acceptable for non-automotive industrial motor drives where qualification and efficiency margins are relaxed	Choose only if cost sensitivity outweighs thermal performance and automotive compliance requirements

Compared with IPP45N06S4L-08 and IPB45N06S4-08, IPB45N06S4L08ATMA3 offers superior thermal performance in SMD layouts, full automotive qualification, and optimized switching parameters-making it the preferred choice for production-grade automotive power modules requiring long-term reliability and high power density.

Availability

IPB45N06S4L08ATMA3 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V mild hybrid battery management, and on-board charger designs requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB45N06S4L08ATMA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability automotive and industrial switching applications demanding low R_DS(on), fast switching, and extended temperature operation.

FAQ

What is the maximum gate-source voltage rating for IPB45N06S4L08ATMA3?

The absolute maximum gate-source voltage is ±16 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is 10 V for full R_DS(on) optimization, with minimum 4.5 V sufficient to achieve <14 mΩ on-resistance in most conditions.

Does IPB45N06S4L08ATMA3 require a gate resistor for stability?

Yes-a series gate resistor (typically 3.5–10 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on due to dV/dt coupling. The datasheet specifies t_d(on), t_r, t_d(off), and t_f using R_G = 3.5 Ω, confirming its use in characterization.

Can IPB45N06S4L08ATMA3 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with T_j) enables inherent current sharing. Layout symmetry, matched gate drive paths, and shared thermal mass are required. Derating to 80% of total rated current per device is advised for reliability.

Is the drain tab electrically isolated in the PG-TO263-3-2 package?

No-the drain is directly connected to the exposed metal tab. This tab must be soldered to a PCB copper pour serving as both thermal path and electrical drain node. Electrical isolation requires insulating hardware or a separate heatsink with dielectric interface material.

IPB45N06S4L08ATMA3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ T2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.9mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 4780 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB45N06S4L08ATMA3 FAQ

1.How can I place an order for IPB45N06S4L08ATMA3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB45N06S4L08ATMA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB45N06S4L08ATMA3 reliable?

The price and inventory of IPB45N06S4L08ATMA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB45N06S4L08ATMA3 is usually 5 days.

3.What payment methods are accepted for IPB45N06S4L08ATMA3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB45N06S4L08ATMA3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB45N06S4L08ATMA3?

IPB45N06S4L08ATMA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB45N06S4L08ATMA3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB45N06S4L08ATMA3?

For technical support, including IPB45N06S4L08ATMA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB45N06S4L08ATMA3 requirements.

6.How does Aetrix verify that IPB45N06S4L08ATMA3 is sourced from the original manufacturer or authorized distributors?

All IPB45N06S4L08ATMA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB45N06S4L08ATMA3 meets industry standards.

7.What is the process for return or replacement of IPB45N06S4L08ATMA3?

All IPB45N06S4L08ATMA3 units undergo pre-shipment inspection (PSI). If there is an issue with IPB45N06S4L08ATMA3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB45N06S4L08ATMA3 part is unused and in its original packaging.

Return procedure for IPB45N06S4L08ATMA3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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