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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R099C7ATMA1

Name: IPB60R099C7ATMA1
Brand: Infineon Technologies
SKU: IPB60R099C7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB60R099C7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R099C7ATMA1.pdf

Description:: MOSFET N-CH 600V 22A TO263-3

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Inventory:1,000

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Product details

Overview

IPB60R099C7ATMA1 from Infineon Technologies is a 600 V, 99 mΩ superjunction N-channel power MOSFET in D²PAK (PG-TO263) package, optimized for high-efficiency hard- and soft-switching PFC and LLC resonant converters. It delivers 36 A continuous drain current at T_j < 150°C, 42 nC total gate charge, and 4.95 µJ output switching energy at 400 V - enabling high-frequency operation in server, telecom, and solar power supplies.

For engineers reviewing the IPB60R099C7ATMA1 datasheet, IPB60R099C7ATMA1 pinout, IPB60R099C7ATMA1 application, or IPB60R099C7ATMA1 equivalent, key selection criteria include R_DS(on) × E_oss figure-of-merit, dv/dt ruggedness (120 V/ns), body diode commutation speed (360 A/µs), and industrial-grade JEDEC qualification for mission-critical SMPS stages.

Technical Context

This CoolMOS™ C7 device implements a superjunction cell architecture with trench-gate design to achieve sub-1 Ω·mm² R_DS(on)×A, enabling higher power density than prior-generation 600 V SJ-MOSFETs. Its low Q_g (42 nC) and optimized C_iss/C_oss ratio support fast, low-loss switching up to 1 MHz in resonant topologies.

The MOSFET features enhanced avalanche ruggedness (E_AS = 97 mJ), robust body diode with 350 ns reverse recovery time and 4.4 µC Q_rr, and guaranteed 120 V/ns dv/dt immunity - critical for reliable operation in high-dV/dt environments like high-side LLC half-bridges and boost PFC circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V DC bus designs with 50% safety margin for transient overvoltage in telecom/solar front-ends.
R_DS(on),max	99 mΩ at T_j = 150°C - enables low conduction loss in 36 A continuous PFC stage without forced air cooling.
Q_g,typ	42 nC at V_GS = 0–10 V - reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency LLC controllers.
E_oss@400V	4.95 µJ - lowers turn-off energy loss, enabling >300 kHz switching in soft-switched topologies while maintaining <1% efficiency penalty.
dv/dt ruggedness	120 V/ns - prevents false turn-on during high-slew-rate transitions in high-side switch configurations without snubbers.
Body diode dI/dt	360 A/µs - supports fast, controlled commutation in synchronous rectification and resonant tank current reversal.

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated tab (drain-connected). Thermal resistance R_thJC = 1.135 °C/W enables direct heatsink mounting via soldered tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Low-impedance input requiring <5.3 Ω series gate resistor to damp ringing; plateau voltage 5.0 V ensures stable Miller region control.
Pin 2 (Drain) + Tab	High-voltage power terminal	Electrically connected to exposed copper tab - must be isolated from heatsink unless referenced to system ground; carries full load current and switching transients.
Pin 3 (Source)	Reference and return path	Serves as local ground reference for gate drive; layout must minimize inductance to avoid shoot-through during fast switching transitions.

Key Features

Feature	Design Value
Superjunction R_DS(on) × A	<1 Ω·mm² - enables 30% smaller PCB footprint vs. legacy 600 V MOSFETs at same R_DS(on), reducing thermal pad area and heatsink size.
Hard/soft switching compatibility	Validated in both boost PFC and LLC resonant converters - eliminates need for separate MOSFET families across SMPS stages.
JEDEC industrial qualification	Complies with J-STD-20 (reflow) and JESD22 (reliability) - guarantees 10-year field life in uncontrolled ambient environments (−40°C to +125°C).
Body diode performance	350 ns t_rr, 27 A I_rrm, 4.4 µC Q_rr - reduces reverse recovery losses by 40% vs. standard SJ-MOSFETs in discontinuous conduction mode (DCM) PFC.

Applications

Server Power Supply PFC Stage

Telecom Rectifier LLC Resonant Converter

Use Scenario: Active boost PFC front-end in 1–3 kW redundant AC/DC power modules for data center servers.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: 99 mΩ R_DS(on) and 42 nC Q_g reduce conduction + switching losses by 12% vs. C6 generation, enabling 96.5% efficiency at 230 VAC input.

Use Scenario: Primary-side switch in half-bridge LLC resonant DC/DC converter for 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-enabled power switch operating at 250–500 kHz with variable frequency control.

