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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R060C7ATMA1

Name: IPB60R060C7ATMA1
Brand: Infineon Technologies
SKU: IPB60R060C7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB60R060C7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R060C7ATMA1.pdf

Description:: MOSFET N-CH 600V 35A TO263-3

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Product details

Overview

IPB60R060C7ATMA1 from Infineon Technologies is a 600V superjunction N-channel power MOSFET in D²PAK (TO-263) package, featuring 60 mΩ max R_DS(on), 135 A pulsed drain current, and 8.1 µJ E_oss at 400 V. It serves as a high-efficiency primary-side switch in hard- and soft-switching SMPS topologies including PFC and LLC resonant converters for server, telecom, and solar inverters.

For engineers reviewing the IPB60R060C7ATMA1 datasheet, IPB60R060C7ATMA1 pinout, IPB60R060C7ATMA1 application, or IPB60R060C7ATMA1 equivalent, key selection criteria include dv/dt ruggedness (120 V/ns), body diode di/dt capability (420 A/µs), R_DS(on) × E_oss figure-of-merit, thermal resistance (0.772 °C/W j-c), and JEDEC industrial-grade qualification.

Technical Context

This CoolMOS™ C7 device implements a charge-compensated superjunction structure enabling ultra-low R_DS(on) × area (below 1 Ω·mm²) while maintaining robust 650 V blocking capability. Its gate threshold voltage (3–4 V) and plateau voltage (~5 V) support standard 12–15 V gate drivers without level-shifting.

The MOSFET delivers low dynamic losses via optimized Q_g (68 nC typ) and Q_gd (23 nC typ), enabling high-frequency operation up to several hundred kHz in LLC and active clamp forward converters. Its body diode exhibits fast reverse recovery (t_rr = 390 ns, Q_rr = 6 µC) with controlled di/dt (420 A/µs), reducing snubbing requirements in synchronous rectification stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with 30% margin for transient overvoltage in industrial/server PFC stages
R_DS(on) max	60 mΩ @ T_j = 150°C - enables <54 A continuous conduction at 150°C junction temperature in thermally constrained layouts
E_oss	8.1 µJ @ 400 V - reduces turn-on switching loss in high-frequency LLC and ZVS-PWM topologies
Q_g typ	68 nC - allows efficient drive with standard gate drivers (e.g., 1EDN7512B) without excessive Miller-induced oscillation risk
dv/dt ruggedness	120 V/ns - withstands fast voltage transients during hard switching, eliminating need for external dv/dt snubbers in many PFC designs
Body diode di/dt	420 A/µs - supports high-speed commutation in half-bridge and phase-shifted full-bridge configurations without parasitic turn-on
T_j max	150 °C - qualified per JEDEC JESD22-A108 for industrial-grade reliability under sustained thermal stress

Pinout & Package

IPB60R060C7ATMA1 uses the surface-mount D²PAK (PG-TO263-3) package with exposed drain tab for enhanced thermal dissipation. The drain connects directly to the copper tab on the underside of the package, requiring proper PCB thermal pad design (≥6 cm² copper area recommended).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives gate drive signal; requires low-inductance routing and local 100 nF decoupling to suppress ringing during fast dv/dt transitions
Pin 2 (Drain) + Tab	High-voltage power terminal	Internally connected to the MOSFET's drain region and exposed metal tab; must be soldered to large copper pour for thermal and electrical integrity
Pin 3 (Source)	Reference node / return path	Serves as source reference for gate drive and current sensing; layout must minimize inductance between source pin and driver ground

Key Features

Feature	Design Value
Superjunction architecture	Enables 60 mΩ R_DS(on) at 600 V rating - achieves highest power density among industrial-grade 600 V MOSFETs in D²PAK
Low R_DS(on) × E_oss FOM	Reduces total switching loss by >25% vs. prior-generation CoolMOS™ C6 in 100–300 kHz LLC operation
120 V/ns dv/dt ruggedness	Eliminates need for external gate resistors or RC snubbers in high-dV/dt PFC boost stages operating near 400 V DC bus
JEDEC industrial qualification	Validated per J-STD-020 (MSL1 reflow) and JESD22-A108 - ensures long-term reliability in uncontrolled ambient environments (−40 to +125 °C ambient)
Optimized body diode	420 A/µs di/dt rating and 390 ns t_rr enable zero-voltage switching in asymmetric half-bridge topologies without external freewheeling diodes

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.5 kW front-end PFC stage with interleaved boost topology.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus and 50 A RMS input current.

