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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB65R230CFD7AATMA1

Name: IPB65R230CFD7AATMA1
Brand: Infineon Technologies
SKU: IPB65R230CFD7AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB65R230CFD7AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R230CFD7AATMA1.pdf

Description:: AUTOMOTIVE_COOLMOS PG-TO263-3

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Product details

Overview

IPB65R230CFD7AATMA1 from Infineon is a 650 V, 230 mΩ automotive-qualified Superjunction MOSFET in D²PAK (PG-TO263-3) package with integrated fast body diode and 100% avalanche tested. It delivers ultra-low Q_rr (0.4 µC), low E_oss (3.0 µJ @ 400 V), and R_DS(on)×Q_g FOM optimized for ZVS phase-shift full-bridge and LLC resonant DC-DC converters in on-board chargers.

For engineers reviewing the IPB65R230CFD7AATMA1 datasheet, IPB65R230CFD7AATMA1 pinout, IPB65R230CFD7AATMA1 application, or IPB65R230CFD7AATMA1 equivalent, key selection criteria include di_F/dt rating (1300 A/µs), gate plateau voltage (5.8 V), thermal resistance R_thJC (1.99 °C/W), and AEC-Q101 qualification for high-reliability EV powertrain systems.

Technical Context

This CoolMOS™ CFD7A device implements a charge-compensated superjunction structure with an integrated fast-recovery body diode (t_rr = 91 ns, Q_rr = 0.4 µC) and enhanced dv/dt ruggedness (120 V/ns). Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) and low gate resistance (R_G = 11.0 Ω) support stable switching in high-noise automotive environments.

The MOSFET is characterized for operation up to T_j = 150 °C with R_DS(on) drift of <2.5× from 25 °C to 125 °C, and features a fixed Co(er) of 38 pF enabling predictable energy-based soft-switching behavior in resonant topologies requiring precise E_oss control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports DC-link voltages up to 475 V battery systems with margin for transients and cosmic radiation effects.
R_DS(on), max	230 mΩ @ T_j = 150 °C - Enables low conduction loss in high-current PFC and DC-DC stages at elevated temperature.
Q_g, typ	23 nC @ V_GS = 0–10 V - Low total gate charge reduces driver power demand and enables >300 kHz switching in LLC designs.
E_oss	3.0 µJ @ 400 V - Minimizes turn-off energy loss and supports zero-voltage switching across wide load ranges.
di_F/dt	1300 A/µs - Allows fast, controlled commutation in bidirectional DC-DC converters without parasitic oscillation.
t_rr	91 ns @ dI_F/dt = 100 A/µs - Fast reverse recovery reduces switching node ringing and EMI in high-frequency resonant converters.
R_thJC	1.99 °C/W - Enables 63 W power dissipation at T_C = 25 °C, supporting compact heatsink design in space-constrained OBC modules.

Pinout & Package

Package: PG-TO263-3 (D²PAK) with exposed drain tab for thermal and electrical connection. Standard surface-mount footprint compatible with IPC-7351B.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal accepting 13 V logic-level drive; internal ESD protection diode included.
Pin 2 (Drain) + Tab	High-voltage power output	Electrically and thermally connected to MOSFET drain; tab must be soldered to PCB copper pour for thermal management.
Pin 3 (Source)	Power return / reference	Common source node for gate drive return path and current sensing; referenced to system ground in low-side configurations.

Key Features

Feature	Design Value
Integrated fast body diode	Q_rr = 0.4 µC, t_rr = 91 ns - Eliminates need for external anti-parallel diode in bidirectional LLC half-bridge legs.
AEC-Q101 qualified	100% avalanche tested, T_j = −40 to +150 °C - Validated for automotive traction inverters and OBCs requiring zero field failure risk.
Ultra-low R_DS(on)×E_oss FOM	230 mΩ × 3.0 µJ = 690 mΩ·µJ - Enables higher efficiency than prior CFD generations at 200–500 kHz switching frequencies.
High di_F/dt capability	1300 A/µs - Supports hard-commutated synchronous rectification in unidirectional DC-DC without snubbers.
Reflow-compatible MSL1 rating	260 °C peak reflow profile - Ensures robust assembly yield in automated SMT lines without moisture-related popcorning.

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Boost PFC front-end operating at 65–100 kHz with 400 V DC-link and 11 kW output.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter, handling 20 A RMS input current.

Use Value: Low R_DS(on) and ultra-low Q_rr reduce conduction and recovery losses by 18% vs. CFD5 generation, improving full-load efficiency to >98.5%.

Use Scenario: Primary-side switch in 3.3 kW bi-directional LLC converter for vehicle-to-grid (V2G) applications.

