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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R125CFD7ATMA1

Name: IPB60R125CFD7ATMA1
Brand: Infineon Technologies
SKU: IPB60R125CFD7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB60R125CFD7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R125CFD7ATMA1.pdf

Description:: MOSFET N-CH 600V 18A TO263-3

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Product details

Overview

IPB60R125CFD7ATMA1 from Infineon Technologies is a 600 V, 125 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction MOSFET in D²PAK (PG-TO263-3) package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 36 nC gate charge, 0.47–0.94 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPB60R125CFD7ATMA1 datasheet, IPB60R125CFD7ATMA1 pinout, IPB60R125CFD7ATMA1 application, or IPB60R125CFD7ATMA1 equivalent, this page provides verified technical context, validated pin functions, real-world application mappings, and confirmed alternatives for resonant SMPS design-in.

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with optimized charge balancing for reduced Qg (36 nC typ.) and best-in-class Qrr (0.47–0.94 µC). Its ultra-fast body diode supports hard commutation up to 1300 A/µs diF/dt and 70 V/ns reverse dv/dt at Tj = 25°C.

The device features low RDS(on) × Qg (FOM) and RDS(on) × Eoss figures, enabling minimal switching losses in ZVS and LLC operation. Its 1.36 °C/W junction-to-case thermal resistance and 62 °C/W junction-to-ambient rating (minimal PCB) support thermally constrained industrial power designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports primary-side switching in 400 V DC bus telecom/server PSUs
R_DS(on),max	125 mΩ at T_j = 150°C - enables low conduction loss in high-current resonant half-bridge legs
Q_g,typ	36 nC - reduces gate drive power and enables faster turn-on in high-frequency LLC controllers
Q_rr	0.47–0.94 µC - minimizes body diode recovery loss and EMI in zero-voltage switching transitions
diF/dt	1300 A/µs - ensures robust hard commutation without oscillation or failure during synchronous rectification
E_oss@400V	4.1 µJ - lowers capacitive turn-off energy, critical for efficiency in >300 kHz resonant topologies
T_j,max	150°C - qualified per JEDEC for industrial applications with sustained thermal stress

Pinout & Package

IPB60R125CFD7ATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain tab for enhanced thermal performance. The drain connects directly to the copper pad on PCB for low R_thJC (1.36 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal; low input capacitance (C_iss = 1503 pF) eases gate driver selection
Pin 2 (Drain) + Tab	High-voltage power output	Tab is electrically connected to Pin 2; requires isolated thermal pad and creepage clearance for 600 V
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 102–153 ns and Qrr = 0.47–0.94 µC - eliminates need for external SiC/Schottky anti-parallel diodes in ZVS designs
Low R_DS(on) × Q_g FOM	125 mΩ × 36 nC = 4.5 Ω·nC - enables higher frequency operation without sacrificing conduction or switching loss balance
Improved dv/dt ruggedness	70 V/ns reverse diode dv/dt - prevents false turn-on during high dV/dt commutation in high-side configurations
JEDEC industrial qualification	Qualified per JESD47 - ensures reliability under thermal cycling, humidity, and long-term bias stress in 24/7 power systems

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW phase-shifted full-bridge (PSFB) PSU for AI server racks.

IC Role / Device Role / Timing Role: High-side and low-side switching element operating at 100–200 kHz with ZVS, handling 48 A peak drain current.

Use Value: Low Qrr and fast diF/dt prevent shoot-through and reduce dead-time losses, improving system efficiency by ≥0.8% at full load.

Use Scenario: LLC resonant converter in 48 V telecom rectifier delivering 2.5 kW with <15 mV ripple.

IC Role / Device Role / Timing Role: Half-bridge power switch synchronized to resonant tank frequency (250–500 kHz), managing 32 A RMS current.

Use Value: Ultra-low E_oss (4.1 µJ) and low C_oss nonlinearity minimize capacitive turn-off loss, enabling >97% peak efficiency.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: AC/DC PFC + DC/DC stage in bi-directional 11 kW OBC supporting 400 V/800 V battery architectures.

IC Role / Device Role / Timing Role: Active clamp flyback or CLLC switch operating with variable frequency control and soft transition across wide input range.

Use Value: 1300 A/µs diF/dt rating ensures reliable commutation during regenerative braking transients without snubber redesign.

Use Scenario: Three-phase inverter stage in 15 kVA industrial UPS with active front-end and IGBT replacement goal.

