Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R070CFD7ATMA1

Name: IPB60R070CFD7ATMA1
Brand: Infineon Technologies
SKU: IPB60R070CFD7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB60R070CFD7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R070CFD7ATMA1.pdf

Description:: MOSFET N-CH 600V 31A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,827

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB60R070CFD7ATMA1 from Infineon Technologies is a 600 V, 70 mΩ ultra-low-R_DS(on) superjunction MOSFET in D²PAK (TO-263-3) package, featuring 67 nC gate charge, 1300 A/µs diF/dt ruggedness, and optimized fast-body-diode performance for soft-switching resonant topologies including phase-shift full-bridge and LLC converters in server, telecom, and EV charging power supplies.

For engineers reviewing the IPB60R070CFD7ATMA1 datasheet, IPB60R070CFD7ATMA1 pinout, IPB60R070CFD7ATMA1 application, or IPB60R070CFD7ATMA1 equivalent, this CoolMOS™ CFD7 device delivers best-in-class Q_rr (0.57–1.14 µC), low E_oss (7.7 µJ @ 400 V), and high hard-commutation robustness-critical for ZVS design validation, thermal derating analysis, and parallel-MOSFET layout with ferrite-bead gate control.

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture, engineered specifically for zero-voltage switching (ZVS) operation. Its reduced Q_g, ultra-low Q_rr, and enhanced dv/dt (70 V/ns reverse diode, 120 V/ns MOSFET) enable stable commutation under high diF/dt stress up to 1300 A/µs without oscillation or failure.

The device integrates a fast intrinsic body diode with 124–186 ns t_rr and 7.8 A I_rrm, eliminating need for external SiC/Schottky co-packaging in resonant half/full-bridge stages. Its R_DS(on) remains stable across T_j = −55 °C to 150 °C, supporting industrial-grade thermal cycling in high-power-density SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage enabling use in 400 V DC bus systems with 25 % margin for transient overvoltage
R_DS(on), max	70 mΩ @ T_j = 150 °C - Enables <31 A continuous conduction at 100 °C case temperature with ≤2.2 W conduction loss
Q_g, typ	67 nC - Reduces gate drive power and enables efficient operation with standard 1–2 A peak gate drivers
Q_rr, typ	0.57 µC - Minimizes turn-on switching loss and EMI in LLC primary-side synchronous rectification
E_oss @ 400 V	7.7 µJ - Low output capacitance energy reduces dead-time losses and improves ZVS initiation reliability
diF/dt ruggedness	1300 A/µs - Supports hard commutation in asymmetric half-bridge and bidirectional DC–DC without snubbers
T_j max	150 °C - Fully qualified per JEDEC JESD47 for industrial applications with extended lifetime at elevated junction temperatures

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated drain tab for direct heatsink mounting. Thermal resistance R_thJC = 0.8 °C/W.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	High-impedance MOSFET gate requiring <5.3 Ω series resistance to damp ringing during fast switching
Pin 2 (Drain) + Tab	High-voltage power terminal	Electrically connected drain and thermally conductive copper tab-must be soldered to PCB copper pour or heatsink for thermal management
Pin 3 (Source)	Power return / reference node	Low-inductance source connection critical for gate loop integrity; serves as local ground reference for driver IC

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 124–186 ns with low Q_rr enables reliable self-commutation in resonant topologies without external diodes
Low R_DS(on) × Q_g FOM	4.7 mΩ·nC - Highest figure-of-merit among 600 V SMD MOSFETs, balancing conduction and switching loss
Reverse diode dv/dt ruggedness	70 V/ns - Prevents false turn-on during high-speed voltage transitions in high-side configurations
Hard commutation robustness	Validated to 1300 A/µs diF/dt - Eliminates need for gate clamping or active snubbing in bidirectional converters
JEDEC industrial qualification	Qualified per JESD47 - Ensures long-term reliability in 24/7 server PSU and telecom rectifier environments

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW phase-shift full-bridge (PSFB) converter operating at 100–300 kHz with ZVS.

IC Role / Device Role / Timing Role: High-voltage switching transistor handling 400 V DC bus, delivering 30 A RMS current with <1.5% conduction loss.

Use Value: 0.57 µC Q_rr ensures clean ZVS turn-on across load range, reducing EMI and improving efficiency by 0.8% vs. CFD2 generation.

Use Scenario: LLC resonant converter primary switch in 2.5 kW telecom rectifier with wide input (−48 V to −60 V battery backup).

IC Role / Device Role / Timing Role: Fast-switching power MOSFET managing 400 V bus with 129 A pulsed drain current capability.

Use Value: 1300 A/µs diF/dt rating supports unidirectional/bidirectional operation during battery-assisted hold-up without diode failure.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: PFC + DC–DC stage in 11 kW OBC using interleaved totem-pole PFC and dual-phase LLC.

IC Role / Device Role / Timing Role: High-efficiency switching element in LLC half-bridge with 600 V blocking and 70 mΩ on-resistance.

Use Value: 7.7 µJ E_oss enables reliable ZVS down to 20% load, extending light-load efficiency above 96.5%.

Use Scenario: Output inverter bridge in 5 kVA industrial UPS with 400 V DC link and 50/60 Hz sinusoidal output.

IC Role / Device Role / Timing Role: Robust power switch rated for 150 °C junction operation and 151 mJ single-pulse avalanche energy.

Use Value: JEDEC industrial qualification and 150 °C T_j max ensure >10-year field life under continuous thermal cycling in factory-floor environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency 600 V resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R070CFD7	TO-247-3 through-hole package; identical R_DS(on), Q_g, Q_rr, and CFD7 die	Higher thermal mass and R_thJC = 0.45 °C/W-suited for higher-power discrete heatsink mounting	Select when board space allows TO-247 and thermal budget exceeds 200 W dissipation
IPP60R070CFD7	TO-220FP package; same die but lower P_tot = 73 W and R_thJC = 2.1 °C/W	Limited to <15 A continuous; not recommended for >1 kW ZVS topologies due to thermal bottleneck	Choose only for cost-sensitive, lower-power (<800 W) industrial SMPS where SMT assembly is not required

Compared with IPW60R070CFD7 and IPP60R070CFD7, the IPB60R070CFD7ATMA1 provides optimal power density for SMT-based high-frequency resonant converters-offering 0.8 °C/W thermal resistance and full 156 W power dissipation while maintaining identical electrical performance and JEDEC industrial qualification.

Availability

IPB60R070CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and high-volume SMT manufacturability.

Supply support for IPB60R070CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in high-voltage silicon and SiC power devices.

This part belongs to the CoolMOS™ CFD7 product line-designed explicitly for soft-switching resonant topologies such as phase-shift full-bridge and LLC converters, targeting highest efficiency, power density, and ruggedness in industrial and infrastructure power systems.

FAQ

What is the maximum continuous drain current for IPB60R070CFD7ATMA1 at 100 °C case temperature?

The maximum continuous drain current is 20 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating accounts for thermal derating from the 31 A value at 25 °C case temperature and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load conditions.

Does IPB60R070CFD7ATMA1 require a gate resistor for stability in ZVS applications?

Yes-Infineon recommends a gate resistor of 5.3 Ω (as used in dynamic characterization) to control dV/dt and suppress oscillation during fast switching. For paralleling, ferrite beads on individual gate lines or separate totem-pole drivers are advised to prevent current imbalance and gate ringing.

Can IPB60R070CFD7ATMA1 replace older CoolMOS™ CFD2 devices in existing designs?

Yes-this device is a direct drop-in replacement for IPB60R099CFD2 and similar CFD2 parts in the same D²PAK package, offering improved Q_rr (−45 %), lower E_oss (−30 %), and enhanced diF/dt ruggedness (1300 A/µs vs. 800 A/µs), enabling immediate efficiency gains without layout changes.

What is the safe operating area (SOA) limitation at 100 V V_DS and 25 °C case temperature?

At V_DS = 100 V and T_C = 25 °C, the SOA supports continuous ID up to 100 A (per Diagram 2), limited by package thermal capacity-not die current density. Pulse operation allows up to 129 A for durations ≤100 µs, provided peak junction temperature remains below 150 °C.

IPB60R070CFD7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 15.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 760µA

Gate Charge (Qg) (Max) @ Vgs:: 67 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2721 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB60R070CFD7ATMA1 FAQ

1.How can I place an order for IPB60R070CFD7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R070CFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R070CFD7ATMA1 reliable?

The price and inventory of IPB60R070CFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R070CFD7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R070CFD7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R070CFD7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R070CFD7ATMA1?

IPB60R070CFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R070CFD7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R070CFD7ATMA1?

For technical support, including IPB60R070CFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R070CFD7ATMA1 requirements.

6.How does Aetrix verify that IPB60R070CFD7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R070CFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R070CFD7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R070CFD7ATMA1?

All IPB60R070CFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R070CFD7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R070CFD7ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R070CFD7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …