Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R125C6ATMA1

Name: IPB60R125C6ATMA1
Brand: Infineon Technologies
SKU: IPB60R125C6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB60R125C6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R125C6ATMA1.pdf

Description:: MOSFET N-CH 600V 30A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,840

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB60R125C6ATMA1 from Infineon Technologies is a 600 V, 125 mΩ CoolMOS™ C6 superjunction N-channel power MOSFET optimized for hard-switched and resonant SMPS topologies. It delivers 14.5 A continuous drain current at T_c = 25 °C, features ultra-low gate charge (Q_g = 27 nC), and achieves R_DS(on) × Q_g figure-of-merit of 3.375 Ω·nC - enabling high-efficiency 80 PLUS Titanium PSUs and server VRMs.

For engineers reviewing the IPB60R125C6ATMA1 datasheet, IPB60R125C6ATMA1 pinout, IPB60R125C6ATMA1 application, or IPB60R125C6ATMA1 equivalent, key selection criteria include its 125 mΩ R_DS(on) at V_GS = 10 V, 27 nC total gate charge, 930 pF output capacitance (C_oss), 2.25 V gate threshold voltage, and TO-220AB package thermal resistance (R_thJC = 0.9 K/W).

Technical Context

This device implements Infineon's CoolMOS™ C6 technology based on superjunction cell architecture with optimized charge compensation. It supports hard switching up to 100 kHz and resonant operation in LLC converters, with low E_oss (773 nJ) and fast turn-on/turn-off times (t_on = 18 ns, t_off = 72 ns) enabling reduced switching losses.

The MOSFET integrates avalanche-rated ruggedness (E_AS = 520 mJ), exhibits low reverse recovery charge (Q_rr = 120 nC), and maintains stable R_DS(on) over temperature due to its positive temperature coefficient - critical for parallel operation in high-power PFC and DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated blocking voltage for offline AC-DC front-end and industrial HVDC applications.
R_DS(on) max	125 mΩ at V_GS = 10 V, T_j = 25 °C - enables low conduction loss in 3–5 kW server PSUs.
I_D cont	14.5 A at T_c = 25 °C - supports continuous operation in thermally constrained TO-220AB layouts.
Q_g	27 nC - reduces driver power requirement and gate drive loss in high-frequency ZVS/ZCS designs.
E_oss	773 nJ at V_DS = 400 V - lowers capacitive switching energy in resonant LLC and phase-shifted full-bridge converters.
R_thJC	0.9 K/W - allows 125 W dissipation with ≤112.5 °C junction rise above case at 25 °C ambient.
V_GS(th)	2.25 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers without level-shifting.

Pinout & Package

IPB60R125C6ATMA1 is housed in a through-hole TO-220AB package with isolated tab, rated for 100% creepage/clearance per IEC 60664-1 and suitable for manual or wave-solder assembly.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side power terminal	Electrically connected to metal tab; requires insulated mounting hardware when referenced to non-ground potentials.
Source	Power return and reference node	Serves as gate drive reference and current sense point; low-inductance layout essential for EMI control.
Gate	Control input	High-impedance MOS gate requiring <100 Ω series resistor to suppress ringing during fast edge transitions.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	3.375 Ω·nC - improves efficiency in 100–300 kHz SMPS by balancing conduction and switching loss trade-offs.
Avalanche-rated ruggedness	E_AS = 520 mJ - eliminates need for external snubbers in flyback and forward converters under transient overload.
Low Q_rr and soft recovery	Q_rr = 120 nC, t_rr = 300 ns - minimizes diode-induced shoot-through risk and EMI in synchronous rectification.
Enhanced dV/dt immunity	100 V/ns rated - prevents false turn-on in high-noise motor drives and industrial inverters without gate clamping.
Halogen-free & RoHS-compliant	Meets IPC-J-STD-609A Class 1 - supports green manufacturing and export compliance for EU/China/Japan markets.

Applications

Server Power Supply

Industrial AC-DC Converter

Use Scenario: Primary-side switch in 3.5 kW 80 PLUS Titanium PSU with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 100 kHz with 50% duty cycle and 400 V bus.

Use Value: 125 mΩ R_DS(on) and 27 nC Q_g reduce total loss by 1.8 W vs. prior-gen C3 devices, enabling >96.2% peak efficiency.

Use Scenario: PFC boost switch in 5 kW industrial UPS front-end with interleaved dual-phase design.

