Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB65R099CFD7AATMA1

Name: IPB65R099CFD7AATMA1
Brand: Infineon Technologies
SKU: IPB65R099CFD7AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB65R099CFD7AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R099CFD7AATMA1.pdf

Description:: MOSFET N-CH 650V 24A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:884

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB65R099CFD7AATMA1 from Infineon is a 650 V, 99 mΩ automotive-qualified Superjunction MOSFET in D²PAK (PG-TO263-3) package with integrated fast-recovery body diode. It delivers ultra-low Q_rr (0.78 µC), low R_DS(on)×Q_g and R_DS(on)×E_oss figures, and supports ZVS phase-shift full-bridge and LLC resonant topologies in on-board chargers and bidirectional DC-DC converters.

For engineers reviewing the IPB65R099CFD7AATMA1 datasheet, IPB65R099CFD7AATMA1 pinout, IPB65R099CFD7AATMA1 application, or IPB65R099CFD7AATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 1300 A/µs di_F/dt capability, 100% avalanche-tested ruggedness, and optimized light-load efficiency for high-voltage battery systems up to 475 V.

Technical Context

This CoolMOS™ CFD7A device uses charge compensation technology with field-stop superjunction structure to achieve high voltage blocking (650 V) and low conduction loss (R_DS(on) ≤ 99 mΩ at T_j = 25°C). Its integrated fast body diode features t_rr = 147 ns and Q_rr = 0.78 µC at 400 V, enabling soft-switching in resonant converters without external diode replacement.

The MOSFET exhibits dv/dt ruggedness of 120 V/ns (low-side) and 70 V/ns (diode reverse recovery), with gate plateau voltage of 5.7 V and total gate charge of 53 nC - parameters directly supporting stable high-frequency operation in PFC and isolated DC-DC stages under demanding thermal and EMI constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Enables direct use in 400–475 V battery systems without series stacking.
R_DS(on), max	99 mΩ @ T_j = 25°C - Delivers low conduction loss in high-current PFC and DC-DC primary switches.
Q_g, typ	53 nC - Supports efficient gate drive design with moderate driver power requirement at >100 kHz switching.
E_oss @ 400 V	6.8 µJ - Reduces turn-off energy loss and enables higher frequency operation in resonant topologies.
di_F/dt	1300 A/µs - Ensures robust commutation in hard- and soft-switched synchronous rectification paths.
t_rr	147 ns - Minimizes reverse recovery overshoot and EMI in high-dV/dt bridge configurations.
T_j max	150 °C - Allows sustained operation in compact, thermally constrained automotive power modules.

Pinout & Package

IPB65R099CFD7AATMA1 is housed in PG-TO263-3 (D²PAK) package with exposed drain tab for enhanced thermal performance. The drain connects directly to the copper tab (Pin 2), enabling low-inductance PCB mounting and efficient heat transfer to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring <5.3 Ω gate resistor for optimal switching behavior per datasheet test conditions.
Pin 2 (Tab)	Drain	Main high-voltage power terminal; electrically connected to exposed metal tab for thermal and electrical conduction.
Pin 3	Source	Reference node for gate drive and current sensing; forms return path for internal body diode conduction.

Key Features

Feature	Design Value
Integrated fast body diode	Q_rr = 0.78 µC and t_rr = 147 ns enable ZVS operation without external diode in LLC half/full-bridge.
AEC-Q101 qualified	Validated for automotive powertrain and charging applications including OBC and DC-DC converters.
Ultra-low FOM (R_DS(on) × Q_g)	5.27 Ω·nC - Balances conduction and switching losses for 100–300 kHz PFC and resonant designs.
100% single-pulse avalanche tested	E_AS = 125 mJ - Guarantees ruggedness against transient overvoltage events in unregulated bus conditions.
Low E_oss	6.8 µJ @ 400 V - Reduces capacitive turn-off loss and improves efficiency in high-frequency soft-switching topologies.

Applications

On-Board Charger (OBC) – AC/DC Stage

Bi-Directional DC-DC Converter – Primary Side

Use Scenario: High-efficiency 6.6 kW AC/DC front-end with interleaved PFC and phase-shift full-bridge isolation.

IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shift full-bridge topology operating at 100–200 kHz with ZVS.

Use Value: Integrated fast diode eliminates need for discrete anti-parallel SiC Schottky, reducing BOM count and layout complexity while maintaining <150 ns t_rr.

Use Scenario: 3.3 kW bi-directional DC-DC stage linking 400 V traction battery and 48 V auxiliary system.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-active-bridge (DAB) configuration with 200 kHz switching.

Use Value: 1300 A/µs di_F/dt rating ensures reliable commutation during zero-voltage transitions without shoot-through risk.

