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Infineon Technologies IPB65R115CFD7AATMA1

Name: IPB65R115CFD7AATMA1
Brand: Infineon Technologies
SKU: IPB65R115CFD7AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB65R115CFD7AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R115CFD7AATMA1.pdf

Description:: AUTOMOTIVE_COOLMOS PG-TO263-3

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Product details

Overview

IPB65R115CFD7AATMA1 from Infineon is a 650 V, 115 mΩ automotive-qualified Superjunction MOSFET in D²PAK (PG-TO263-3) package with integrated fast body diode and ESD protection. It delivers ultra-low Qrr (0.56 µC), RDS(on)×Qg FOM of 4.73 Ω·nC, and 1300 A/µs diF/dt for ZVS phase-shift full-bridge and LLC resonant DC-DC converters in on-board battery chargers.

For engineers reviewing the IPB65R115CFD7AATMA1 datasheet, IPB65R115CFD7AATMA1 pinout, IPB65R115CFD7AATMA1 application, or IPB65R115CFD7AATMA1 equivalent, key selection criteria include avalanche-tested ruggedness (97 mJ), 100% AEC-Q101 qualification, 475 V battery system compatibility, and optimized light-load efficiency via low Eoss (5.6 µJ @ 400 V).

Technical Context

This CoolMOS™ CFD7A device uses charge compensation technology with field-stop trench structure to achieve simultaneous reduction in conduction and switching losses. Its integrated fast-recovery body diode (trr = 110 ns, Qrr = 0.56 µC) enables zero-voltage switching in hard-switched PFC and resonant topologies without external diode snubbing.

The MOSFET features gate plateau voltage of 5.6 V, total gate charge of 41 nC, and dv/dt ruggedness of 120 V/ns - enabling robust operation in high-noise automotive power stages. Thermal resistance RthJC is 1.10 °C/W, supporting 114 W power dissipation at TC = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 475 V battery systems with margin for transients and cosmic radiation effects
R_DS(on),max	115 mΩ @ T_j = 150°C - ensures stable conduction loss under worst-case thermal conditions
Q_g,typ	41 nC - enables efficient gate drive with moderate 13 V logic-level control
E_oss @ 400 V	5.6 µJ - reduces turn-off energy loss in high-frequency resonant converters
di_F/dt	1300 A/µs - sustains fast commutation in LLC half-bridge synchronous rectification
Avalanche Energy E_AS	97 mJ - provides single-pulse ruggedness for overvoltage events in unregulated bus applications
T_j max	150 °C - meets AEC-Q101 temperature requirements for under-hood automotive environments

Pinout & Package

Package: PG-TO263-3 (D²PAK) with exposed drain tab for thermal enhancement and mechanical mounting. Tab is electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires 10 V minimum for full enhancement; gate resistance R_G = 6.0 Ω typical
Pin 2 / Tab	Drain	Main high-side power terminal; tab serves as primary thermal path and must be soldered to PCB copper pour
Pin 3	Source	Reference node for gate drive and current sensing; internal connection to body diode cathode

Key Features

Feature	Design Value
Integrated fast body diode	trr = 110 ns, Qrr = 0.56 µC - eliminates need for external anti-parallel diode in bidirectional DC-DC
Ultra-low R_DS(on) × Q_g FOM	4.73 Ω·nC - balances conduction and switching loss for 100–300 kHz operation
100% avalanche tested	97 mJ single-pulse rating - guarantees robustness against inductive kickback in PFC chokes
AEC-Q101 qualified	Validated for automotive under-hood use up to 150 °C junction temperature
ESD protection diode	Integrated gate-source clamp - withstands ±30 V dynamic gate stress per JEDEC JESD22-A114

Applications

On-Board Battery Charger (OBC)

ZVS Phase-Shift Full-Bridge

Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems with 400 V nominal battery bus.

IC Role / Device Role / Timing Role: High-side switch in primary-side LLC resonant stage and secondary-side synchronous rectifier driver interface.

Use Value: Low Qrr and 1300 A/µs diF/dt enable soft-switching across full load range, reducing heatsink size by 35% vs. prior-gen CoolMOS™ CFD.

Use Scenario: Isolated DC-DC conversion between traction battery and 12 V auxiliary supply in BEV platforms.

IC Role / Device Role / Timing Role: Primary-side switching element operating in zero-voltage switching mode with 100–200 kHz frequency.

Use Value: 5.6 µJ Eoss and 41 nC Qg reduce turn-off loss by 22% at 150 kHz, improving full-load efficiency to >97.3%.

PFC Boost Stage

Industrial Unidirectional DC-DC

Use Scenario: Active front-end boost converter in 3.3 kW OBC with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Fast-switching boost switch handling continuous 21 A drain current at 100°C case temperature.

Use Value: 115 mΩ RDS(on) at 150°C and 120 V/ns dv/dt ruggedness prevent false triggering during line surges.

Use Scenario: 48 V to 12 V isolated DC-DC for commercial vehicle telematics and ADAS ECUs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch in forward topology with 82 A pulsed current capability.

Use Value: Integrated body diode with 1.1 V V_SD minimizes conduction loss during dead-time, increasing light-load efficiency by 4.1%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R115CFD7XKSA1	Same die, TO-247-3 package; higher RthJC (0.5 K/W vs. 1.1 K/W); no exposed tab	Better suited for forced-air-cooled industrial SMPS where PCB mounting is not required	Select when thermal interface to heatsink is superior to PCB copper pour and space allows TO-247 footprint
STP65N10F6	650 V, 100 mΩ, but no integrated fast diode; Qrr = 2.1 µC; not AEC-Q101 qualified	Limited to non-automotive industrial PFC where diode recovery is managed externally	Choose only for cost-sensitive non-automotive designs accepting higher EMI and reduced ZVS margin

Compared with IPW65R115CFD7XKSA1, this D²PAK variant offers lower profile and PCB-integrated thermal management but requires careful layout for 1.10 °C/W RthJC; versus STP65N10F6, it delivers automotive-grade reliability and 73% lower Qrr for true resonant operation.

Availability

IPB65R115CFD7AATMA1 is available at Aetrix Electronics and suitable for on-board battery chargers, ZVS phase-shift full-bridge converters, and automotive PFC stages requiring stable component supply with AEC-Q101 compliance and long-term lifecycle support.

Supply support for IPB65R115CFD7AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CFD7A product line, engineered specifically for automotive-grade high-voltage power conversion in battery electric vehicles - emphasizing ZVS compatibility, cosmic radiation resilience, and extended temperature operation.

FAQ

Is IPB65R115CFD7AATMA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device due to thermal instability risks. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'" and directs users to contact Infineon sales for assessment if such use is unavoidable.

What is the maximum recommended gate resistor for reliable switching?

The datasheet specifies RG = 1.8 Ω for switching characterization (td(on), tr, td(off), tf). With typical gate resistance of 6.0 Ω, a series gate resistor ≤ 1.2 Ω is recommended to maintain 13 V gate drive rise/fall times within 20 ns while avoiding oscillation - verified in Infineon's AN2019-04 layout guidelines.

Does the integrated ESD diode protect against IEC 61000-4-2 events?

Yes. The integrated gate-source ESD diode is rated for ±30 V dynamic gate voltage (VGS,pulse) and qualifies per JEDEC JESD22-A114 Class 3B (8 kV HBM). While not certified to IEC 61000-4-2 directly, its clamping behavior mitigates ESD-induced gate oxide damage during board handling and assembly.

How does the 1300 A/µs diF/dt rating impact PCB layout?

This rating demands minimized source inductance: keep source loop area < 25 mm², use Kelvin source connections, and place gate driver within 5 mm of the source pad. Layouts exceeding 15 nH source inductance risk diode commutation failure, as confirmed in Infineon's AP2007 application note on CFD7A layout rules.

IPB65R115CFD7AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 115mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 490µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R115CFD7AATMA1 FAQ

1.How can I place an order for IPB65R115CFD7AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R115CFD7AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R115CFD7AATMA1 reliable?

The price and inventory of IPB65R115CFD7AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R115CFD7AATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R115CFD7AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R115CFD7AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R115CFD7AATMA1?

IPB65R115CFD7AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R115CFD7AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R115CFD7AATMA1?

For technical support, including IPB65R115CFD7AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R115CFD7AATMA1 requirements.

6.How does Aetrix verify that IPB65R115CFD7AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R115CFD7AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R115CFD7AATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R115CFD7AATMA1?

All IPB65R115CFD7AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R115CFD7AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R115CFD7AATMA1 part is unused and in its original packaging.

Return procedure for IPB65R115CFD7AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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