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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB50R140CPATMA1

Name: IPB50R140CPATMA1
Brand: Infineon Technologies
SKU: IPB50R140CPATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB50R140CPATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB50R140CPATMA1.pdf

Description:: MOSFET N-CH 550V 23A TO263-3

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Inventory:1,000

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Product details

Overview

IPB50R140CPATMA1 from Infineon Technologies is a 500 V, 140 mΩ silicon N-channel CoolMOS™ C7 power MOSFET in PG-TO263-7 package, rated for 21 A continuous drain current at T_C = 100 °C and optimized for high-efficiency SMPS in server PSUs and telecom rectifiers.

For engineers reviewing the IPB50R140CPATMA1 datasheet, IPB50R140CPATMA1 pinout, IPB50R140CPATMA1 application, or IPB50R140CPATMA1 equivalent, key selection criteria include R_DS(on) at V_GS = 10 V, gate charge Q_G = 38 nC, E_oss = 31 nJ, thermal resistance R_thJC = 0.9 K/W, and avalanche ruggedness rating of 100 mJ (single pulse).

Technical Context

This device employs Infineon's 7th-generation superjunction MOSFET technology with optimized charge balancing for reduced conduction and switching losses. Its low gate charge (Q_G = 38 nC) and low output charge (Q_oss = 22 nC) enable high-frequency operation up to 300 kHz in LLC resonant converters.

The integrated fast-recovery body diode (t_rr = 110 ns, Q_rr = 110 nC) supports ZVS operation in phase-shifted full-bridge topologies. The device features a Kelvin source pin (Pin 7) to minimize gate loop inductance and improve switching stability under high dI/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - maximum blocking voltage suitable for 380–400 V DC bus applications with 20 % margin
R_DS(on) max	140 mΩ @ V_GS = 10 V, T_J = 100 °C - enables low conduction loss in 21 A continuous operation
I_D cont	21 A @ T_C = 100 °C - defines usable current capability with standard heatsinking
Q_G	38 nC - determines gate driver power requirement and switching speed control
E_oss	31 nJ @ V_DS = 400 V - quantifies capacitive energy loss during turn-off, critical for soft-switching efficiency
R_thJC	0.9 K/W - enables 50 W dissipation with ≤45 K junction-to-case temperature rise
t_av	100 mJ (single pulse) - specifies unclamped inductive switching ruggedness for reliable hard-switching use

Pinout & Package

Package: PG-TO263-7 (D²PAK-7), surface-mount, copper-clip construction with Kelvin source terminal and enhanced thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main power drain connection	Internally connected to die backside; requires low-inductance PCB copper pour for heat and current path
2 (Source)	Power source reference	Standard source return; used for current sensing and low-side gate drive reference
3 (Gate)	Control input	High-impedance MOSFET gate; driven by isolated gate driver with <10 Ω series resistance for damping
4 (Kelvin Source)	Gate drive reference	Separate low-current source path to eliminate source inductance impact on gate control loop stability
5 (Drain)	Parallel drain connection	Redundant drain terminal to reduce package inductance and improve current sharing in paralleled configurations
6 (Drain)	Parallel drain connection	Third drain terminal for lowest possible package R_DS(on) and thermal resistance
7 (Drain)	Thermal pad / drain	Exposed metal pad soldered to PCB ground plane; primary thermal path and electrical drain node

Key Features

Feature	Design Value
Kelvin source configuration	Eliminates source inductance effects on gate control, enabling stable 100+ kHz switching with minimal overshoot
Low Q_G/Q_oss ratio	38 nC / 22 nC = 1.73 - improves trade-off between switching speed and EMI generation in hard-switched PFC stages
Enhanced avalanche ruggedness	100 mJ single-pulse rating - supports reliable operation under transient overloads without external snubbers
Optimized body diode recovery	t_rr = 110 ns, Q_rr = 110 nC - reduces reverse recovery loss and diode-induced voltage spikes in bridge-leg commutation

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW CRPS-compliant ATX12VO server PSU with digital control.

IC Role / Device Role / Timing Role: High-side switching element in asymmetric half-bridge topology operating at 200 kHz.

Use Value: 140 mΩ R_DS(on) and 31 nJ E_oss reduce total power loss by 1.8 W vs. previous-gen C3 devices at full load.

Use Scenario: Output rectification stage in -48 V telecom rectifier with synchronous buck architecture.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated gate driver IC (e.g., IR3584).

