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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB65R075CFD7AATMA1

Name: IPB65R075CFD7AATMA1
Brand: Infineon Technologies
SKU: IPB65R075CFD7AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB65R075CFD7AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R075CFD7AATMA1.pdf

Description:: AUTOMOTIVE_COOLMOS PG-TO263-3

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Product details

Overview

IPB65R075CFD7AATMA1 from Infineon is a 650 V, 75 mΩ automotive-qualified Superjunction MOSFET in D²PAK (PG-TO263-3) package with integrated fast body diode, ultra-low Q_rr (0.86 µC), and 1300 A/µs di_F/dt capability-designed for high-efficiency PFC and resonant DC-DC stages in on-board chargers and bidirectional converters.

For engineers reviewing the IPB65R075CFD7AATMA1 datasheet, IPB65R075CFD7AATMA1 pinout, IPB65R075CFD7AATMA1 application, or IPB65R075CFD7AATMA1 equivalent, key selection criteria include R_DS(on) × Q_g FOM (4.5 nC·Ω), E_oss at 400 V (8.8 µJ), avalanche ruggedness (164 mJ), and AEC-Q101 qualification for automotive power systems.

Technical Context

This CoolMOS™ CFD7A device implements a charge-compensated superjunction structure enabling low conduction loss while maintaining high dv/dt ruggedness (120 V/ns) and robust unclamped inductive switching. Its integrated fast-recovery body diode (t_rr = 156 ns, Q_rr = 0.86 µC) eliminates need for external anti-parallel diodes in ZVS phase-shift full-bridge and LLC topologies.

The MOSFET features gate plateau voltage of 5.7 V and total gate charge of 68 nC at V_GS = 0–10 V, supporting precise timing control in high-frequency (>100 kHz) switching applications. Thermal resistance R_thJC is 0.73 °C/W, enabling 171 W power dissipation at T_C = 25 °C with validated 150 °C maximum junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports DC-link voltages up to 475 V in automotive battery systems with margin for transient overvoltage
R_DS(on), max	75 mΩ at T_j = 150 °C - ensures low conduction loss in high-current PFC and DC-DC primary switches
Q_g, typ	68 nC - enables efficient gate drive design with moderate driver IC requirements at >100 kHz operation
E_oss @ 400 V	8.8 µJ - reduces turn-off energy loss and improves efficiency in hard-switched and resonant topologies
di_F/dt	1300 A/µs - allows fast commutation in synchronous rectification and bidirectional power flow without oscillation
I_D,pulse	139 A - supports peak current handling during transient load steps in on-board charger boost stages
Avalanche energy E_AS	164 mJ - provides single-pulse ruggedness for reliable operation under inductive fault conditions

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, with exposed drain tab for thermal enhancement and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires <5.3 Ω series resistance for optimal switching behavior per datasheet test condition
Pin 2 (Drain) + Tab	High-side power terminal	Electrically connected to internal drain and heatsink interface; carries full switched current and must be routed with low-inductance copper pour
Pin 3 (Source)	Reference and return path	Serves as local ground reference for gate drive and current sensing; critical for minimizing common-source inductance in high-di/dt operation

Key Features

Feature	Design Value
Integrated fast body diode	Q_rr = 0.86 µC and t_rr = 156 ns enable zero-voltage switching in LLC without external diode, reducing BOM count and layout area
Ultra-low R_DS(on) × Q_g FOM	4.5 nC·Ω - balances conduction and switching losses for optimal efficiency across light-to-full load in 650 V applications
AEC-Q101 qualified	Validated for automotive-grade reliability including 100% avalanche testing and extended temperature cycling (−40 °C to 150 °C)
Low E_oss and C_oss	E_oss = 8.8 µJ and C_oss = 46 pF reduce capacitive turn-off loss and improve ZVS initiation in phase-shifted full-bridge converters

Applications

On-Board Charger (OBC) Boost Stage

LLC Resonant DC-DC Converter Primary

Use Scenario: High-power AC/DC conversion in electric vehicle OBCs, operating at 30–100 kHz with 400 V nominal DC-link.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in continuous conduction mode (CCM) boost converter, handling up to 11 kW peak power.

Use Value: Low R_DS(on) minimizes conduction loss at high average current; fast body diode enables soft-switching during light-load burst mode.

Use Scenario: Primary-side switch in bi-directional LLC resonant converter for 800 V battery architectures.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration, synchronized with complementary device for ZVS operation above 100 kHz.

Use Value: 1300 A/µs di_F/dt and low Q_rr ensure clean dead-time commutation and reduced ringing, improving EMI and efficiency.

