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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R210CFD7ATMA1

Name: IPB60R210CFD7ATMA1
Brand: Infineon Technologies
SKU: IPB60R210CFD7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB60R210CFD7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R210CFD7ATMA1.pdf

Description:: MOSFET N-CH 600V 12A TO263-3

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Product details

Overview

IPB60R210CFD7ATMA1 from Infineon Technologies is a 600 V, 210 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction MOSFET in D²PAK (TO-263-3) package, featuring 23 nC typical gate charge, 0.385 µC reverse recovery charge, and 1300 A/µs diF/dt ruggedness. It is engineered for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters in server power supplies and EV charging systems.

For engineers reviewing the IPB60R210CFD7ATMA1 datasheet, IPB60R210CFD7ATMA1 pinout, IPB60R210CFD7ATMA1 application, or IPB60R210CFD7ATMA1 equivalent, key selection criteria include R_DS(on)×Q_g figure-of-merit, hard commutation robustness, E_oss at 400 V (2.6 µJ), and validated JEDEC industrial qualification.

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with optimized charge distribution to reduce Q_g and Q_rr, enabling high-efficiency ZVS operation. Its ultra-fast body diode supports high diF/dt (1300 A/µs) and low reverse recovery time (92–138 ns), critical for reliable hard commutation in asymmetric half-bridge and LLC primary-side switching.

The device delivers best-in-class R_DS(on)×E_oss and R_DS(on)×Q_g FoMs, with 1.94 °C/W junction-to-case thermal resistance and rated for continuous operation up to T_j = 150 °C. Gate plateau voltage is 5.7 V at 400 V V_DS, ensuring stable turn-on under high dv/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V bus designs with 50 % margin for transient overvoltage in telecom/server PSUs.
R_DS(on),max	210 mΩ at T_j = 150 °C - enables low conduction loss in high-current LLC primary switches with minimal heatsink requirement.
Q_g,typ	23 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency (>100 kHz) resonant converters.
Q_rr	0.385 µC typ at 400 V - minimizes energy loss and voltage overshoot during body diode commutation in ZVS transitions.
E_oss	2.6 µJ at 400 V - lowers turn-off switching loss and improves efficiency in high-frequency soft-switching topologies.
diF/dt	1300 A/µs - ensures robustness against fast current reversal in hard-commutated phases without oscillation or failure.
T_j,max	150 °C - qualified per JEDEC for industrial applications, supporting sustained operation in compact, thermally constrained enclosures.

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount with exposed drain tab for enhanced thermal performance. Tab is electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires <20 V absolute max rating; low input capacitance (C_iss = 1015 pF) eases driver design.
Pin 2 / Tab	Drain	Main high-voltage power terminal; tab provides low-inductance, high-current path and primary thermal interface to PCB copper.
Pin 3	Source	Power return and reference node for gate drive; tied to source of synchronous rectifier or controller ground in half-bridge layouts.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 92–138 ns and Qrr = 0.385 µC - enables clean zero-voltage switching without snubbers in LLC phase-shifted topologies.
Low R_DS(on) × Q_g FoM	4.83 Ω·nC - directly improves tradeoff between conduction and switching loss, increasing full-load efficiency by >0.5 % vs. prior CFD2 generation.
High diF/dt ruggedness	1300 A/µs - sustains repeated hard commutation events in asymmetrical bridge configurations without degradation or latch-up.
JEDEC industrial qualification	Qualified per JESD47 and AEC-Q101 stress tests - guarantees reliability in 24/7 server and EVSE power stages operating at elevated ambient temperatures.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant DC-DC converter for 48 V intermediate bus in hyperscale data center racks.

IC Role / Device Role / Timing Role: High-side resonant switch operating at 250–500 kHz with ZVS turn-on and controlled body diode commutation.

Use Value: 2.6 µJ E_oss and 0.385 µC Q_rr reduce total switching loss by 18 % compared to CFD2, enabling 96.8 % peak efficiency at 50 % load.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in -48 V telecom rectifier delivering 2.5 kW with forced-air cooling.

IC Role / Device Role / Timing Role: Main switching transistor handling 12 A RMS drain current with 1300 A/µs diF/dt capability during clamping transitions.

Use Value: 1300 A/µs diF/dt rating eliminates need for external diode snubbers, reducing BOM count and layout area by 12 %.

EV Onboard Charger

Industrial AC-DC Module

Use Scenario: Primary switch in bidirectional CLLC resonant converter for 11 kW OBC with 800 V battery interface and 400 V grid input.

IC Role / Device Role / Timing Role: High-reliability 600 V switch managing 42 A pulsed drain current and 150 °C junction temperature cycling.

Use Value: JEDEC industrial qualification and 150 °C T_j,max support 15-year field life under automotive thermal cycling profiles (−40 to +105 °C ambient).

Use Scenario: High-density 1.5 kW industrial AC-DC front-end using interleaved PFC + LLC topology in DIN-rail mounted enclosure.

IC Role / Device Role / Timing Role: Resonant switch optimized for 300 kHz operation with minimal gate drive loss (23 nC Q_g) and low R_DS(on) drift over temperature.

Use Value: R_DS(on) = 210 mΩ @ 150 °C ensures stable conduction loss across full industrial temperature range, avoiding derating penalties.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099C7	Lower R_DS(on) (99 mΩ), higher Q_g (42 nC), same CFD7 platform	Better conduction loss but higher gate drive loss; suited for <200 kHz operation where Q_g impact is secondary	Select when optimizing for full-load efficiency at lower frequencies and thermal headroom permits larger gate driver.
IPP60R190C7	Higher R_DS(on) (190 mΩ), lower Q_g (19 nC), TO-220FP package	Lower switching loss and easier thermal mounting, but limited to 12 A continuous current and no D²PAK thermal advantage	Select for cost-sensitive industrial SMPS where PCB space is less constrained and peak power <1.2 kW.

Compared with IPB60R210CFD7ATMA1, IPW60R099C7 trades higher gate drive complexity for improved conduction efficiency, while IPP60R190C7 sacrifices R_DS(on) for reduced Q_g and simpler mechanical integration-making the original optimal for balanced 2–5 kW resonant designs requiring both thermal density and commutation robustness.

Availability

IPB60R210CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified reliability, and high-power-density packaging.

Supply support for IPB60R210CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in high-voltage MOSFETs and SiC devices.

This part belongs to the CoolMOS™ CFD7 product line, designed specifically to maximize efficiency and ruggedness in soft-switching resonant converters-including LLC, phase-shifted full-bridge, and active-clamp topologies-targeting data center, telecom, and EV infrastructure.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

For ZVS operation at 300 kHz in an LLC converter, a gate resistor of 10.2 Ω is validated per the datasheet test condition (td(on)/td(off) timing). Values above 15 Ω increase turn-on delay and risk incomplete ZVS at light loads; below 5 Ω may cause ringing due to parasitic inductance. Ferrite beads are recommended for paralleling configurations.

Does this MOSFET require a negative gate turn-off voltage?

No. The device specifies ±30 V dynamic gate-source voltage rating, but standard 0 V to +12 V or +15 V gate drive is sufficient. Negative turn-off (e.g., −5 V) is not required for stability or dv/dt immunity-the 120 V/ns MOSFET dv/dt ruggedness and 5.7 V gate plateau ensure noise-immune switching with unipolar drive.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves trr = 92–138 ns and Qrr = 0.385 µC at 400 V, outperforming standard SJ-MOSFETs (typically >200 ns, >1.2 µC). This enables reliable ZVS without external SiC diodes in most LLC designs and eliminates reverse recovery-induced voltage spikes that degrade EMI and stress gate drivers.

Can IPB60R210CFD7ATMA1 be used in parallel configurations?

Yes, but with specific layout requirements: individual gate resistors (≥10 Ω), ferrite beads on each gate line, matched trace lengths, and symmetrical thermal coupling. The datasheet explicitly recommends this approach for paralleling, citing its matched threshold voltage (3.5–4.5 V) and low R_DS(on) tempco as enablers of current sharing.

IPB60R210CFD7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 210mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1015 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 64W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB60R210CFD7ATMA1 FAQ

1.How can I place an order for IPB60R210CFD7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R210CFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R210CFD7ATMA1 reliable?

The price and inventory of IPB60R210CFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R210CFD7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R210CFD7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R210CFD7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R210CFD7ATMA1?

IPB60R210CFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R210CFD7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R210CFD7ATMA1?

For technical support, including IPB60R210CFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R210CFD7ATMA1 requirements.

6.How does Aetrix verify that IPB60R210CFD7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R210CFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R210CFD7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R210CFD7ATMA1?

All IPB60R210CFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R210CFD7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R210CFD7ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R210CFD7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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