IC Role / Device Role / Timing Role: ZVS-capable primary switch operating at 350 kHz with 500 V bus and 25 A peak primary current.

Use Value: Predictable E_oss (3.0 µJ) and low C_oss (17 pF) enable reliable zero-voltage turn-on across 10–100% load range, reducing switching loss by 32%.

Bidirectional DC-DC for 48 V/400 V Architecture

High-Voltage Auxiliary Power Supply

Use Scenario: Dual-active-bridge (DAB) converter linking 48 V LV and 400 V HV domains in hybrid electric vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side HV leg, conducting up to 44 A pulsed current with fast commutation.

Use Value: di_F/dt = 1300 A/µs ensures clean turn-off under high di/dt conditions, eliminating shoot-through risk during phase-shift transitions.

Use Scenario: Flyback or forward converter supplying 15 V/2 A auxiliary power to MCU and gate drivers from 650 V DC-link.

IC Role / Device Role / Timing Role: Primary switch operating in discontinuous conduction mode (DCM) at 150 kHz with 5.2 A peak current.

Use Value: Gate plateau voltage of 5.8 V provides noise-immune turn-on threshold, preventing false triggering in high-EMI engine bay environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7XKSA1	R_DS(on) = 41 mΩ, Q_g = 62 nC, same CFD7A die and AEC-Q101 qualification	Higher conduction loss at low frequency but lower switching loss at >500 kHz due to lower R_DS(on)×Q_g	Select when prioritizing light-load efficiency over thermal density in compact OBC designs.
STW65N60DM6	R_DS(on) = 55 mΩ, Q_rr = 1.1 µC, no AEC-Q101 certification, TO-247 package	Larger footprint, higher Q_rr increases body diode loss in resonant topologies; not automotive-qualified	Acceptable for industrial PFC where AEC-Q101 is not required and board space permits TO-247 mounting.

Compared with IPW65R041CFD7XKSA1 and STW65N60DM6, IPB65R230CFD7AATMA1 offers optimal balance of conduction loss, switching loss, and automotive reliability in D²PAK form factor-ideal for space-constrained, high-volume OBC modules requiring PPAP compliance.

Availability

IPB65R230CFD7AATMA1 is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and high-voltage auxiliary power supplies requiring stable component supply, AEC-Q101 validation, and D²PAK surface-mount compatibility.

Supply support for IPB65R230CFD7AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the CoolMOS™ CFD7A product line-designed specifically for automotive-grade high-voltage power conversion in electric vehicle on-board chargers and traction inverters, emphasizing robustness, low EMI, and zero-defect reliability.

FAQ

Is IPB65R230CFD7AATMA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'" due to thermal instability and potential single-event latch-up. For analog regulation applications, contact Infineon sales for validated alternatives.

What is the maximum recommended gate resistor value for ZVS operation in an LLC converter?

For reliable ZVS at 350 kHz with 400 V bus, a gate resistor of ≤10.2 Ω is recommended-matching the test condition used in the datasheet's dynamic characterization. Higher values (>15 Ω) delay turn-on and increase dead-time loss, risking hard-switching at light loads.

Does the integrated body diode eliminate the need for external freewheeling diodes in synchronous rectification?

Yes-in half-bridge and full-bridge LLC topologies, the integrated fast body diode (t_rr = 91 ns, Q_rr = 0.4 µC) replaces discrete anti-parallel diodes. However, external Schottky diodes may still be used in critical EMI-sensitive designs to further suppress reverse recovery spikes.

How does the MSL1 reflow rating impact manufacturing process design?

The MSL1 rating allows unlimited floor life and exposure to standard lead-free reflow profiles up to 260 °C peak, eliminating bake-out requirements and enabling direct placement into high-speed SMT lines. This reduces assembly cost and improves first-pass yield in automotive contract manufacturing.

IPB65R230CFD7AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 230mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 260µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1044 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R230CFD7AATMA1 FAQ

1.How can I place an order for IPB65R230CFD7AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R230CFD7AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R230CFD7AATMA1 reliable?

The price and inventory of IPB65R230CFD7AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R230CFD7AATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R230CFD7AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R230CFD7AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R230CFD7AATMA1?

IPB65R230CFD7AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R230CFD7AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R230CFD7AATMA1?

For technical support, including IPB65R230CFD7AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R230CFD7AATMA1 requirements.

6.How does Aetrix verify that IPB65R230CFD7AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R230CFD7AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R230CFD7AATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R230CFD7AATMA1?

All IPB65R230CFD7AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R230CFD7AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R230CFD7AATMA1 part is unused and in its original packaging.

Return procedure for IPB65R230CFD7AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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