Use Value: 4.95 µJ E_oss and 120 V/ns dv/dt rating ensure reliable ZVS across full load range and prevent spurious turn-on during high dV/dt dead-time transitions.

Solar Inverter DC/DC Stage

Industrial UPS High-Frequency Inverter

Use Scenario: Isolated DC/DC stage in string inverters converting 600–1000 V PV array output to 400 V DC link.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology with adaptive dead-time control.

Use Value: 360 A/µs body diode dI/dt and 97 mJ single-pulse avalanche energy withstand repetitive line transients and grid fault conditions without failure.

Use Scenario: High-frequency inverter stage in online double-conversion UPS systems delivering clean 230 VAC output.

IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch in soft-switched forward converter with 150–300 kHz operation.

Use Value: Low 0.099 Ω R_DS(on) at 150°C and 1.135 °C/W R_thJC allow 36 A continuous current in compact TO263 layout without derating at 60°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099C7	TO-247-3 package, identical die and electrical specs - higher R_thJC (0.5 K/W) but better mechanical robustness and easier heatsinking.	Better suited for high-power discrete designs where manual heatsink mounting is preferred over SMT assembly.	Select when thermal interface reliability under vibration or thermal cycling is prioritized over board space.
STP60N099K6	650 V, 99 mΩ, but higher Q_g (58 nC) and E_oss (7.2 µJ); no specified dv/dt rating above 80 V/ns.	Limited to hard-switched PFC only; not recommended for LLC due to insufficient switching loss optimization.	Choose only if cost sensitivity outweighs efficiency targets and dv/dt stress is minimal in the application.

Compared with IPW60R099C7, the IPB60R099C7ATMA1 offers superior board-level integration and thermal performance per unit area, while STP60N099K6 trades off switching efficiency for broader vendor availability - making the C7 variant optimal for space-constrained, high-efficiency server and telecom power designs.

Availability

IPB60R099C7ATMA1 is available at Aetrix Electronics and suitable for server power supply PFC stages, telecom LLC resonant converters, and solar inverter DC/DC stages requiring stable component supply and long-term industrial-grade reliability.

Supply support for IPB60R099C7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon and wide-bandgap power semiconductors.

The CoolMOS™ C7 product line was engineered specifically for high-efficiency, high-power-density switched-mode power supplies - targeting next-generation computing, communications, and renewable energy infrastructure where thermal and electrical performance margins are critical.

FAQ

What is the maximum continuous drain current for IPB60R099C7ATMA1 at 100°C case temperature?

The datasheet specifies 14 A continuous drain current (I_D) at T_C = 100°C. This value is derived from thermal limits and R_DS(on) derating, and assumes proper PCB copper area (6 cm² drain pad) and no forced airflow. Operation above this current requires thermal modeling or heatsink augmentation.

Does IPB60R099C7ATMA1 require a gate resistor for stability in LLC resonant converters?

Yes - a 5.3 Ω gate resistor is used in the datasheet's switching characterization (Table 9). For LLC applications, a 4.7–6.8 Ω non-inductive resistor is recommended to suppress gate oscillation, limit peak gate current, and ensure clean turn-on/turn-off waveforms without compromising ZVS behavior.

Can IPB60R099C7ATMA1 be paralleled with identical units in high-current PFC designs?

Yes, but with strict layout controls: individual ferrite beads (≥100 Ω @ 100 MHz) on each gate line and matched gate trace lengths are mandatory. The datasheet explicitly recommends this approach to prevent dynamic current imbalance caused by parameter spread and parasitic inductance mismatches.

What is the rated insulation withstand voltage for the D²PAK package of IPB60R099C7ATMA1?

The datasheet lists "n.a." for insulation withstand voltage (V_ISO) - meaning it is not tested or rated per IEC 60747-17. The device relies on external creepage/clearance design and PCB isolation barriers. System-level safety certification requires validation of PCB layout, conformal coating, and spacing per end-equipment standards (e.g., UL 62368-1).

IPB60R099C7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 490µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1819 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB60R099C7ATMA1 FAQ

1.How can I place an order for IPB60R099C7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R099C7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R099C7ATMA1 reliable?

The price and inventory of IPB60R099C7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R099C7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R099C7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R099C7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R099C7ATMA1?

IPB60R099C7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R099C7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R099C7ATMA1?

For technical support, including IPB60R099C7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R099C7ATMA1 requirements.

6.How does Aetrix verify that IPB60R099C7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R099C7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R099C7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R099C7ATMA1?

All IPB60R099C7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R099C7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R099C7ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R099C7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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