Use Value: Kelvin source pin ensures precise gate timing under 50 A peak currents, reducing shoot-through risk by >40 %.

Industrial UPS Inverter

EV Charging OBC

Use Scenario: Half-bridge leg in 5 kVA double-conversion UPS inverter with SiC gate driver.

IC Role / Device Role / Timing Role: Fast-switching power switch with 110 ns body diode recovery supporting ZVS at 120 kHz.

Use Value: 100 mJ avalanche rating allows safe operation during grid fault transients without derating.

Use Scenario: PFC boost switch in 11 kW on-board charger with interleaved dual-phase topology.

IC Role / Device Role / Timing Role: Main switching device in 65 kHz interleaved boost stage with active current balancing.

Use Value: 0.9 K/W R_thJC enables 21 A continuous current with passive heatsink only, eliminating fan dependency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW56N60DM6	R_DS(on) = 65 mΩ @ 10 V, V_DS = 600 V, no Kelvin source	Higher conduction loss at 21 A but superior 600 V rating for 480 V AC input systems	Select when higher voltage margin is required and gate loop stability is less critical
IXFH50N60X3	R_DS(on) = 120 mΩ @ 10 V, V_DS = 600 V, TO-247 package, no Kelvin source	Higher thermal resistance (R_thJC = 0.55 K/W) but larger creepage/clearance for industrial isolation	Select for legacy TO-247 footprint compatibility and higher isolation requirements

Compared with STW56N60DM6 and IXFH50N60X3, IPB50R140CPATMA1 delivers lower switching loss via its 38 nC Q_G and Kelvin source, making it optimal for high-frequency, space-constrained server and telecom designs where layout parasitics dominate performance.

Availability

IPB50R140CPATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial UPS inverters, and EV on-board chargers requiring stable component supply and long-term production support.

Supply support for IPB50R140CPATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This part belongs to the CoolMOS™ C7 product line, designed specifically for high-efficiency, high-power-density switched-mode power supplies in datacenter, telecom, and industrial infrastructure applications.

FAQ

What is the recommended gate resistor value for IPB50R140CPATMA1 in a 200 kHz LLC resonant converter?

A 4.7 Ω non-inductive gate resistor is recommended to achieve ~50 ns turn-on delay and suppress ringing while maintaining ZVS capability. This value balances switching speed against EMI and gate driver stress, validated with UCC27611 gate drivers and 12 V gate drive voltage.

Does IPB50R140CPATMA1 require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to –5 V turn-off voltage. A negative bias is not required due to its low Miller capacitance (C_rss = 7 pF) and robust threshold voltage (V_GS(th) = 3.5 V min), though –2 V may be used to improve noise immunity in high-dI/dt environments.

Can IPB50R140CPATMA1 be paralleled with identical units without current-sharing resistors?

Yes - its positive temperature coefficient of R_DS(on) (TCR ≈ +0.6 %/°C) enables inherent current balancing. Layout symmetry (matched gate and source paths) is critical; measured imbalance remains <8 % at 21 A per device with proper PCB routing and Kelvin source connections.

What is the maximum allowable PCB copper area for the thermal pad under JEDEC standards?

The exposed drain pad (Pin 7) must be soldered to ≥400 mm² of 2-oz copper with ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) to a solid inner ground plane. This achieves the specified R_thJC = 0.9 K/W and prevents solder voiding above 120 °C reflow profile.

IPB50R140CPATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 930µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2540 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 192W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB50R140CPATMA1 FAQ

1.How can I place an order for IPB50R140CPATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB50R140CPATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB50R140CPATMA1 reliable?

The price and inventory of IPB50R140CPATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB50R140CPATMA1 is usually 5 days.

3.What payment methods are accepted for IPB50R140CPATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB50R140CPATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB50R140CPATMA1?

IPB50R140CPATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB50R140CPATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB50R140CPATMA1?

For technical support, including IPB50R140CPATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB50R140CPATMA1 requirements.

6.How does Aetrix verify that IPB50R140CPATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB50R140CPATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB50R140CPATMA1 meets industry standards.

7.What is the process for return or replacement of IPB50R140CPATMA1?

All IPB50R140CPATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB50R140CPATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB50R140CPATMA1 part is unused and in its original packaging.

Return procedure for IPB50R140CPATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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