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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB65R150CFDAATMA1

Name: IPB65R150CFDAATMA1
Brand: Infineon Technologies
SKU: IPB65R150CFDAATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB65R150CFDAATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R150CFDAATMA1.pdf

Description:: MOSFET N-CH 650V 22.4A D2PAK

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Product details

Overview

IPB65R150CFDAATMA1 from Infineon Technologies is an AEC-Q101-qualified 650 V, 22.4 A (T_C = 25°C) automotive-grade N-channel CoolMOS™ CFDA superjunction MOSFET in D²PAK (PG-TO263) package, featuring R_DS(on) = 0.15 Ω (max), Q_g = 86 nC (typ), and ultra-fast body diode with t_rr = 140 ns - designed for resonant LLC and ZVS-PWM stages in on-board chargers and DC-DC converters.

For engineers reviewing the IPB65R150CFDAATMA1 datasheet, IPB65R150CFDAATMA1 pinout, IPB65R150CFDAATMA1 application, or IPB65R150CFDAATMA1 equivalent, key selection criteria include commutation ruggedness (di/dt = 900 A/µs), low E_oss (6.8 µJ @ 400 V), AEC-Q101 qualification, RoHS/halogen-free packaging, and thermal resistance R_thJC = 0.64 K/W.

Technical Context

This device implements Infineon's CoolMOS™ CFDA superjunction architecture optimized for high-frequency resonant topologies. It delivers a figure-of-merit (FOM) of R_DS(on) × Q_g = 12.9 Ω·nC and E_oss = 6.8 µJ at 400 V - enabling reduced switching losses and improved ZVS behavior in 100–500 kHz power stages.

The integrated body diode exhibits tightly controlled reverse recovery (Q_rr = 0.7 µC, I_rrm = 8.8 A) and high di/dt capability (900 A/µs), supporting robust hard- and soft-switched operation without external snubbers in automotive bidirectional DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V bus designs with ≥1.6× voltage margin for transient overvoltage in 48 V/400 V hybrid systems
R_DS(on), max	0.15 Ω - enables <22.4 A continuous conduction at T_C = 25°C with ≤75 W conduction loss
Q_g, typ	86 nC - determines gate drive energy requirement (~1.1 mJ @ 13 V) and influences switching speed control
E_oss @ 400 V	6.8 µJ - directly reduces turn-on loss in ZVS circuits and improves efficiency above 200 kHz
t_rr	140 ns - ensures clean commutation in phase-shifted full-bridge topologies with minimal voltage overshoot
di/dt rating	900 A/µs - guarantees reliable operation under fast current reversal in synchronous rectification and bidirectional power flow
R_thJC	0.64 K/W - allows 195.3 W power dissipation at T_C = 25°C, supporting compact heatsink integration

Pinout & Package

IPB65R150CFDAATMA1 is housed in a surface-mount D²PAK (PG-TO263) package with standard three-terminal layout and exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V gate drive to fully enhance channel; R_G = 1.5 Ω limits ringing and optimizes switching speed
Pin 2 (Drain)	High-side power output	Connected to HV bus; electrically tied to exposed copper pad for low-inductance, high-current return path
Pin 3 (Source)	Power reference / return	Serves as local ground reference for gate driver; requires low-impedance PCB routing to minimize noise coupling

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 140 ns, Q_rr = 0.7 µC - eliminates need for external SiC Schottky anti-parallel diodes in 300–500 kHz LLC converters
High commutation ruggedness	di/dt = 900 A/µs - sustains repeated hard-commutation events in automotive traction DC-DC without failure
Low-loss FOM	R_DS(on) × Q_g = 12.9 Ω·nC - balances conduction and switching losses for peak efficiency at 250 kHz
AEC-Q101 qualified	Tested per stress conditions including HTGB, HTRB, UHAST, and temperature cycling - validated for 15-year automotive life

Applications

On-Board Charger (OBC)

48 V–400 V Bidirectional DC-DC

Use Scenario: High-efficiency AC/DC + isolated DC/DC stage in EV OBC converting grid AC to 400 V battery bus.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC half-bridge, operating at 250–350 kHz with ZVS.

Use Value: Low E_oss and fast body diode enable >97% peak efficiency and eliminate external diode, reducing BOM count by one component.

Use Scenario: Dual-active-bridge (DAB) converter linking 48 V mild-hybrid rail and 400 V main battery in PHEVs.

IC Role / Device Role / Timing Role: High-side switch in DAB leg, handling bidirectional 6 kW power flow with soft-switching across full load range.

Use Value: 900 A/µs di/dt rating ensures reliable zero-current switching during polarity reversal, preventing shoot-through risk.

Server PSU (80 PLUS Titanium)

Solar Microinverter DC-Link

Use Scenario: Primary-side switch in high-density 3.3 kW server power supply using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Fast-switching HV MOSFET in 300 kHz PWM stage, driving transformer primary with tight duty-cycle control.

Use Value: 0.15 Ω R_DS(on) and 86 nC Q_g reduce total losses to <15 W at full load, meeting Titanium efficiency requirements at 50°C ambient.

Use Scenario: DC-link switch in 1.2 kW solar microinverter interfacing PV panel to H-bridge inverter stage.

IC Role / Device Role / Timing Role: Unidirectional HV switch in boost converter pre-regulator, operating at 120 kHz with 650 V blocking.

Use Value: AEC-Q101 qualification ensures long-term reliability under outdoor thermal cycling (-40°C to +85°C), extending field lifetime beyond 25 years.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R150CFDA	TO-247 package, identical electrical specs, higher R_thJC = 0.64 K/W but larger footprint and through-hole mounting	Better suited for forced-air-cooled industrial PSUs where mechanical stability outweighs board space constraints	Select when thermal interface to heatsink is superior and manual assembly is acceptable
IPP65R150CFDA	TO-220 package, same R_DS(on) and Q_g, but lower P_tot = 125 W and higher R_thJA = 62 K/W	Targeted at cost-sensitive, lower-power (<1 kW) consumer adapters and lighting drivers with natural convection cooling	Select only for non-automotive, non-resonant applications with derated current (≤12 A continuous)

Compared with IPW65R150CFDA and IPP65R150CFDA, IPB65R150CFDAATMA1 offers optimal balance of surface-mount compatibility, automotive qualification, and thermal performance - making it the preferred choice for space-constrained, high-reliability resonant converters requiring AEC-Q101 compliance.

Availability

IPB65R150CFDAATMA1 is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and server power supplies requiring stable component supply, automotive-grade traceability, and long-lifecycle support.

Supply support for IPB65R150CFDAATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

The CoolMOS™ CFDA series was developed specifically for high-frequency resonant and soft-switching power conversion in automotive and industrial applications - emphasizing ruggedness, low E_oss, and AEC-Q101 compliance.

FAQ

What is the maximum continuous drain current for IPB65R150CFDAATMA1 at 100°C case temperature?

The maximum continuous drain current is 14.2 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This derating reflects thermal limitations of the D²PAK package under sustained high-temperature operation and must be verified against actual PCB layout and heatsinking in the target application.

Does IPB65R150CFDAATMA1 require a negative gate turn-off voltage?

No - the device operates reliably with 0 V to 10 V gate drive and does not require negative turn-off bias. Its gate threshold voltage (V_GS(th)) is 3.5–4.5 V, and gate-source voltage rating is ±20 V (static), allowing standard unipolar gate drivers without level-shifting complexity.

Can IPB65R150CFDAATMA1 replace older CoolMOS™ C3 or C7 devices in existing designs?

Yes - it is a direct drop-in replacement for IPB65R150C3 and IPB65R150C7 in D²PAK packages, offering lower R_DS(on) × Q_g, faster body diode, and AEC-Q101 qualification. Layout and gate drive remain unchanged, but system-level validation of EMI and thermal performance is recommended due to improved switching speed.

What is the significance of the "CFDA" suffix in the part number?

The "CFDA" designation identifies Infineon's fourth-generation CoolMOS™ technology optimized for resonant and soft-switching topologies. It denotes enhanced body diode performance (t_rr ≤ 140 ns), improved commutation ruggedness (di/dt ≥ 900 A/µs), and tighter parameter distribution versus prior C3/C7 generations - all validated under automotive stress conditions.

IPB65R150CFDAATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 195.3W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R150CFDAATMA1 FAQ

1.How can I place an order for IPB65R150CFDAATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R150CFDAATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R150CFDAATMA1 reliable?

The price and inventory of IPB65R150CFDAATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R150CFDAATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R150CFDAATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R150CFDAATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R150CFDAATMA1?

IPB65R150CFDAATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R150CFDAATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R150CFDAATMA1?

For technical support, including IPB65R150CFDAATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R150CFDAATMA1 requirements.

6.How does Aetrix verify that IPB65R150CFDAATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R150CFDAATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R150CFDAATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R150CFDAATMA1?

All IPB65R150CFDAATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R150CFDAATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R150CFDAATMA1 part is unused and in its original packaging.

Return procedure for IPB65R150CFDAATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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