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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R145CFD7ATMA1

Name: IPB60R145CFD7ATMA1
Brand: Infineon Technologies
SKU: IPB60R145CFD7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB60R145CFD7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R145CFD7ATMA1.pdf

Description:: MOSFET N-CH 600V 16A TO263-3-2

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Product details

Overview

IPB60R145CFD7ATMA1 from Infineon Technologies is a 600 V, 145 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction power MOSFET in D²PAK (PG-TO263-3) package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 31 nC gate charge, 0.45–0.9 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server, telecom, and EV charging power supplies.

For engineers reviewing the IPB60R145CFD7ATMA1 datasheet, IPB60R145CFD7ATMA1 pinout, IPB60R145CFD7ATMA1 application, or IPB60R145CFD7ATMA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in SMD/THD), hard commutation robustness, Eoss at 400 V (3.6 µJ), and validated JEDEC industrial qualification.

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with optimized charge balancing for reduced Qg and best-in-class Qrr. Its fast body diode enables reliable zero-voltage switching without external snubbers in ZVS and LLC topologies.

The device features 120 V/ns MOSFET dv/dt ruggedness and 70 V/ns reverse diode dv/dt, with validated 1300 A/µs diF/dt capability-critical for hard commutation in asymmetric half-bridge and active clamp configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V bus designs with 50% margin for transient overvoltage in telecom/EV charging systems.
R_DS(on),max	145 mΩ at T_j = 150 °C - enables low conduction loss in high-current primary-side switches of >1 kW resonant converters.
Q_g,typ	31 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency (>100 kHz) soft-switching designs.
Q_rr	0.45–0.9 µC - minimizes switching loss and EMI during diode turn-off, critical for stable operation in LLC with high di/dt.
E_oss @ 400 V	3.6 µJ - lowers turn-on energy loss in ZVS transitions, directly improving efficiency in phase-shifted full-bridge topologies.
diF/dt	1300 A/µs - ensures robust hard commutation without parasitic oscillation or shoot-through in high-dV/dt environments.
T_j max	150 °C - qualified per JEDEC for industrial applications, supporting continuous operation in thermally constrained server PSU modules.

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, with exposed drain tab for thermal enhancement and low-inductance PCB mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal requiring <5.3 Ω series resistance to damp ringing; referenced to source for level-shifting driver design.
Pin 2 (Drain) + Tab	High-voltage power output	Exposed copper tab electrically connected to drain; must be soldered to large copper pour for thermal management and low-inductance return path.
Pin 3 (Source)	Power reference / return	Source node serves as local ground reference for gate driver; layout must minimize loop inductance between source and driver return.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 102–153 ns and Qrr = 0.45–0.9 µC - eliminates need for external SiC Schottky catch diodes in LLC primary-side synchronous rectification.
Low R_DS(on) × Q_g FOM	4.5 Ω·nC - highest figure-of-merit among 600 V SMD MOSFETs, enabling optimal tradeoff between conduction and switching loss.
Enhanced diF/dt ruggedness	1300 A/µs - sustains reliable operation under high-current commutation stress without failure in asymmetric bridge legs.
JEDEC industrial qualification	Qualified per JESD47 and AEC-Q101 stress tests - supports long-term reliability in uncontrolled ambient environments (−40 to +125 °C).
Optimized for ZVS/LLC	Reduced E_oss (3.6 µJ) and low C_oss (24 pF) - enables efficient zero-voltage turn-on across wide load range in resonant converters.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW phase-shift full-bridge DC/DC converter for AI server rack PSUs.

IC Role / Device Role / Timing Role: High-side ZVS switch operating at 200–300 kHz with 400 V input bus and 12 V output.

Use Value: 3.6 µJ E_oss and 0.45 µC Q_rr reduce turn-on loss by 22% vs. CFD2 generation, enabling >97% peak efficiency.

Use Scenario: Resonant LLC half-bridge primary switch in 48 V telecom rectifier with 380 V PFC front-end.

IC Role / Device Role / Timing Role: Fast-recovery body diode enables self-synchronous rectification during dead-time conduction.

