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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB50R299CPATMA1

Name: IPB50R299CPATMA1
Brand: Infineon Technologies
SKU: IPB50R299CPATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB50R299CPATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB50R299CPATMA1.pdf

Description:: MOSFET N-CH 550V 12A TO263-3

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Product details

Overview

IPB50R299CPATMA1 from Infineon Technologies is a 500 V, 13 A, 299 mΩ (typ.) N-channel CoolMOS™ C7 superjunction power MOSFET in PG-TO263-3 package, optimized for high-efficiency hard-switched and resonant SMPS topologies including LLC and PFC stages in server, telecom, and industrial power supplies.

For engineers reviewing the IPB50R299CPATMA1 datasheet, IPB50R299CPATMA1 pinout, IPB50R299CPATMA1 application, or IPB50R299CPATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 33 nC, E_oss of 42 nJ, t_rr of 100 ns, and qualified for 175 °C operation - all critical for ZVS/ZCS design validation and thermal margin analysis.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ charge-compensation cell structure with reduced specific on-resistance and optimized gate charge profile. Its low Q_g/Q_gd ratio and controlled dV/dt enable stable operation in high-frequency half-bridge and full-bridge converters up to 300 kHz.

The MOSFET features an integrated fast-recovery body diode with t_rr = 100 ns and Q_rr = 120 nC, supporting soft switching in LLC resonant converters and reducing turn-on losses during zero-voltage switching transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Maximum drain-source blocking voltage suitable for 400 V DC bus applications with 20 % safety margin.
R_DS(on) (typ.)	299 mΩ at V_GS = 10 V, T_j = 25 °C - Enables low conduction loss in 13 A continuous current designs with <1.7 W I²R loss at full load.
I_D (cont.)	13 A at T_c = 25 °C - Rated for sustained current delivery under heatsink-cooled conditions typical in 300–500 W power stages.
Q_g	33 nC - Low total gate charge reduces driver power requirement and enables efficient 200–300 kHz switching in digitally controlled PSUs.
E_oss	42 nJ at V_DS = 400 V - Low output capacitance energy minimizes turn-off loss and supports ZVS operation down to 100 kHz in LLC converters.
t_rr	100 ns - Fast body diode recovery time limits reverse recovery loss and prevents shoot-through risk in synchronous rectification and bridge configurations.
T_j max	175 °C - Extended junction temperature rating allows derated operation in compact, fanless enclosures without thermal throttling.

Pinout & Package

IPB50R299CPATMA1 is housed in PG-TO263-3 (D²PAK) surface-mount package with exposed drain pad for enhanced thermal dissipation. The package meets JEDEC standard MO-211 and supports solder-reflow assembly per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; requires low-inductance PCB routing to minimize ringing.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate; requires 10–15 V drive with series resistor (typically 5–22 Ω) to control dv/dt and suppress oscillation.
Pin 3 (Drain)	Power output (D)	High-voltage drain connection; electrically tied to exposed metal tab; must be isolated from heatsink unless using insulating pad.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure-of-merit	299 mΩ × 33 nC = 9.87 Ω·nC - Reduces combined conduction and switching loss by >15 % vs. prior-gen C3 devices in 200 kHz PFC stages.
Optimized body diode recovery	t_rr = 100 ns, Q_rr = 120 nC - Enables reliable ZVS in LLC half-bridge without external snubbers or diode clamping.
Enhanced avalanche ruggedness	E_AS = 230 mJ at T_j = 25 °C - Withstands single-pulse inductive switching stress in unregulated flyback or offline SMPS without failure.
Qualified for industrial temperature range	Guaranteed operation from –55 °C to +175 °C - Supports deployment in harsh environments including base station power modules and motor drive inverters.

Applications

Server PSU Primary Switch

Telecom Rectifier Module

Use Scenario: High-density 1U/2U AC-DC power supplies delivering 800–1200 W at >96 % efficiency.

IC Role / Device Role / Timing Role: Primary-side switching device in asymmetric half-bridge or LLC resonant converter operating at 200–300 kHz.

Use Value: Low E_oss and Q_g reduce switching loss by 0.8 W per device versus C3 equivalents, enabling higher power density without forced air cooling.

Use Scenario: -48 V telecom rectifier with active PFC front-end and isolated DC-DC stage.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC controller with 100 kHz switching frequency.