IC Role / Device Role / Timing Role: 600 V bridge arm switch replacing 650 V IGBTs to reduce conduction loss and enable 20 kHz+ PWM without tail current penalty.

Use Value: 125 mΩ R_DS(on) at 150°C and 1.36 °C/W R_thJC allow 25% smaller heatsink vs. comparable IGBTs in forced-air-cooled enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R125CFD7	TO-247-3 through-hole package; identical die, higher R_thJA (45 °C/W vs. 35–45 °C/W SMD), no exposed tab	Better suited for prototyping, high-reliability legacy designs, or where mechanical mounting torque >1.2 Ncm is required	Select when thermal interface to heatsink is superior to PCB copper area, or when wave-soldering is preferred over reflow
IPP60R125CFD7	TO-220FP package; same die but lower P_tot (63 W vs. 92 W), higher R_thJC (2.2 °C/W), no drain tab	Limited to <1.5 kW applications; unsuitable for high-diF/dt or high-duty-cycle resonant operation	Choose only for cost-sensitive, space-constrained low-power adapters where peak efficiency is secondary to BOM cost

Compared with IPW60R125CFD7 and IPP60R125CFD7, the IPB60R125CFD7ATMA1 offers optimal thermal performance via its D²PAK drain tab, highest power density among CFD7 variants, and direct compatibility with automated SMT assembly-making it the preferred choice for volume production of compact, high-efficiency resonant converters.

Availability

IPB60R125CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified reliability, and high-volume SMT manufacturability.

Supply support for IPB60R125CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with core expertise in silicon and SiC power devices.

This part belongs to the CoolMOS™ CFD7 product line-designed specifically for soft-switching resonant topologies like LLC and PSFB, targeting efficiency, power density, and ruggedness in high-reliability AC/DC and DC/DC conversion.

FAQ

Is IPB60R125CFD7ATMA1 pin-compatible with earlier CoolMOS™ CFD2 devices?

No. While both belong to the CoolMOS™ family, CFD7 introduces revised gate charge profile, lower Qrr, and improved diF/dt capability. Pinout is identical (D²PAK-3), but gate drive timing and snubber requirements differ due to faster switching dynamics and reduced Qg. Layout reuse is possible, but gate resistor and driver strength must be re-evaluated.

What is the recommended gate resistor value for ZVS operation at 200 kHz?

Based on datasheet test conditions (RG = 5.3 Ω, VDD = 400 V, ID = 8.1 A), a 4.7–6.8 Ω non-inductive gate resistor is recommended for ZVS in PSFB. Lower values improve turn-on speed but increase ringing risk; ferrite beads are advised for paralleling per Infineon's note. Thermal derating above 100 kHz requires verifying gate driver peak current capability (>2 A).

Does this MOSFET require a negative gate turn-off voltage?

No. The device specifies ±20 V static and ±30 V dynamic gate-source voltage ratings. A standard 0 V to 12 V or 0 V to 15 V gate drive suffices. Negative turn-off is unnecessary due to its robust dv/dt immunity (70 V/ns reverse diode dv/dt) and low Miller capacitance, though it may be used optionally to accelerate turn-off in high-noise environments.

Can IPB60R125CFD7ATMA1 replace IGBTs in a 15 kVA UPS inverter?

Yes-with design adjustments. Its 600 V rating, 125 mΩ R_DS(on), and 1300 A/µs diF/dt support IGBT replacement in 20–50 kHz three-phase inverters. However, gate drive must deliver higher peak current (≥3 A), layout must minimize source inductance (<1 nH), and thermal interface must handle 92 W dissipation. Efficiency gains exceed 1.2% at partial load due to absence of tail current.

IPB60R125CFD7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 390µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1503 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB60R125CFD7ATMA1 FAQ

1.How can I place an order for IPB60R125CFD7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R125CFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R125CFD7ATMA1 reliable?

The price and inventory of IPB60R125CFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R125CFD7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R125CFD7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R125CFD7ATMA1 transactions.

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4.How is shipping managed for IPB60R125CFD7ATMA1?

IPB60R125CFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R125CFD7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R125CFD7ATMA1?

For technical support, including IPB60R125CFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R125CFD7ATMA1 requirements.

6.How does Aetrix verify that IPB60R125CFD7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R125CFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R125CFD7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R125CFD7ATMA1?

All IPB60R125CFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R125CFD7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R125CFD7ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R125CFD7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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