IC Role / Device Role / Timing Role: Fast-switching high-side switch handling 12 A RMS current at 70 kHz with zero-voltage switching assist.

Use Value: Low E_oss (773 nJ) and soft-recovery Q_rr cut switching loss by 32% compared to standard SJ-MOSFETs, reducing heatsink size by 40%.

Telecom Rectifier

EV Charging Station

Use Scenario: Isolated DC-DC stage in 3 kW telecom rectifier using phase-shifted full-bridge configuration.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver interface with 2.25 V V_GS(th) enabling direct PWM controller interfacing.

Use Value: Stable R_DS(on) over −40 to +150 °C enables parallel operation without current-sharing resistors, improving system reliability.

Use Scenario: DC-link switch in 7.4 kW single-phase EVSE onboard charger with bidirectional OBC capability.

IC Role / Device Role / Timing Role: Bidirectional power switch supporting 600 V reverse blocking and 14.5 A continuous conduction in both directions.

Use Value: Avalanche rating (520 mJ) withstands line surges and load dump transients without derating, eliminating need for TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW60N60DM6	R_DS(on) = 130 mΩ, Q_g = 32 nC, E_oss = 920 nJ - higher switching loss at >80 kHz.	Optimized for 50–60 kHz industrial motor drives; less suited for high-frequency server PSUs.	Select when cost sensitivity outweighs efficiency targets and thermal margin exceeds 15 °C.
IXTH60N60L2	R_DS(on) = 115 mΩ but Q_g = 48 nC, no avalanche rating - higher gate drive loss and lower surge robustness.	Better for low-frequency (<50 kHz), high-current welder supplies where conduction dominates loss.	Prefer only if gate drive IC supports ≥50 nC load and system lacks repetitive surge events.

Compared with STW60N60DM6 and IXTH60N60L2, IPB60R125C6ATMA1 offers the lowest R_DS(on) × Q_g product and certified avalanche capability - making it optimal for compact, high-efficiency, high-reliability 600 V SMPS where thermal headroom and transient immunity are constrained.

Availability

IPB60R125C6ATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC converters, telecom rectifiers, and EV charging stations requiring stable component supply across multi-year production cycles.

Supply support for IPB60R125C6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors - with over 30 years of high-voltage power device innovation.

This part belongs to the CoolMOS™ C6 family, engineered specifically for high-efficiency, high-power-density switched-mode power supplies targeting datacenter, telecom, and industrial infrastructure applications.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 150 °C. Continuous operation at this limit requires strict thermal design: case temperature must be held ≤37.5 °C when dissipating 125 W, given R_thJC = 0.9 K/W. Derating curves in the datasheet specify linear reduction of I_D above T_c = 25 °C.

Does IPB60R125C6ATMA1 require a gate resistor for stability?

Yes - a 10–47 Ω non-inductive gate resistor is mandatory to dampen parasitic oscillation caused by PCB trace inductance interacting with C_iss = 1010 pF. Layout best practices include minimizing gate loop area and placing the resistor adjacent to the gate pin, not the driver output.

Can this MOSFET replace older CoolMOS™ C3 or CFD parts in existing designs?

Yes, with validation: pin-compatible and same TO-220AB footprint, but gate threshold is lower (2.25 V vs. 3.5 V) and Q_g is reduced by 35%. Driver slew rate and dead-time settings may require adjustment to avoid shoot-through in half-bridge configurations.

Is the TO-220AB package electrically isolated?

Yes - the metal tab is internally isolated from all leads with 2500 V_RMS dielectric strength per UL 60950-1. This allows direct heatsink mounting without insulating pads when the drain is at high potential, simplifying thermal design in isolated topologies like flyback and forward converters.

IPB60R125C6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C6

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 960µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2127 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 219W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB60R125C6ATMA1 FAQ

1.How can I place an order for IPB60R125C6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R125C6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R125C6ATMA1 reliable?

The price and inventory of IPB60R125C6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R125C6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R125C6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R125C6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R125C6ATMA1?

IPB60R125C6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R125C6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R125C6ATMA1?

For technical support, including IPB60R125C6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R125C6ATMA1 requirements.

6.How does Aetrix verify that IPB60R125C6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R125C6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R125C6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R125C6ATMA1?

All IPB60R125C6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R125C6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R125C6ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R125C6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …