Infineon Technologies IPB65R190C7ATMA2

Overview

IPB65R190C7ATMA2 from Infineon Technologies is a 650 V, 190 mΩ superjunction N-channel power MOSFET in the CoolMOS™ C7 family, designed for high-efficiency hard-switching and PFC applications. It delivers 13 A continuous drain current at T_C = 25°C, 49 A pulsed current, and features low gate charge (Q_g = 23 nC) and optimized R_DS(on) × E_oss figure-of-merit for server PSU and telecom rectifier stages.

For engineers reviewing the IPB65R190C7ATMA2 datasheet, IPB65R190C7ATMA2 pinout, IPB65R190C7ATMA2 application, or IPB65R190C7ATMA2 equivalent, key selection criteria include its 700 V V_DS rating at T_j,max, 100 V/ns dv/dt ruggedness, 55 A/µs body diode di/dt capability, and D²PAK package thermal performance for industrial-grade power conversion designs.

Technical Context

This CoolMOS™ C7 device implements a superjunction (SJ) cell architecture enabling lower R_DS(on) per die area and reduced switching losses versus prior generations. Its gate plateau voltage of 5.4 V and low Q_gd/Q_g ratio (7/23 nC) support clean turn-off and robust noise immunity in high-frequency PWM topologies.

The MOSFET integrates an optimized body diode with 830 ns reverse recovery time and 6.5 µC Q_rr at 400 V, supporting ZVS-capable PFC and LLC resonant converters. Thermal resistance R_thJC = 1.73 °C/W enables high-power density mounting on minimal copper footprints.

Key Specifications

Pinout & Package

IPB65R190C7ATMA2 uses the PG-TO263 (D²PAK) surface-mount package with exposed drain tab for enhanced thermal dissipation. The tab serves as the drain terminal and must be soldered to a large copper area for optimal thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW65N60DM6 and IXFH60N60X3, IPB65R190C7ATMA2 offers superior R_DS(on) × Q_g trade-off and verified 100 V/ns dv/dt tolerance-critical for compact, high-density server PSUs where gate drive simplicity and transient immunity directly impact BOM cost and field reliability.

Availability

IPB65R190C7ATMA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and UPS inverters requiring stable component supply, JEDEC-qualified industrial reliability, and consistent thermal performance across production batches.

Supply support for IPB65R190C7ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon and wide-bandgap technologies.

The CoolMOS™ C7 series targets high-efficiency, high-power-density AC-DC and DC-DC conversion in computing, telecom, and renewable energy systems-emphasizing low-loss switching, robust ruggedness, and simplified thermal design.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 10 Ω gate resistor is validated in the datasheet for 400 V V_DD, 5.7 A ID conditions, yielding 11 ns turn-on delay and 54 ns turn-off delay. For 100–200 kHz operation, values between 4.7 Ω and 15 Ω balance switching speed, EMI, and gate driver stress. Higher values increase switching loss but reduce ringing; lower values risk overshoot and driver overheating.

Can IPB65R190C7ATMA2 be paralleled in high-current PFC designs?

Yes, but Infineon explicitly recommends ferrite beads on each gate line or individual totem-pole drivers to suppress oscillation and ensure current sharing. Layout symmetry, matched gate loop inductance, and identical source inductance are critical. The device's positive temperature coefficient of R_DS(on) aids thermal stability during parallel operation.

Is the D²PAK drain tab electrically isolated from the package body?

No-the drain tab is internally connected to Pin 2 and forms the primary drain terminal. It is not insulated and must be mounted on a non-isolated copper pour tied to the high-voltage drain net. Electrical isolation requires external insulation layers (e.g., silicone pad) if mounting to a heatsink shared with other circuits.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the SOA curve limits continuous DC operation to ~6.5 A at 400 V, or 10 A at 200 V. For 10 ms pulses, it supports up to 25 A at 400 V. These boundaries derive from thermal saturation and secondary breakdown limits-not just R_DS(on)-and are graphically defined in Figure 2 and Figure 3 of the datasheet Rev. 2.1.