Infineon Technologies IPB65R041CFD7ATMA1

Overview

IPB65R041CFD7ATMA1 from Infineon is a 650 V superjunction MOSFET in D²PAK (PG-TO263-3) package, featuring 41 mΩ max R_DS(on), ultra-fast body diode (d_iF/dt = 1300 A/µs), and optimized for zero-voltage switching topologies including LLC and phase-shift full-bridge converters in server power supplies and EV charging stations.

For engineers reviewing the IPB65R041CFD7ATMA1 datasheet, IPB65R041CFD7ATMA1 pinout, IPB65R041CFD7ATMA1 application, or IPB65R041CFD7ATMA1 equivalent, key selection criteria include hard commutation ruggedness, E_oss = 14.0 µJ at 400 V, Q_g = 102 nC, thermal resistance R_thJC = 0.55 °C/W, and JEDEC industrial qualification status.

Technical Context

This CoolMOS™ CFD7 device implements a charge-compensated superjunction structure with integrated fast-recovery body diode (t_rr = 177–265.5 ns, Q_rr = 1.2–2.4 µC), enabling robust hard-switching capability while maintaining low conduction and switching losses. Its gate plateau voltage of 5.7 V and low C_iss (4975 pF) support stable gate drive in high-frequency resonant converters.

The MOSFET delivers 211 A pulsed drain current and 227 W power dissipation at T_C = 25°C, with thermal performance validated across -55°C to +150°C junction temperature range. Its d_v/dt ruggedness (120 V/ns) and reverse diode d_iF/dt rating ensure reliable operation in asymmetric half-bridge and synchronous rectification configurations.

Key Specifications

Pinout & Package

IPB65R041CFD7ATMA1 uses PG-TO263-3 (D²PAK) package with exposed drain tab for thermal and electrical connection. The plastic body provides creepage/clearance compliant with industrial isolation requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V superjunction MOSFET applications.

Compared with IPB65R041CFD7ATMA1, the IPB65R045CFD7 trades 10% higher R_DS(on) for reduced gate charge and enhanced hard-switching immunity, while the IPP65R041CFD7 sacrifices thermal capability for lower assembly cost-neither offers drop-in replacement without layout or thermal redesign.

Availability

IPB65R041CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified reliability, and high power density design support.

Supply support for IPB65R041CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency resonant and soft-switching power conversion in industrial SMPS, data center infrastructure, and electric vehicle charging systems.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A 3.3 Ω gate resistor is validated in the datasheet for 400 V, 24.8 A switching tests. For ZVS in LLC converters above 300 kHz, values between 2.2 Ω and 4.7 Ω balance turn-on speed and ringing suppression. Higher values (>6.8 Ω) risk incomplete turn-on during short dead times and increase switching loss.

Can IPB65R041CFD7ATMA1 be paralleled without external gate ferrite beads?

No-Infineon explicitly recommends gate ferrite beads or separate totem-pole drivers for paralleling. Without them, mismatched gate loop inductance causes current imbalance and localized thermal runaway, especially under hard commutation conditions where d_iF/dt exceeds 1000 A/µs.

How does its body diode performance compare to standard silicon MOSFETs in phase-shift full-bridge?

This device achieves 1300 A/µs d_iF/dt and 177 ns t_rr, outperforming standard 650 V MOSFETs (typically 300–500 A/µs, 350–500 ns). That enables clean zero-current switching during lagging-leg commutation, eliminating snubber losses and reducing EMI filter size by up to 40%.

Is the drain tab electrically isolated from the PCB mounting surface?

No-the drain tab is internally connected to Pin 2 (Drain) and must be electrically isolated from the heatsink using insulating thermal pads or ceramic washers. The package has no internal isolation; creepage and clearance rely on external PCB layout and mechanical mounting design.