ZVS Phase-Shift Full-Bridge Inverter

Bidirectional DC-DC for Vehicle-to-Grid (V2G)

Use Scenario: Isolated DC-DC stage in fast-charging infrastructure, requiring 95%+ efficiency at 10–50 kW output.

IC Role / Device Role / Timing Role: Bridge arm switch with precise gate timing to maintain zero-voltage turn-on across wide load range.

Use Value: E_oss = 8.8 µJ and low C_oss reduce turn-off loss and extend ZVS window, enabling stable operation down to 10% load.

Use Scenario: Dual-active-bridge (DAB) converter enabling grid-to-vehicle and vehicle-to-grid power transfer.

IC Role / Device Role / Timing Role: Bidirectional switching element in both primary and secondary bridges, requiring symmetrical reverse recovery performance.

Use Value: Matched Q_rr and t_rr between complementary devices minimize circulating current imbalance and thermal stress during direction reversal.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N6F6	R_DS(on) = 65 mΩ, Q_g = 92 nC, no integrated fast diode, TO-247 package	Lacks body diode optimization for resonant topologies; higher switching loss due to larger Q_g	Prefer when cost-sensitive THD mounting is acceptable and ZVS is not required
IXFH60N65X2	R_DS(on) = 65 mΩ, Q_g = 105 nC, E_oss = 14.5 µJ, TO-247 package, no AEC-Q101	Higher E_oss increases turn-off loss; lacks automotive qualification and fast diode integration	Consider only for industrial non-automotive designs where qualification is not mandatory

Compared with STW65N6F6 and IXFH60N65X2, IPB65R075CFD7AATMA1 delivers superior ZVS capability via its 1300 A/µs di_F/dt and 0.86 µC Q_rr, lower E_oss, and AEC-Q101 compliance-making it uniquely suited for automotive OBC and V2G systems demanding high reliability and resonant-mode efficiency.

Availability

IPB65R075CFD7AATMA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC resonant converters, ZVS phase-shift full-bridge inverters, and bidirectional DC-DC systems requiring stable component supply with automotive-grade traceability and long-term lifecycle support.

Supply support for IPB65R075CFD7AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with global manufacturing and quality certification aligned to IATF 16949.

This device belongs to the CoolMOS™ CFD7A product line-engineered specifically for high-efficiency, high-reliability automotive power conversion, emphasizing fast body diode performance, low-loss switching, and AEC-Q101 validation for traction and charging systems.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

The datasheet specifies RG = 5.3 Ω for switching characterization at 400 V and 16.4 A. For ZVS in LLC or phase-shift topologies, RG should be ≤ 4.7 Ω to ensure sufficient gate drive strength and minimize delay mismatch between complementary devices. Higher values risk incomplete turn-on during short dead times and increased switching loss.

Can this MOSFET be used in linear (analog) mode operation?

No-Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'" due to localized thermal runaway risk. It is rated only for switching applications with defined pulse widths and thermal limits.

How does the integrated body diode differ from standard MOSFET body diodes?

This device's body diode is optimized for fast recovery (t_rr = 156 ns, Q_rr = 0.86 µC) and high di_F/dt (1300 A/µs), unlike conventional MOSFET diodes that exhibit slow recovery and high Q_rr. This enables clean commutation in resonant topologies without external diodes and avoids voltage spikes during hard commutation.

Is reflow soldering supported, and what is the MSL rating?

Yes-this D²PAK device supports lead-free reflow soldering at peak temperature up to 260 °C, compliant with JEDEC J-STD-020 MSL Level 1. No floor life limitation applies, and no pre-bake is required before assembly, simplifying manufacturing for automotive production lines.

IPB65R075CFD7AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 16.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 820µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3288 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 171W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R075CFD7AATMA1 FAQ

1.How can I place an order for IPB65R075CFD7AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R075CFD7AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R075CFD7AATMA1 reliable?

The price and inventory of IPB65R075CFD7AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R075CFD7AATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R075CFD7AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R075CFD7AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R075CFD7AATMA1?

IPB65R075CFD7AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R075CFD7AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R075CFD7AATMA1?

For technical support, including IPB65R075CFD7AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R075CFD7AATMA1 requirements.

6.How does Aetrix verify that IPB65R075CFD7AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R075CFD7AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R075CFD7AATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R075CFD7AATMA1?

All IPB65R075CFD7AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R075CFD7AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R075CFD7AATMA1 part is unused and in its original packaging.

Return procedure for IPB65R075CFD7AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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