Unidirectional DC-DC Converter – Isolation Stage

Industrial PFC Module – Boost Stage

Use Scenario: 5 kW isolated DC-DC converter for EV auxiliary power unit (APU) with LLC resonant tank.

IC Role / Device Role / Timing Role: Half-bridge leg switch in LLC resonant converter with variable-frequency control.

Use Value: Low E_oss (6.8 µJ) reduces turn-off loss at high frequencies, improving full-load efficiency by ≥0.8% vs. prior CFD2 generation.

Use Scenario: 3.7 kW industrial AC/DC power supply with continuous conduction mode (CCM) boost PFC.

IC Role / Device Role / Timing Role: Main switching device in CCM boost stage operating at 65–100 kHz.

Use Value: 99 mΩ R_DS(on) and 53 nC Q_g enable >98.5% peak efficiency while meeting IEC 61000-3-2 harmonic limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R099CFD7XKSA1	TO-247-3 package; identical R_DS(on), Q_g, and di_F/dt specs; higher P_tot (197 W) due to larger case.	Preferred for high-power industrial PFC where thermal headroom >127 W is required and through-hole assembly is acceptable.	Select when board-level thermal resistance exceeds 0.98 °C/W or forced-air cooling is unavailable.
STP65N6F7	650 V, 0.07 Ω R_DS(on), but no integrated fast diode (Q_rr = 2.1 µC); not AEC-Q101 qualified.	Suitable for cost-sensitive industrial SMPS but unsuitable for automotive ZVS or bidirectional DC-DC where diode speed is critical.	Only consider for non-automotive, non-resonant applications where diode recovery is externally managed.

Compared with IPW65R099CFD7XKSA1 and STP65N6F7, IPB65R099CFD7AATMA1 uniquely combines AEC-Q101 compliance, D²PAK surface-mount compatibility, and sub-1 µC Q_rr - making it the only choice for space-constrained, safety-critical automotive OBC and bi-directional DC-DC modules.

Availability

IPB65R099CFD7AATMA1 is available at Aetrix Electronics and suitable for on-board chargers, bi-directional DC-DC converters, and industrial PFC modules requiring stable component supply, automotive-grade reliability, and surface-mount manufacturability.

Supply support for IPB65R099CFD7AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949 and IATF 16949.

This part belongs to the CoolMOS™ CFD7A product line, engineered specifically for high-efficiency, high-reliability automotive power conversion - emphasizing fast body diode performance, avalanche ruggedness, and seamless integration into resonant and soft-switching topologies.

FAQ

Is IPB65R099CFD7AATMA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'" and requires direct technical consultation with Infineon sales for any such assessment. Its SOA and thermal design are optimized for switching, not analog conduction.

What is the maximum recommended gate resistor value for ZVS operation in an LLC half-bridge?

Based on datasheet test conditions (RG = 5.3 Ω, V_GS = 13 V, I_D = 12.5 A), the maximum recommended gate resistor is 5.3 Ω for reliable ZVS initiation. Higher values increase turn-on delay and reduce di_F/dt margin, risking hard switching and elevated EMI in resonant topologies.

Does the D²PAK package require solder paste stencil optimization for thermal pad reflow?

Yes. The exposed drain tab demands a minimum 75% solder paste coverage area and 0.15 mm stencil thickness per Infineon's application note AN2019-04. Inadequate paste volume causes voiding, increasing R_thJC beyond the rated 0.98 °C/W and risking thermal runaway at >15 A continuous current.

How does the 1300 A/µs di_F/dt rating impact PCB layout in a phase-shift full-bridge?

This rating mandates minimized source inductance: gate loop inductance must stay below 5 nH and source path inductance below 2 nH. Layout best practices include symmetric double-sided source copper pours, Kelvin-source connections, and avoidance of vias in high-di/dt paths to prevent false triggering and oscillation during diode commutation.

IPB65R099CFD7AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7A

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 630µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2513 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 127W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R099CFD7AATMA1 FAQ

1.How can I place an order for IPB65R099CFD7AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R099CFD7AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R099CFD7AATMA1 reliable?

The price and inventory of IPB65R099CFD7AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R099CFD7AATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R099CFD7AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R099CFD7AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R099CFD7AATMA1?

IPB65R099CFD7AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R099CFD7AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R099CFD7AATMA1?

For technical support, including IPB65R099CFD7AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R099CFD7AATMA1 requirements.

6.How does Aetrix verify that IPB65R099CFD7AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R099CFD7AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R099CFD7AATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R099CFD7AATMA1?

All IPB65R099CFD7AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R099CFD7AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R099CFD7AATMA1 part is unused and in its original packaging.

Return procedure for IPB65R099CFD7AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …