Infineon Technologies IPB60R120P7ATMA1

Overview

IPB60R120P7ATMA1 from Infineon Technologies is a 600 V, 120 mΩ superjunction N-channel power MOSFET in the CoolMOS™ P7 generation, designed for high-efficiency hard- and soft-switching applications including PFC and LLC resonant converters. It delivers 78 A pulsed drain current, 36 nC total gate charge, and 900 A/µs body diode commutation speed, enabling compact, thermally efficient designs in server PSUs and telecom rectifiers.

For engineers reviewing the IPB60R120P7ATMA1 datasheet, IPB60R120P7ATMA1 pinout, IPB60R120P7ATMA1 application, or IPB60R120P7ATMA1 equivalent, key selection criteria include its 1.31 °C/W junction-to-case thermal resistance, low 4.0 µJ Eoss at 400 V, robust 82 mJ single-pulse avalanche energy, and JEDEC-qualified industrial reliability - all critical for high-density, high-reliability AC-DC power stages.

Technical Context

This device implements Infineon's 7th-generation superjunction architecture with optimized charge balancing, delivering significantly lower R_DS(on) × A (below 1 Ω·mm²) and reduced switching losses versus prior P6 generation. Its gate plateau voltage of 5.2 V and low 7 Ω gate resistance support stable, low-ringing drive with standard gate drivers.

The body diode features 900 A/µs diF/dt capability and 207 ns reverse recovery time under 400 V/4 A conditions, enabling reliable operation in discontinuous conduction mode (DCM) PFC and synchronous rectification without external snubbers. Thermal design is simplified by its 1.31 °C/W R_thJC and 95 W P_tot at T_C = 25°C.

Key Specifications

Pinout & Package

IPB60R120P7ATMA1 is housed in a surface-mount D²PAK (PG-TO263-3) package with exposed drain pad for thermal performance. Pin 1 is Source, Pin 2 is Gate, Pin 3 is Drain - matching standard TO-263 layout conventions and supporting PCB-level thermal vias under the drain tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with IPW60R120P7 and STP60N120, IPB60R120P7ATMA1 offers optimal balance of SMT footprint, thermal resistance (1.31 °C/W), and commutation ruggedness (900 A/µs) for space-constrained, high-efficiency PFC stages - making it the preferred choice for next-gen server and telecom power supplies where board area and thermal headroom are critical.

Availability

IPB60R120P7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term manufacturability, and JEDEC-qualified industrial reliability.

Supply support for IPB60R120P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ P7 product line was engineered specifically for high-frequency, high-efficiency AC-DC conversion in datacenter, telecom, and industrial power supplies - emphasizing low Eoss, rugged body diodes, and ease of gate drive integration.

FAQ

What is the maximum recommended gate resistor value for IPB60R120P7ATMA1 in a 250 kHz LLC resonant converter?

The datasheet specifies 5.3 Ω gate resistor for dynamic characterization at 250 kHz. For stable operation with minimal ringing, a 4.7–6.8 Ω non-inductive resistor is recommended. Higher values (>10 Ω) increase switching loss and delay ZVS onset; lower values (<3.3 Ω) risk overshoot and EMI. Layout parasitics must be minimized regardless of R_G value.

Can IPB60R120P7ATMA1 replace IPB60R120P6 in an existing PFC design?

Yes - IPB60R120P7ATMA1 is a direct drop-in replacement for IPB60R120P6 with identical pinout, package, and voltage/current ratings. It offers lower R_DS(on) (120 mΩ vs. 135 mΩ), reduced E_oss (4.0 µJ vs. 5.2 µJ), and improved diF/dt (900 A/µs vs. 750 A/µs), enabling measurable efficiency gains without layout changes.

Is ferrite bead isolation required on the gate when paralleling two IPB60R120P7ATMA1 devices?

Yes - the datasheet explicitly recommends individual ferrite beads on each gate line when paralleling. This mitigates gate oscillation and current imbalance caused by trace inductance mismatch. A 600 Ω @ 100 MHz bead with ≤0.5 Ω DC resistance is typical; gate driver output impedance must also be matched within ±5%.

What is the minimum PCB copper area required for thermal performance at 75 W continuous dissipation?

For 75 W dissipation at T_C = 100°C, a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² of 70 µm-thick copper on the drain layer achieves ≤1.31 °C/W R_thJC. Additional thermal vias (≥12× 0.3 mm diameter) under the drain pad and connection to internal ground plane further reduce R_thJA to ~35 °C/W in vertical orientation.