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Infineon Technologies IPB65R145CFD7AATMA1

Name: IPB65R145CFD7AATMA1
Brand: Infineon Technologies
SKU: IPB65R145CFD7AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB65R145CFD7AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R145CFD7AATMA1.pdf

Description:: AUTOMOTIVE_COOLMOS PG-TO263-3

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Product details

Overview

IPB65R145CFD7AATMA1 from Infineon is a 650 V, 145 mΩ automotive-qualified Superjunction MOSFET in D²PAK (PG-TO263-3) package, featuring integrated fast body diode, ultra-low Q_rr (0.52 µC), and 100% avalanche tested ruggedness. It delivers optimized performance in PFC and ZVS phase-shift full-bridge topologies for on-board chargers and bidirectional DC-DC converters operating up to 475 V battery systems.

For engineers reviewing the IPB65R145CFD7AATMA1 datasheet, IPB65R145CFD7AATMA1 pinout, IPB65R145CFD7AATMA1 application, or IPB65R145CFD7AATMA1 equivalent, key selection criteria include R_DS(on) × Q_g FOM (36 nC gate charge), E_oss (4.7 µJ @ 400 V), di_F/dt capability (1300 A/µs), and AEC-Q101 qualification for automotive power conversion stages.

Technical Context

This CoolMOS™ CFD7A device employs charge compensation technology with an integrated fast-recovery body diode (t_rr = 104 ns, Q_rr = 0.52 µC) and enhanced dv/dt ruggedness (120 V/ns). Its low R_DS(on) × E_oss and R_DS(on) × Q_g figures enable high-frequency resonant switching in LLC and phase-shifted full-bridge circuits without compromising light-load efficiency.

The MOSFET supports unidirectional and bidirectional operation in 400–475 V DC-link applications, with thermal resistance R_thJC = 1.27 °C/W and maximum junction temperature of 150 °C. Gate plateau voltage is 5.8 V, and it is rated for pulsed drain current up to 72 A at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC-link voltages up to 475 V with margin for transients and cosmic radiation effects in automotive systems.
R_DS(on), max	145 mΩ @ T_j = 25 °C - Enables low conduction loss in high-current PFC and DC-DC primary switches.
Q_g, typ	36 nC @ V_DD = 400 V - Low gate drive energy reduces driver losses and enables efficient 100–300 kHz switching.
E_oss	4.7 µJ @ 400 V - Minimizes turn-off energy loss in hard- and soft-switching topologies.
di_F/dt	1300 A/µs - Supports fast commutation in synchronous rectification and resonant converter freewheeling paths.
t_rr	104 ns @ dI_F/dt = 100 A/µs - Reduces reverse recovery stress and EMI in high-frequency bridge legs.
T_j, max	150 °C - Rated for continuous operation in under-hood automotive environments with proper heatsinking.

Pinout & Package

IPB65R145CFD7AATMA1 is housed in PG-TO263-3 (D²PAK) package with exposed drain tab for thermal and electrical connection. The package features surface-mount compatibility, MSL1 reflow rating (260 °C peak), and mechanical robustness for automotive vibration environments.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; requires gate driver with ≥ ±30 V rating due to dynamic V_GS,pulse spec.
Pin 2 (Drain) + Tab	High-side power node	Tab is electrically connected to Drain; must be soldered to PCB copper pour for thermal and current path integrity.
Pin 3 (Source)	Reference return	Serves as local ground reference for gate drive and current sensing; connects to low-side switch source or shunt resistor.

Key Features

Feature	Design Value
Integrated fast body diode	Q_rr = 0.52 µC, t_rr = 104 ns - Eliminates need for external anti-parallel diode in half-bridge LLC resonant tanks.
AEC-Q101 qualified	Validated for automotive powertrain and charging systems - meets stress test requirements including HTGB, HTRB, and UIS.
Ultra-low figure-of-merit	R_DS(on) × Q_g = 5.22 Ω·nC - Enables higher efficiency than prior CFD generations at same R_DS(on).
100% single-pulse avalanche tested	E_AS = 85 mJ @ I_AS = 4.1 A - Guarantees ruggedness against inductive switching surges without derating.
Low E_oss	4.7 µJ @ 400 V - Reduces turn-off loss by >30% vs. standard SJ MOSFETs in 200–300 kHz ZVS designs.

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Boost PFC front-end in 11 kW bi-directional OBC converting AC grid to 400–475 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost topology, switching at 65–100 kHz.

Use Value: Low Q_rr and fast di_F/dt minimize body diode conduction loss during zero-voltage switching transitions, improving light-load efficiency by ~1.2%.

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter stepping down 400 V DC to 400 V HV battery or 12 V LV bus.