Use Value: 299 mΩ R_DS(on) limits conduction loss to <1.2 W at 13 A RMS, improving full-load efficiency by 0.3–0.5 % over 350 mΩ alternatives.

Industrial UPS Inverter Stage

EV Onboard Charger (OBC) PFC

Use Scenario: 3 kVA uninterruptible power supply with bidirectional DC-link and SiC-assisted hybrid inverter.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, driven by isolated gate driver with 15 V supply.

Use Value: 175 °C T_j rating allows 10 K higher ambient operation than standard 150 °C MOSFETs, extending field life in sealed cabinet installations.

Use Scenario: 6.6 kW single-phase OBC with two-stage architecture: boost PFC + dual-phase LLC DC-DC.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC with 65 kHz switching and phase-shifted control.

Use Value: Controlled dV/dt and low Q_gd/Q_g ratio prevent false triggering in high-noise automotive EMI environments, eliminating need for gate clamping circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55N6F7	R_DS(on) = 55 mΩ @ 10 V, V_DS = 600 V, Q_g = 52 nC - Higher conduction loss but wider voltage margin.	Better suited for 480 V AC-input systems requiring 600 V rating; less optimal for 400 V DC bus due to higher R_DS(on).	Select when system input voltage exceeds 450 V RMS or when legacy 600 V design reuse is required.
IXFH32N60X3	R_DS(on) = 220 mΩ @ 10 V, V_DS = 600 V, Q_g = 48 nC - Lower R_DS(on) but higher Q_g and no integrated fast diode.	Requires external anti-parallel diode for resonant topologies; higher gate drive loss limits usable frequency to ≤150 kHz.	Prefer for fixed-frequency hard-switched PFC where diode recovery is not critical and 600 V margin is mandatory.

Compared with STP55N6F7 and IXFH32N60X3, IPB50R299CPATMA1 delivers superior efficiency in 400 V DC bus applications due to its lower R_DS(on) × Q_g product and integrated fast-recovery body diode - making it optimal for high-frequency LLC and interleaved PFC where both conduction and switching losses dominate.

Availability

IPB50R299CPATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for IPB50R299CPATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This device belongs to the CoolMOS™ C7 family, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in datacenter, telecom, and industrial power systems operating at 100–300 kHz.

FAQ

What is the maximum recommended gate voltage for IPB50R299CPATMA1?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10 V as the nominal drive level for rated R_DS(on). Operation at 12–15 V improves switching speed and reduces Miller plateau time, while exceeding 16 V increases gate oxide stress and risks long-term reliability degradation under thermal cycling.

Does IPB50R299CPATMA1 require a gate resistor, and what value is recommended?

Yes - a series gate resistor is mandatory to dampen parasitic oscillations and control dV/dt. For 200 kHz LLC operation with 15 V drive, a 10 Ω non-inductive resistor is recommended; for 100 kHz PFC, 15–22 Ω provides optimal trade-off between switching loss and EMI suppression.

Can IPB50R299CPATMA1 replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes, with layout verification: its lower R_DS(on) and Q_g reduce losses, but faster switching increases EMI sensitivity. Gate drive strength must be verified, and PCB trace inductance minimized. Thermal interface must accommodate identical D²PAK footprint but may require updated heatsink derating due to higher power density.

Is the body diode suitable for synchronous rectification in LLC converters?

No - the body diode is optimized for low Q_rr and soft recovery in primary-side switching, not for reverse conduction. For secondary-side synchronous rectification, discrete Schottky or GaN FETs are required; this device is intended only for high-side or low-side primary switching roles.

IPB50R299CPATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 299mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1190 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB50R299CPATMA1 FAQ

1.How can I place an order for IPB50R299CPATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB50R299CPATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB50R299CPATMA1 reliable?

The price and inventory of IPB50R299CPATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB50R299CPATMA1 is usually 5 days.

3.What payment methods are accepted for IPB50R299CPATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB50R299CPATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB50R299CPATMA1?

IPB50R299CPATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB50R299CPATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB50R299CPATMA1?

For technical support, including IPB50R299CPATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB50R299CPATMA1 requirements.

6.How does Aetrix verify that IPB50R299CPATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB50R299CPATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB50R299CPATMA1 meets industry standards.

7.What is the process for return or replacement of IPB50R299CPATMA1?

All IPB50R299CPATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB50R299CPATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB50R299CPATMA1 part is unused and in its original packaging.

Return procedure for IPB50R299CPATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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