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Infineon Technologies IPB65R190CFD7AATMA1

Name: IPB65R190CFD7AATMA1
Brand: Infineon Technologies
SKU: IPB65R190CFD7AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB65R190CFD7AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R190CFD7AATMA1.pdf

Description:: MOSFET N-CH 650V 14A TO263-3

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Product details

Overview

IPB65R190CFD7AATMA1 from Infineon is a 650 V, 190 mΩ automotive-qualified Superjunction MOSFET in D²PAK (PG-TO263-3) package with integrated fast body diode and ESD protection. It delivers ultra-low Q_rr (0.46 µC), low gate charge (Q_g = 28 nC), and 100% avalanche tested ruggedness for high-reliability PFC and resonant DC-DC stages in on-board chargers.

For engineers reviewing the IPB65R190CFD7AATMA1 datasheet, IPB65R190CFD7AATMA1 pinout, IPB65R190CFD7AATMA1 application, or IPB65R190CFD7AATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, di_F/dt capability (1300 A/µs), E_oss (3.7 µJ @ 400 V), and AEC-Q101 qualification for automotive power conversion.

Technical Context

This CoolMOS™ CFD7A device employs charge compensation technology to achieve superior figure-of-merit (R_DS(on) × Q_g and R_DS(on) × E_oss) versus prior generations. Its integrated fast body diode enables zero-voltage switching in LLC and phase-shift full-bridge topologies without external diode supplementation.

The MOSFET features 120 V/ns dv/dt ruggedness and 70 V/ns reverse diode dv/dt rating, supporting robust operation in high-noise, high-frequency switching environments. Thermal resistance R_thJC is 1.62 °C/W, enabling high-power density designs with controlled junction-to-case heat transfer.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Rated blocking voltage for 475 V battery systems with margin against transients and cosmic radiation effects.
R_DS(on), max	190 mΩ @ T_j = 150°C - Ensures stable conduction loss under worst-case thermal conditions in automotive OBCs.
Q_g, typ	28 nC - Enables efficient gate drive with low driver power consumption and reduced switching losses at >100 kHz.
E_oss @ 400 V	3.7 µJ - Directly reduces turn-off energy loss in hard-switched and resonant topologies.
di_F/dt	1300 A/µs - Supports fast, controlled body diode commutation in ZVS circuits without oscillation or shoot-through risk.
I_D,pulse	55 A - Sustains peak current during transient load steps in bidirectional DC-DC converters.
T_j max	150 °C - Confirmed AEC-Q101 operating limit for continuous automotive under-hood deployment.

Pinout & Package

IPB65R190CFD7AATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain tab for enhanced thermal performance. The drain connects directly to the copper tab (Pin 2), enabling low-inductance, high-current PCB mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring <10.2 Ω gate resistor for stable 100–300 kHz switching; protected by integrated ESD diode.
Pin 2 (Tab)	Drain	Main high-voltage power terminal; electrically connected to exposed metal tab for direct heatsinking and low R_thJC.
Pin 3	Source	Reference node for gate drive and current sensing; internal connection to body diode cathode and source metallization.

Key Features

Feature	Design Value
Integrated fast body diode	Q_rr = 0.46 µC and t_rr = 97 ns enable soft recovery in resonant converters without external diode.
AEC-Q101 qualification	Validated for automotive-grade reliability including 100% single-pulse avalanche testing (E_AS = 64 mJ).
Low R_DS(on) × Q_g FOM	Optimizes trade-off between conduction and switching loss-critical for >96% efficiency in 3.3–22 kW OBCs.
High di_F/dt rating	1300 A/µs supports rapid current reversal in synchronous rectification and bidirectional power flow control.
Reflow-compatible MSL1	Rated for 260 °C peak reflow profile, ensuring robust assembly in automated SMT lines without delamination.

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Boost PFC front-end in 11–22 kW bi-directional OBCs converting AC grid to 400–475 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; operates at 65–100 kHz with ZVS assist.

Use Value: Ultra-low Q_rr and fast di_F/dt minimize body diode losses during light-load ZVS transitions, improving efficiency across 10–100% load range.

Use Scenario: Primary-side switching in 3.3–11 kW LLC resonant DC-DC stage stepping down 400 V battery to 12–48 V low-voltage bus.

IC Role / Device Role / Timing Role: Half-bridge primary switch; leverages integrated body diode for freewheeling and ZVS turn-on.

Use Value: Low E_oss (3.7 µJ) and optimized C_oss behavior reduce dead-time losses and improve ZVS window stability at high frequency.

