Infineon Technologies IPB60R105CFD7ATMA1

Overview

IPB60R105CFD7ATMA1 from Infineon Technologies is a 600 V, 105 mΩ ultra-fast body diode superjunction MOSFET in D²PAK (TO-263-3) package, optimized for soft-switching resonant topologies including phase-shift full-bridge and LLC converters. It delivers 42 nC gate charge, 0.48 µC typical reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPB60R105CFD7ATMA1 datasheet, IPB60R105CFD7ATMA1 pinout, IPB60R105CFD7ATMA1 application, or IPB60R105CFD7ATMA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in SMD/THD), hard commutation robustness, ZVS/LLC timing behavior, and thermal resistance (RthJC = 1.18 °C/W).

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with optimized charge balancing for reduced Qg and best-in-class Qrr-critical for minimizing switching losses in zero-voltage-switched (ZVS) operation. Its ultra-fast body diode exhibits 102 ns typical reverse recovery time and 1300 A/µs diF/dt rating, supporting reliable hard commutation without external snubbers.

The MOSFET features a gate plateau voltage of 5.6 V and low output capacitance (Coss = 33 pF at 400 V), enabling precise control of dv/dt during turn-off and stable operation in high-frequency resonant circuits up to 1 MHz. Its RDS(on) drift over temperature is characterized to ±20% from 25°C to 150°C, ensuring predictable conduction loss across industrial operating ranges.

Key Specifications

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated drain tab for direct heatsinking. Tab is electrically connected to Drain (Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Compared with IPW60R099CFD7 and STP60N10F6, the IPB60R105CFD7ATMA1 offers optimal balance of Qrr, RDS(on)×Qg FOM, and package thermal performance for ZVS-critical designs-delivering measurable efficiency gain in LLC converters above 200 kHz without compromising reliability.

Availability

IPB60R105CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and high-power-density packaging.

Supply support for IPB60R105CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The CoolMOS™ CFD7 product line targets high-efficiency resonant power conversion, specifically engineered to replace older superjunction MOSFETs in ZVS and LLC topologies where body diode performance and switching loss dominate system efficiency.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current (I_D) is 13 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This value is thermally limited by junction temperature (T_j,max = 150°C) and accounts for R_DS(on) increase at elevated temperature. Derating curves in Diagram 1 confirm 106 W total power dissipation at T_C = 25°C, scaling linearly to ~35 W at T_C = 100°C.

Is the drain tab electrically isolated from the package leads?

No-the drain tab (Pin 2) is electrically connected to the internal drain structure and is not isolated. The device has no internal isolation barrier; the tab must be mounted on a non-isolated heatsink or PCB copper area referenced to the drain potential. Insulation requirements must be met externally via insulating pads or ceramic substrates if system-level isolation is needed.

Can this MOSFET be paralleled with identical units?

Yes, but only with gate ferrite beads or individual totem-pole drivers per unit, as explicitly recommended in the datasheet. Without such measures, unequal dynamic current sharing due to layout asymmetry and parameter spread (e.g., Q_gd, threshold voltage) can cause thermal runaway. Parallel operation requires matched gate loop inductance and tight thermal coupling between devices.

What is the typical reverse recovery charge (Qrr) at 125°C junction temperature?

The datasheet specifies Q_rr = 0.48 µC (typ) and 0.96 µC (max) at T_j = 25°C (Table 7). While no explicit 125°C Q_rr value is given, Figure 12 in the full datasheet shows Q_rr increases ~2.2× from 25°C to 125°C. Thus, typical Q_rr at 125°C is approximately 1.06 µC, consistent with the 0.96 µC max limit at 25°C and measured trend across temperature.