Infineon Technologies IPB60R080P7ATMA1

Overview

IPB60R080P7ATMA1 from Infineon Technologies is a 600 V, 80 mΩ superjunction N-channel power MOSFET in D²PAK (PG-TO263-3) package, optimized for hard/soft-switching PFC and LLC resonant converters. It delivers 110 A pulsed drain current, 51 nC total gate charge, and 900 A/µs body diode commutation speed, enabling high-efficiency, compact 65–300 W server PSUs and telecom rectifiers.

For engineers reviewing the IPB60R080P7ATMA1 datasheet, IPB60R080P7ATMA1 pinout, IPB60R080P7ATMA1 application, or IPB60R080P7ATMA1 equivalent, key selection criteria include R_DS(on) temperature stability, ESD robustness (>2 kV HBM), dv/dt ruggedness (80 V/ns), and body diode diF/dt rating - all critical for reliable operation in high-frequency, high-voltage AC-DC front-end stages.

Technical Context

This CoolMOS™ P7 device implements a refined superjunction cell structure with reduced specific on-resistance (R_DS(on)·A < 1 Ω·mm²) and optimized charge distribution, yielding lower E_oss (5.5 µJ at 400 V) and Q_gd/Q_g ratio (16/51 nC) than prior P6 generation. Its gate plateau voltage of 5.2 V ensures stable turn-on under wide V_GS variation.

The MOSFET features a robust body diode with 263 ns reverse recovery time and 2.9 µC Q_rr, validated for hard commutation up to 900 A/µs. Thermal resistance R_thJC is 0.97 °C/W, supporting high-power density designs when mounted on PCBs with ≥6 cm² copper area for drain cooling.

Key Specifications

Pinout & Package

Package: PG-TO263-3 (D²PAK) with exposed drain tab for thermal and electrical connection. Standard surface-mount footprint compatible with JEDEC MS-012AC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STW62N60M2 and IPP60R099P7, IPB60R080P7ATMA1 offers optimal balance of low R_DS(on), moderate Q_g, and industry-leading diF/dt ruggedness - making it the preferred choice for high-frequency, high-reliability PFC and resonant converters where both efficiency and robustness are non-negotiable.

Availability

IPB60R080P7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IPB60R080P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon-based high-voltage power devices.

The CoolMOS™ P7 series targets high-efficiency AC-DC conversion in datacenter, telecom, and industrial power supplies, emphasizing reduced switching loss, enhanced body diode ruggedness, and simplified system design over prior generations.

FAQ

What is the maximum continuous drain current for IPB60R080P7ATMA1 at 100°C case temperature?

The maximum continuous drain current is 23 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating is thermally limited by junction temperature (T_j ≤ 150°C) and assumes proper PCB copper area (≥6 cm²) for drain cooling. At T_C = 25°C, the rating increases to 37 A.

Does IPB60R080P7ATMA1 require a gate resistor for stable operation in LLC resonant converters?

Yes - a gate resistor (typically 3.3–10 Ω) is required to dampen ringing and control dV/dt during switching transitions. The device's internal gate resistance is 4.8 Ω, but external series resistance is necessary to match driver strength and layout parasitics, especially above 300 kHz. Ferrite beads are recommended for paralleled configurations.

How does the body diode performance compare to standard silicon MOSFETs in hard-switching PFC?

Its body diode achieves 900 A/µs diF/dt and 263 ns t_rr, significantly exceeding standard SJ-MOSFETs (typically ≤400 A/µs). This enables reliable operation in discontinuous-conduction-mode (DCM) and transition-mode (TM) PFC without external diodes, verified under hard commutation stress per JEDEC JESD24-11 test conditions.

Is IPB60R080P7ATMA1 suitable for use in parallel configurations?

Yes - but requires careful layout: individual gate resistors (or ferrite beads) per device, matched trace lengths, and symmetrical current paths. The datasheet explicitly recommends separate totem-pole drivers or gate ferrites to prevent oscillation and current imbalance, particularly above 20 A total RMS current.