Use Value: 60 mΩ R_DS(on) and 8.1 µJ E_oss reduce conduction and switching losses, enabling >98% efficiency at full load.

Use Scenario: Active clamp forward converter primary switch in 48 V telecom rectifier with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Main power switch subjected to repetitive 600 V voltage spikes during clamp cycle.

Use Value: 120 V/ns dv/dt ruggedness prevents false turn-on during clamp transitions, improving system stability.

Solar Inverter DC-DC Stage

Industrial UPS Inverter

Use Scenario: High-side switch in dual-phase LLC resonant DC-DC converter stepping down 1000 V PV string voltage to 400 V intermediate bus.

IC Role / Device Role / Timing Role: Resonant mode switching device operating at variable frequency (150–500 kHz) with ZVS turn-on.

Use Value: Low Q_gd/Q_g ratio (23/68 nC) ensures precise ZVS boundary control and minimal dead-time sensitivity.

Use Scenario: Half-bridge leg switch in 10 kVA online UPS inverter delivering 230 V AC output from 700 V DC bus.

IC Role / Device Role / Timing Role: Hard-switched power transistor enduring repetitive 650 V blocking and 135 A peak current pulses.

Use Value: 150 °C T_j rating and 0.772 °C/W R_thJC allow reliable operation under sustained overload conditions without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW60N60DM6	600 V, 0.055 Ω R_DS(on), 105 nC Q_g, TO-247 package	Higher gate charge increases driver loss; through-hole mounting limits board-level power density	Preferred where mechanical robustness and heatsink mounting outweigh surface-mount density needs
IXFH60N60X3	600 V, 0.058 Ω R_DS(on), 92 nC Q_g, TO-247 package, no integrated body diode optimization	Lacks dv/dt ruggedness spec (rated only to 50 V/ns); requires external snubber in high-dV/dt PFC	Selected when cost sensitivity dominates and lower-frequency (<100 kHz) hard-switching is used

Compared with STW60N60DM6 and IXFH60N60X3, IPB60R060C7ATMA1 offers superior power density via D²PAK packaging, best-in-class R_DS(on) × E_oss, and verified 120 V/ns dv/dt immunity-making it optimal for compact, high-frequency, high-reliability server and telecom power supplies.

Availability

IPB60R060C7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IPB60R060C7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ C7 product line was engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy systems-emphasizing low-loss switching, ruggedness, and industrial reliability.

FAQ

What is the maximum continuous drain current for IPB60R060C7ATMA1 at 100°C case temperature?

The maximum continuous drain current is 22 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating accounts for thermal limitations of the D²PAK package and internal silicon heating under steady-state conduction, assuming adequate PCB copper area and ambient airflow.

Does IPB60R060C7ATMA1 require a gate resistor for safe operation in a 300 kHz LLC resonant converter?

A gate resistor (typically 5–10 Ω) is recommended to dampen gate-source ringing caused by PCB inductance and the MOSFET's 0.8 Ω intrinsic gate resistance. While not strictly required for functionality, omitting it risks spurious turn-on due to high dv/dt coupling, especially in high-side configurations with shared source paths.

Can IPB60R060C7ATMA1 be paralleled with identical units in a 5 kW PFC design?

Yes-parallel operation is supported per Infineon's application note AN2015-04, but requires individual ferrite beads (600 Ω @ 100 MHz) on each gate trace and matched gate loop inductance. Thermal symmetry across devices must be ensured via symmetrical PCB copper pours and identical mounting pressure on the drain tabs.

Is the drain tab of IPB60R060C7ATMA1 electrically isolated from the PCB substrate?

No-the drain tab is internally connected to Pin 2 (Drain) and is not insulated. It must be soldered directly to a non-isolated, high-current copper plane on the PCB. Electrical isolation requires an insulating thermal interface material (e.g., ceramic washer or silicone pad) and careful clearance design per IPC-2221B for 650 V working voltage.

IPB60R060C7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 15.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 800µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2850 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 162W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (TO-263)

IPB60R060C7ATMA1 FAQ

1.How can I place an order for IPB60R060C7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R060C7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R060C7ATMA1 reliable?

The price and inventory of IPB60R060C7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R060C7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R060C7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R060C7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R060C7ATMA1?

IPB60R060C7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R060C7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R060C7ATMA1?

For technical support, including IPB60R060C7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R060C7ATMA1 requirements.

6.How does Aetrix verify that IPB60R060C7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R060C7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R060C7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R060C7ATMA1?

All IPB60R060C7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R060C7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R060C7ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R060C7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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