Phase-Shift Full-Bridge (PSFB)

Bidirectional DC-DC for Vehicle-to-Grid (V2G)

Use Scenario: High-efficiency isolated DC-DC conversion in 15–30 kW PSFB converters for commercial EV charging infrastructure.

IC Role / Device Role / Timing Role: Low-side switch with synchronous rectification support; handles high di/dt during phase-shift transitions.

Use Value: 1300 A/µs di_F/dt rating ensures clean, oscillation-free body diode commutation during lagging-leg ZVS, reducing EMI and stress.

Use Scenario: Bidirectional power transfer between traction battery and grid or auxiliary loads in V2G-enabled vehicles.

IC Role / Device Role / Timing Role: Unidirectional switch in dual-active-bridge (DAB) topology; conducts in both directions via body diode and channel.

Use Value: AEC-Q101 qualification and 150 °C T_j rating ensure long-term reliability under repeated charge/discharge cycling and thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095CFD7	R_DS(on) = 95 mΩ (lower conduction loss), Q_g = 44 nC (higher drive demand), same CFD7A die and AEC-Q101 rating.	Better suited for high-current, lower-frequency PFC where conduction dominates; less optimal for >150 kHz resonant operation.	Select when system prioritizes R_DS(on)-driven efficiency over switching loss and gate drive complexity.
STW65N6F6	650 V, 65 mΩ, no integrated fast body diode, not AEC-Q101 qualified; higher Q_rr (1.2 µC) and lower di_F/dt (400 A/µs).	Limited to industrial/non-automotive DC-DC; requires external diode for ZVS and fails automotive PPAP requirements.	Only consider for cost-sensitive, non-automotive applications where AEC-Q101 and body diode performance are not required.

Compared with IPW65R095CFD7 and STW65N6F6, IPB65R190CFD7AATMA1 offers the optimal balance of low switching loss (via Q_g and E_oss), automotive qualification, and integrated diode performance-making it the preferred choice for production-grade OBC and V2G power stages.

Availability

IPB65R190CFD7AATMA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC resonant converters, and phase-shift full-bridge topologies requiring stable component supply, AEC-Q101 compliance, and high-temperature operational integrity.

Supply support for IPB65R190CFD7AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to the CoolMOS™ CFD7A product line-designed specifically for high-efficiency, high-reliability automotive power conversion, with emphasis on PFC and resonant DC-DC topologies in electric vehicle charging systems.

FAQ

Is IPB65R190CFD7AATMA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states that linear-mode assessment requires direct technical consultation with Infineon sales due to uncharacterized safe operating area, thermal runaway risk, and lack of SOA validation in that region.

What is the maximum recommended gate resistor value for 100 kHz switching?

For stable 100 kHz operation with minimal overshoot and ringing, the recommended gate resistor is ≤10.2 Ω, based on the datasheet's dynamic test condition (RG = 10.2 Ω). Higher values increase switching time and losses; lower values risk gate oscillation without proper layout control.

Does the integrated body diode replace an external anti-parallel diode in LLC half-bridge designs?

Yes-the integrated fast body diode (Q_rr = 0.46 µC, t_rr = 97 ns) is fully characterized and qualified for freewheeling and ZVS turn-on in LLC half-bridge configurations, eliminating the need for an external anti-parallel diode in production designs.

How does the 1300 A/µs di_F/dt rating impact PCB layout requirements?

This rating demands minimized source inductance: use short, wide source traces; place gate driver close to the source pad; avoid vias in high-di/dt paths; and implement Kelvin source connections if precision current sensing is required-otherwise parasitic inductance can cause voltage spikes exceeding V_GS limits.

IPB65R190CFD7AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 190mOhm @ 6.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1291 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 77W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R190CFD7AATMA1 FAQ

1.How can I place an order for IPB65R190CFD7AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R190CFD7AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R190CFD7AATMA1 reliable?

The price and inventory of IPB65R190CFD7AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R190CFD7AATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R190CFD7AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R190CFD7AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R190CFD7AATMA1?

IPB65R190CFD7AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R190CFD7AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R190CFD7AATMA1?

For technical support, including IPB65R190CFD7AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R190CFD7AATMA1 requirements.

6.How does Aetrix verify that IPB65R190CFD7AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R190CFD7AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R190CFD7AATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R190CFD7AATMA1?

All IPB65R190CFD7AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R190CFD7AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R190CFD7AATMA1 part is unused and in its original packaging.

Return procedure for IPB65R190CFD7AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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