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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB65R150CFDATMA2

Name: IPB65R150CFDATMA2
Brand: Infineon Technologies
SKU: IPB65R150CFDATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB65R150CFDATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R150CFDATMA2.pdf

Description:: MOSFET N-CH 650V 22.4A TO263-3

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Product details

Overview

IPB65R150CFDATMA2 from Infineon Technologies is a 650 V, 22.4 A (T_C = 100 °C), 0.15 Ω R_DS(on) D²PAK-packaged CoolMOS™ CFD2 superjunction MOSFET with ultra-fast body diode (t_rr = 140 ns, Q_rr = 0.7 µC) and low gate charge (Q_g = 86 nC), designed for resonant LLC and ZVS-PWM stages in high-efficiency server PSUs and telecom rectifiers.

For engineers reviewing the IPB65R150CFDATMA2 datasheet, IPB65R150CFDATMA2 pinout, IPB65R150CFDATMA2 application, or IPB65R150CFDATMA2 equivalent, key selection criteria include body diode ruggedness (di/dt = 900 A/µs), E_oss = 6.8 µJ at 400 V, thermal resistance R_thJC = 0.64 °C/W, and industrial-grade JEDEC qualification.

Technical Context

This CoolMOS™ CFD2 device implements a superjunction architecture optimized for zero-voltage switching topologies. Its integrated ultra-fast body diode eliminates need for external SiC/Schottky anti-parallel diodes in resonant converters, while its low R_DS(on) × Q_g figure-of-merit (FOM) reduces both conduction and switching losses simultaneously.

The MOSFET supports hard-switched and soft-switched operation up to 1 MHz, with verified dv/dt ruggedness of 50 V/ns and avalanche energy rating of 614 mJ (single pulse). Gate plateau voltage is fixed at 6.4 V, enabling stable drive with standard 12 V gate drivers without overdrive risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Rated blocking voltage for primary-side switching in 400 V DC bus applications (e.g., telecom rectifiers, server PSUs).
R_DS(on), max	0.15 Ω @ T_J = 25 °C - Enables <2.2 W conduction loss at 12 A RMS, critical for thermally constrained SMD layouts.
Q_g, typ	86 nC - Low gate charge reduces driver power demand and enables efficient 500 kHz–1 MHz operation with minimal gate-drive loss.
E_oss @ 400 V	6.8 µJ - Low output capacitance energy minimizes turn-on switching loss in ZVS circuits, improving full-load efficiency.
t_rr	140 ns - Ultra-fast reverse recovery enables reliable commutation in LLC half-bridge without voltage spikes or shoot-through risk.
di/dt (body diode)	900 A/µs - High commutation ruggedness supports high-frequency resonant transitions without failure under dynamic load steps.
R_thJC	0.64 °C/W - Low junction-to-case thermal resistance allows >195 W power dissipation with proper heatsinking, typical for TO-247-equivalent performance in D²PAK.

Pinout & Package

IPB65R150CFDATMA2 is housed in a surface-mount D²PAK (PG-TO263-3) package with standard 3-pin layout: drain on exposed pad (pin 2), gate on lead 1, source on lead 3. The package supports reflow soldering per MSL 1 and delivers thermal performance comparable to TO-247 in compact footprint.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal requiring ≤10 V drive; R_G = 1.5 Ω ensures fast, damped switching transitions.
Pin 2 (Drain)	High-voltage power node	Connected to internal die drain and exposed copper pad - must be routed to high-current, low-inductance HV trace or heatsink plane.
Pin 3 (Source)	Reference return path	Common source node for gate drive and current sensing; requires low-inductance connection to power ground to avoid ringing.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 140 ns, Q_rr = 0.7 µC - Eliminates need for external diode in LLC synchronous rectification, reducing BOM count and layout area.
High commutation ruggedness	di/dt = 900 A/µs - Withstands rapid current reversal during ZVS transitions without latch-up or thermal runaway.
Low-loss FOM	R_DS(on) × Q_g = 12.9 Ω·nC - Balances conduction and switching loss for peak efficiency across 20–100% load range.
Industrial qualification	JEDEC J-STD-020 / JESD22 compliant - Validated for 150 °C operation and 1000-cycle temperature cycling, suitable for telecom and server environments.
Pb-free & halogen-free	RoHS-compliant plating and mold compound - Meets IPC-1752A material declaration requirements for global OEM compliance.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for 48 V intermediate bus generation.

IC Role / Device Role / Timing Role: High-side switching element operating at 300–500 kHz with ZVS turn-on enabled by body diode conduction.

Use Value: 0.64 °C/W R_thJC and 6.8 µJ E_oss reduce heatsink size by 35% vs. legacy SJ-MOSFETs while maintaining >96% full-load efficiency.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in -48 V telecom rectifier with 200 kHz switching.

IC Role / Device Role / Timing Role: Main power switch handling 22.4 A continuous current with robust dv/dt immunity during hard commutation.

Use Value: 50 V/ns dv/dt rating and 900 A/µs di/dt capability prevent false triggering and ensure stable operation under lightning surge transients.

LCD TV Backlight Inverter

Solar Microinverter

Use Scenario: Half-bridge switch in resonant inverter driving CCFL or LED backlight arrays (up to 120 W).

IC Role / Device Role / Timing Role: Fast-switching power transistor managing burst-mode dimming and soft-start sequences.

Use Value: 86 nC Q_g enables precise PWM control down to 1% duty cycle without gate-drive distortion or shoot-through risk.

Use Scenario: DC-DC boost stage in single-phase microinverter interfacing PV panels to 230 V AC grid.

IC Role / Device Role / Timing Role: High-efficiency switching element in interleaved boost converter operating at 100–250 kHz.

Use Value: 0.15 Ω R_DS(on) and 140 ns t_rr minimize conduction loss and reverse recovery loss, extending MPPT window by 2.1% at partial shading.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R150CFD	TO-247 package, R_thJC = 0.64 °C/W, identical electrical specs	Requires through-hole mounting and larger PCB area; better suited for forced-air-cooled industrial SMPS	Select when mechanical robustness and higher P_tot (>200 W) are prioritized over board space.
IPP65R150CFD	TO-220 package, R_thJC = 0.64 °C/W, same R_DS(on)/Q_g, but lower I_D,pulse derating	Limited to <150 W continuous dissipation due to higher R_thJA; used in cost-sensitive consumer adapters	Choose for low-cost, non-automotive AC-DC adapters where thermal margin exceeds 25 °C.

Compared with IPW65R150CFD and IPP65R150CFD, IPB65R150CFDATMA2 delivers identical electrical performance in a surface-mount D²PAK package-enabling automated assembly, reduced footprint, and thermal performance matching TO-247-making it optimal for high-density server and telecom power modules.

Availability

IPB65R150CFDATMA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar microinverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IPB65R150CFDATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and wafer fabrication infrastructure.

This part belongs to the CoolMOS™ CFD2 product line-engineered specifically for high-frequency resonant and soft-switching power conversion, targeting efficiency, reliability, and design simplicity in 650 V industrial and telecom power systems.

FAQ

What is the maximum continuous drain current for IPB65R150CFDATMA2 at 100 °C case temperature?

The maximum continuous drain current is 14.2 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating assumes proper PCB copper area (6 cm²) and no airflow, with thermal resistance R_thJC = 0.64 °C/W limiting junction temperature to 150 °C.

Does IPB65R150CFDATMA2 require a negative gate turn-off voltage?

No. The device is fully compatible with 0 V to +12 V or +15 V gate drive. Its gate threshold voltage (V_GS(th)) ranges from 3.5 V to 4.5 V, and gate oxide is rated for ±20 V static and ±30 V AC, eliminating need for negative bias in standard hard- or soft-switching applications.

Can IPB65R150CFDATMA2 replace older CoolMOS™ CFD1 devices in existing designs?

Yes-electrical parameters including R_DS(on), Q_g, E_oss, and t_rr are improved or matched, and pinout/package are identical. However, the CFD2's faster body diode demands verification of gate-drive loop inductance and snubber design to avoid oscillation during diode commutation.

Is the D²PAK package of IPB65R150CFDATMA2 compatible with standard reflow profiles?

Yes. It is qualified for MSL 1 and supports both wave and reflow soldering at 260 °C for 10 seconds (lead-free), per Table 5. Recommended profile follows IPC-J-STD-020D, with peak temperature ≤260 °C and time above 217 °C limited to 60–150 s.

IPB65R150CFDATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 195.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R150CFDATMA2 FAQ

1.How can I place an order for IPB65R150CFDATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R150CFDATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R150CFDATMA2 reliable?

The price and inventory of IPB65R150CFDATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R150CFDATMA2 is usually 5 days.

3.What payment methods are accepted for IPB65R150CFDATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R150CFDATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R150CFDATMA2?

IPB65R150CFDATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R150CFDATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R150CFDATMA2?

For technical support, including IPB65R150CFDATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R150CFDATMA2 requirements.

6.How does Aetrix verify that IPB65R150CFDATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB65R150CFDATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R150CFDATMA2 meets industry standards.

7.What is the process for return or replacement of IPB65R150CFDATMA2?

All IPB65R150CFDATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R150CFDATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R150CFDATMA2 part is unused and in its original packaging.

Return procedure for IPB65R150CFDATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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