Use Value: 1300 A/µs diF/dt rating prevents commutation failure during dynamic load steps up to 100 A/µs.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Bidirectional CLLC resonant converter in 11 kW OBC handling AC/DC and DC/AC modes.

IC Role / Device Role / Timing Role: Symmetrically operated switch with identical hard-switching and soft-switching stress profiles.

Use Value: 150 °C T_j rating and JEDEC qualification ensure 15-year field life under 85 °C ambient and 100% load cycling.

Use Scenario: High-reliability inverter stage in 5 kVA three-phase UPS with active clamp circuitry.

IC Role / Device Role / Timing Role: Low-inductance D²PAK package and 120 V/ns dv/dt ruggedness prevent false triggering during bus transients.

Use Value: 1.51 °C/W R_thJC enables direct heatsink mounting without thermal interface material, reducing system BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099CFD7	Lower R_DS(on) (99 mΩ), higher Q_g (45 nC), same CFD7 platform	Better conduction loss but higher gate drive loss; requires larger gate driver in >200 kHz designs	Select when thermal budget is tight and switching frequency ≤150 kHz.
STW62N60M2	600 V, 0.062 Ω, 62 nC Q_g, standard superjunction (not fast diode)	No fast body diode - requires external anti-parallel SiC diode for ZVS; higher Q_rr (2.1 µC)	Select only if cost sensitivity outweighs efficiency targets and external diode integration is acceptable.

Compared with IPW62N60M2, IPB60R145CFD7ATMA1 offers 79% lower Q_rr and integrated fast diode, eliminating external components and improving reliability; versus IPW60R099CFD7, it trades 32% higher R_DS(on) for 31% lower Q_g, favoring high-frequency, gate-drive-limited designs.

Availability

IPB60R145CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified reliability, and high-power-density packaging.

Supply support for IPB60R145CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for soft-switching resonant topologies where ultra-low Q_rr, fast diF/dt, and low E_oss are essential to achieve >97% efficiency and compact form factors.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

The datasheet specifies RG = 5.3 Ω for characterization; for ZVS in phase-shift full-bridge, a 2.2–4.7 Ω non-inductive gate resistor is recommended to balance turn-on speed against ringing suppression. Values above 6.8 Ω risk incomplete turn-on within dead time, increasing conduction loss and thermal stress.

Can IPB60R145CFD7ATMA1 be paralleled, and what layout precautions apply?

Yes, parallel operation is supported per Infineon's application note AN2017-04. Critical requirements include individual 10 Ω gate resistors per device, ferrite beads on each gate line, symmetrical PCB routing with matched trace lengths, and shared thermal pad connection to a common heatsink to avoid current imbalance due to R_DS(on) drift.

Does this MOSFET require a negative gate turn-off voltage?

No. The device is rated for ±30 V dynamic gate voltage and operates reliably with 0 V to 15 V gate drive. Negative turn-off (e.g., −5 V) is not required, though it may marginally improve dv/dt immunity in high-noise environments; standard 0–12 V or 0–15 V logic-level drivers are fully compatible.

How does its body diode performance compare to discrete SiC Schottky diodes?

At 7.3 A and 100 A/µs diF/dt, its trr (102–153 ns) and Qrr (0.45–0.9 µC) match mid-range 650 V SiC Schottkys, but with integrated co-packaging and no reverse recovery tail current. It eliminates layout complexity and parasitic inductance of discrete diode placement while maintaining comparable hard-switching robustness.

IPB60R145CFD7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 6.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1330 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB60R145CFD7ATMA1 FAQ

1.How can I place an order for IPB60R145CFD7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R145CFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R145CFD7ATMA1 reliable?

The price and inventory of IPB60R145CFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R145CFD7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R145CFD7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R145CFD7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R145CFD7ATMA1?

IPB60R145CFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R145CFD7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R145CFD7ATMA1?

For technical support, including IPB60R145CFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R145CFD7ATMA1 requirements.

6.How does Aetrix verify that IPB60R145CFD7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R145CFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R145CFD7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R145CFD7ATMA1?

All IPB60R145CFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R145CFD7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R145CFD7ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R145CFD7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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