IC Role / Device Role / Timing Role: Half-bridge primary switch operating in ZVS region with 200–300 kHz fundamental frequency.

Use Value: Ultra-low E_oss (4.7 µJ) and low C_oss (25 pF) reduce turn-off loss and improve ZVS range, enabling >97% peak efficiency.

Bidirectional DC-DC for Vehicle-to-Grid (V2G)

Unidirectional DC-DC for 48 V Mild Hybrid Systems

Use Scenario: Dual-active-bridge (DAB) converter enabling power flow between 400 V traction battery and 400 V grid interface.

IC Role / Device Role / Timing Role: Bidirectional switch in DAB primary and secondary bridges, requiring symmetrical conduction and reverse recovery behavior.

Use Value: Matched forward/reverse characteristics and 1300 A/µs di_F/dt support precise phase-shift control and minimize circulating current loss during power reversal.

Use Scenario: Step-down converter supplying 48 V auxiliary loads (e.g., e-turbo, ADAS ECUs) from 400 V traction battery.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in phase-shifted full-bridge topology operating at 150 kHz.

Use Value: AEC-Q101 qualification and 150 °C T_j,max ensure reliability in engine bay mounting locations with ambient temperatures up to 105 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095CFD7	R_DS(on) = 95 mΩ, Q_g = 48 nC, same package and AEC-Q101 rating	Higher conduction loss margin but increased gate drive loss; suited for lower-frequency (<100 kHz) PFC where thermal headroom exists	Select when system prioritizes R_DS(on) over switching loss and gate drive complexity is acceptable.
STP65N6F7	650 V, 65 mΩ, non-automotive, no integrated fast diode, Q_rr ≈ 2.1 µC	Lacks AEC-Q101 and fast body diode; requires external SiC Schottky for resonant topologies	Only suitable for cost-sensitive industrial PFC where automotive qualification and ZVS operation are not required.

Compared with IPW65R095CFD7 and STP65N6F7, IPB65R145CFD7AATMA1 offers the optimal balance of conduction loss, switching loss, and automotive compliance - delivering lowest total power loss in 100–300 kHz resonant DC-DC and bidirectional OBC stages.

Availability

IPB65R145CFD7AATMA1 is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and automotive PFC stages requiring stable component supply, AEC-Q101 compliance, and high-reliability power switching under 150 °C junction conditions.

Supply support for IPB65R145CFD7AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to the CoolMOS™ CFD7A product line, engineered specifically for high-efficiency, high-reliability automotive power conversion - emphasizing low-loss resonant switching, integrated body diode performance, and robustness across extended temperature and voltage ranges.

FAQ

Is IPB65R145CFD7AATMA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'." Thermal runaway risk and undefined SOA in analog conduction make it unsuitable for constant-current or voltage-regulation applications outside switching boundaries.

What is the maximum recommended gate resistor for reliable ZVS in LLC converters?

Based on typical gate charge (Q_g = 36 nC) and plateau voltage (5.8 V), a gate resistor of 10.2 Ω was used in characterization (Table 9). For 200–300 kHz operation, R_G = 8–12 Ω balances switching speed and ringing suppression; values below 6 Ω increase EMI risk without meaningful ZVS improvement.

Does the integrated body diode eliminate need for external freewheeling diodes in half-bridge configurations?

Yes - in resonant topologies like LLC and phase-shifted full-bridge, the integrated fast body diode (t_rr = 104 ns, Q_rr = 0.52 µC) replaces discrete Si or SiC freewheeling diodes. However, layout must minimize source inductance to avoid voltage overshoot during diode commutation.

How does cosmic radiation affect IPB65R145CFD7AATMA1 in 475 V battery systems?

For blocking voltages >475 V, Infineon requires early design-phase evaluation of single-event burnout (SEB) from cosmic radiation. Customers must contact Infineon sales for radiation-hardened layout guidance and test data - no built-in SEB mitigation is specified in the datasheet.

IPB65R145CFD7AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 420µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1694 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 98W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R145CFD7AATMA1 FAQ

1.How can I place an order for IPB65R145CFD7AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R145CFD7AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R145CFD7AATMA1 reliable?

The price and inventory of IPB65R145CFD7AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R145CFD7AATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R145CFD7AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R145CFD7AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R145CFD7AATMA1?

IPB65R145CFD7AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R145CFD7AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R145CFD7AATMA1?

For technical support, including IPB65R145CFD7AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R145CFD7AATMA1 requirements.

6.How does Aetrix verify that IPB65R145CFD7AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R145CFD7AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R145CFD7AATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R145CFD7AATMA1?

All IPB65R145CFD7AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R145CFD7AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R145CFD7AATMA1 part is unused and in its original packaging.

Return procedure for IPB65R145CFD7AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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