Infineon Technologies IPB60R280P6ATMA1
- Part No.:
- IPB60R280P6ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB60R280P6ATMA1.pdf
- Description:
- MOSFET N-CH 600V 13.8A D2PAK
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IPB60R280P6 from Infineon Technologies is a 600 V, 280 mΩ superjunction N-channel power MOSFET in D²PAK (TO-263) package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 13.8 A continuous drain current at 25°C, 26 nC total gate charge, and 3.5 µJ output energy at 400 V - enabling compact, cooler-running server PSUs and industrial adapters.
For engineers reviewing the IPB60R280P6 datasheet, IPB60R280P6 pinout, IPB60R280P6 application, or IPB60R280P6 equivalent, key selection criteria include RDS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation capability (500 A/µs), and thermal resistance (1.2 °C/W junction-to-case).
Technical Context
This CoolMOS™ P6 device implements a charge-compensated superjunction structure with optimized cell pitch and epitaxial doping profile to simultaneously reduce conduction loss (RDS(on) = 280 mΩ max @ 150°C) and switching loss (Eoss = 3.5 µJ @ 400 V). Its gate threshold voltage (4.0 V typ) and plateau voltage (6.1 V) support robust 12–15 V gate drive without overdrive risk.
The MOSFET features enhanced avalanche ruggedness (EAS = 285 mJ) and high di/dt capability (500 A/µs), making it suitable for discontinuous conduction mode (DCM) and transition-mode (TM) PFC controllers where fast body diode recovery and high commutation stress are present.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V DC bus designs with 50% voltage margin for surge and ringing. |
| RDS(on),max | 280 mΩ @ 150°C - enables low conduction loss in 10–15 A PFC boost stages without forced cooling. |
| Qg,typ | 26 nC - allows efficient 13 V gate drive with <1 W average gate power at 100 kHz switching. |
| Eoss@400V | 3.5 µJ - reduces turn-off loss and EMI in hard-switched topologies operating up to 100 kHz. |
| dv/dt ruggedness | 100 V/ns - withstands fast voltage transients in high-dV/dt environments like LLC resonant converters. |
| Body diode dI/dt | 500 A/µs - sustains high-current reverse recovery without snap-off or secondary breakdown in TM-PFC. |
| Tj max | 150 °C - qualified for industrial-grade operation per JEDEC J-STD-20, supporting extended thermal margins. |
Pinout & Package
IPB60R280P6 uses the PG-TO263-3 (D²PAK) surface-mount package with isolated tab. The drain connects to the large copper pad (tab), enabling low-inductance, high-current PCB routing and direct thermal coupling to heatsink via soldered pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Low-impedance gate terminal requiring <5.5 Ω series resistance to damp oscillation during fast switching. |
| Pin 2 (Drain) / Tab | High-voltage power path | Internally connected to the MOSFET's drain region and exposed copper tab - must be electrically isolated from heatsink unless referenced to same potential. |
| Pin 3 (Source) | Reference node | Serves as return path for gate drive and load current; requires low-inductance layout to minimize VGS noise during switching transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction architecture | Enables 600 V rating with RDS(on) × Qg figure-of-merit of 7.28 Ω·nC - 30% lower than prior CoolMOS™ P5 generation. |
| Enhanced dv/dt ruggedness | 100 V/ns rating ensures reliable operation under fast transient conditions without false turn-on in half-bridge configurations. |
| Optimized body diode | 263 ns reverse recovery time and 2.8 µC Qrr reduce switching losses and EMI in transition-mode PFC circuits. |
| Industrial qualification | JEDEC J-STD-20 and JESD22 compliant - validated for 1000-cycle temperature cycling and 1000-hour HTRB at 150 °C. |
| Pb-free & halogen-free | RoHS-compliant plating and mold compound - meets IPC-J-STD-609A Class 1 for moisture sensitivity (MSL1). |
Applications
| Server Power Supply (PFC Stage) | Industrial AC-DC Adapter |
|---|---|
|
Use Scenario: Boost PFC stage in 80 PLUS Titanium-certified 1.5 kW server PSU operating at 70 kHz in transition mode. IC Role / Device Role: Main switching transistor handling 12 A RMS input current with 400 V DC bus. Use Value: 280 mΩ RDS(on) and 3.5 µJ Eoss reduce total losses by 1.8 W vs. legacy SJ-MOSFET, improving efficiency from 96.2% to 96.5% at full load. |
Use Scenario: Primary-side switch in 300 W industrial adapter with universal AC input (85–265 VAC) and 400 V DC link. IC Role / Device Role: Hard-switched PWM transistor in flyback topology with 65 kHz fixed frequency. Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during line surges; 1.2 °C/W RthJC enables conduction-limited thermal design without active cooling. |
| LCD TV Backlight Inverter | Telecom Rectifier Module |
|
Use Scenario: Resonant half-bridge switch in CCFL or LED backlight inverter driving 200 W load at 50–100 kHz. IC Role / Device Role: High-side switching element subjected to repetitive unclamped inductive switching stress. Use Value: 285 mJ single-pulse avalanche energy absorbs energy from leakage inductance spikes without failure, eliminating need for snubbers. |
Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in 3 kW telecom rectifier with 48 V output. IC Role / Device Role: Synchronous rectification control MOSFET in auxiliary supply and main power stage. Use Value: 500 A/µs body diode dI/dt rating ensures clean commutation during zero-voltage switching transitions, reducing voltage overshoot and EMI. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R280P6 | Same die, TO-220 through-hole package; RthJC = 1.2 °C/W but higher mounting torque requirement (60 Ncm). | Better suited for prototyping or low-volume assemblies where wave soldering and mechanical mounting are preferred. | Select when manual assembly, field repairability, or heatsink clamping is required over automated SMT placement. |
| IPW60R280P6 | Same die, TO-247 package; identical RDS(on), Qg, and Eoss, but RthJC = 1.2 °C/W and larger footprint. | Preferred in high-power (>500 W) industrial inverters needing maximum thermal headroom and creepage clearance. | Choose for designs requiring >100 W continuous dissipation or compliance with reinforced insulation standards (IEC 62368). |
Compared with IPP60R280P6 and IPW60R280P6, IPB60R280P6 offers identical electrical performance in a space-optimized D²PAK package - delivering best-in-class power density for automated SMT production while maintaining industrial thermal reliability.
Availability
IPB60R280P6 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for IPB60R280P6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The CoolMOS™ P6 product line was engineered specifically for high-efficiency, high-density AC-DC conversion - targeting PFC, SMPS, and resonant topologies where low RDS(on) × Qg and robust ruggedness are critical.
FAQ
What is the maximum continuous drain current for IPB60R280P6 at 100°C case temperature?
The maximum continuous drain current is 8.8 A at TC = 100°C, as specified in Table 2 of the Rev. 2.2 datasheet. This value accounts for thermal derating due to junction-to-case thermal resistance (1.2 °C/W) and maximum junction temperature (150°C), ensuring safe operation under sustained load conditions.
Does IPB60R280P6 require a gate resistor for stable operation?
Yes - a gate resistor of 3.4 Ω is used in the datasheet's dynamic test conditions (Table 7), and Infineon recommends 2.2–10 Ω depending on switching speed and EMI requirements. Lower values improve switching speed but increase gate driver stress and ringing risk; higher values suppress oscillation at the cost of increased switching loss.
Can IPB60R280P6 replace older CoolMOS™ P5 devices in existing designs?
Yes - IPB60R280P6 is a direct drop-in replacement for IPB60R280P5 in D²PAK, offering identical pinout, voltage rating, and RDS(on), plus improved Eoss (−15%), Qg (−12%), and dv/dt ruggedness (+25 V/ns). No layout or drive circuit changes are required for most PFC and PWM applications.
Is the drain tab of IPB60R280P6 electrically isolated from the PCB substrate?
No - the drain is internally connected to the exposed copper tab, which must be either soldered directly to a drain-copper pour (electrically active) or mounted on an isolated heatsink using insulating thermal pads. Electrical isolation between drain and PCB ground is achieved only via layout separation or insulated mounting hardware.
IPB60R280P6ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ P6
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1190 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
IPB60R280P6ATMA1 FAQ
1.How can I place an order for IPB60R280P6ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB60R280P6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB60R280P6ATMA1 reliable?
The price and inventory of IPB60R280P6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R280P6ATMA1 is usually 5 days.
3.What payment methods are accepted for IPB60R280P6ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R280P6ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB60R280P6ATMA1?
IPB60R280P6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB60R280P6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB60R280P6ATMA1?
For technical support, including IPB60R280P6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R280P6ATMA1 requirements.
6.How does Aetrix verify that IPB60R280P6ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPB60R280P6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R280P6ATMA1 meets industry standards.
7.What is the process for return or replacement of IPB60R280P6ATMA1?
All IPB60R280P6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R280P6ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB60R280P6ATMA1 part is unused and in its original packaging.
Return procedure for IPB60R280P6ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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