Infineon Technologies IPB60R160P6ATMA1

Overview

IPB60R160P6ATMA1 from Infineon Technologies is a 600 V, 23.8 A (T_C=25°C) superjunction N-channel power MOSFET in D²PAK (TO-263) package, featuring 160 mΩ max R_DS(on), 44 nC typical gate charge, and 5.7 µJ E_oss at 400 V - optimized for high-efficiency PFC and hard-switching SMPS in server PSUs and telecom rectifiers.

For engineers reviewing the IPB60R160P6ATMA1 datasheet, IPB60R160P6ATMA1 pinout, IPB60R160P6ATMA1 application, or IPB60R160P6ATMA1 equivalent, key selection criteria include its 100 V/ns dv/dt ruggedness, 500 A/µs body diode commutation capability, low R_DS(on) × Q_g figure-of-merit, JEDEC industrial-grade qualification, and TO-263 thermal resistance of 0.71 °C/W (junct-to-case).

Technical Context

This CoolMOS™ P6 device implements a superjunction cell structure enabling simultaneous reduction of conduction and switching losses. Its 600 V blocking rating supports universal-input offline converters, while the 6.1 V gate plateau voltage ensures stable turn-on under varying drive conditions.

The MOSFET delivers 497 mJ single-pulse avalanche energy and supports 68 A pulsed drain current, making it suitable for resonant topologies like LLC where overcurrent and voltage transients are common. Its 0.9 V body diode forward voltage at 11.3 A reduces reverse recovery losses in synchronous rectification scenarios.

Key Specifications

Pinout & Package

IPB60R160P6ATMA1 uses the PG-TO263 (D²PAK) surface-mount package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads, RoHS-compliant Pb-free plating, and halogen-free mold compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW60R160P6 and IPP60R160P6, IPB60R160P6ATMA1 offers optimal balance of SMT manufacturability, thermal performance (0.71 °C/W R_thJC), and board space efficiency - making it preferred for high-density server and telecom power modules where automated assembly and thermal density are critical.

Availability

IPB60R160P6ATMA1 is available at Aetrix Electronics and suitable for server power supply PFC stages, telecom rectifier modules, and industrial UPS inverter stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPB60R160P6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.

The CoolMOS™ P6 product line was engineered specifically for high-efficiency, high-power-density offline power conversion - targeting datacenter, telecom, and industrial SMPS where reduced conduction and switching losses directly improve system thermal design and energy certification compliance.

FAQ

What is the maximum continuous drain current for IPB60R160P6ATMA1 at 100°C case temperature?

The maximum continuous drain current is 15.0 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.2 datasheet. This rating is thermally limited by junction temperature (T_j ≤ 150°C) and assumes proper PCB copper area (6 cm² drain pad) and no forced airflow. Derating curves in Diagram 1 confirm linear reduction from 23.8 A at 25°C to 15.0 A at 100°C.

Does IPB60R160P6ATMA1 require a gate resistor for stability in hard-switching applications?

Yes - a 1.7 Ω gate resistor is used in the datasheet's switching time test circuit (Table 11), and application notes recommend 1.5–2.2 Ω to suppress oscillation and limit peak gate current. Lower values risk ringing and EMI; higher values increase switching losses. Ferrite beads are advised only when paralleling multiple devices.

Can IPB60R160P6ATMA1 replace older CoolMOS™ P5 devices in existing designs?

Yes - it is a direct drop-in replacement for IPB60R160P5 in D²PAK, with identical pinout, voltage rating, and R_DS(on). Key improvements include 15% lower E_oss, 10% lower Q_g, and enhanced dv/dt ruggedness. No layout or drive circuit changes are required, though efficiency gains may allow downsizing heatsinks.

What is the recommended PCB layout practice for the drain tab of IPB60R160P6ATMA1?

The drain tab must be soldered to a minimum 6 cm² copper area on the top layer, connected via ≥6 thermal vias (0.3 mm diameter) to inner-layer ground or power planes. Avoid narrow traces between tab and copper pour - use solid fill. Thermal relief is prohibited; the tab serves both electrical and thermal functions, and insufficient copper increases R_thJC beyond 0.71 °C/W.