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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB65R310CFDAATMA1

Name: IPB65R310CFDAATMA1
Brand: Infineon Technologies
SKU: IPB65R310CFDAATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB65R310CFDAATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R310CFDAATMA1.pdf

Description:: MOSFET N-CH 650V 11.4A D2PAK

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Product details

Overview

IPB65R310CFDAATMA1 from Infineon Technologies is a 650 V, 0.31 Ω R_DS(on) automotive-qualified CoolMOS™ CFDA superjunction MOSFET in TO-220 package, featuring 41 nC total gate charge, 95 ns reverse recovery time, and AEC-Q101 qualification. It delivers ultra-fast body diode performance and high commutation ruggedness for resonant LLC and PFC stages in on-board chargers and DC-DC converters.

For engineers reviewing the IPB65R310CFDAATMA1 datasheet, IPB65R310CFDAATMA1 pinout, IPB65R310CFDAATMA1 application, or IPB65R310CFDAATMA1 equivalent, key selection criteria include its 900 A/µs body diode di/dt rating, 290 mJ single-pulse avalanche energy, low 3.5 µJ E_oss at 400 V, and thermal resistance of 1.2 K/W (junction-to-case).

Technical Context

This device implements Infineon's CoolMOS™ CFDA superjunction architecture optimized for high-frequency switching in automotive power conversion. Its gate threshold voltage (3.5–4.5 V) and plateau voltage (6.4 V) support robust drive with standard 12 V gate drivers, while the 44 pF energy-related output capacitance enables efficient zero-voltage switching.

The MOSFET integrates a highly rugged intrinsic body diode with 0.35 µC Q_rr, 6.5 A I_rrm, and 95 ns t_rr, enabling reliable hard- and soft-switching operation without external anti-parallel diodes in bidirectional topologies like dual-active-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC-link applications with ≥1.6× safety margin for automotive transients
R_DS(on), max	0.31 Ω at V_GS = 10 V, T_j = 25°C - enables low conduction loss in 11.4 A continuous drain current operation
Q_g, typ	41 nC - determines gate drive power requirement and switching speed in 100–500 kHz resonant converters
E_oss @ 400 V	3.5 µJ - directly impacts turn-on loss and ZVS capability in LLC half-bridge designs
Body diode di/dt	900 A/µs - ensures reliable commutation under fast current reversal in phase-shifted full-bridge topologies
Avalanche energy	290 mJ (single pulse) - provides robustness against inductive switching stress without snubber circuits
T_j max	150°C - allows operation in under-hood environments with active thermal management

Pinout & Package

IPB65R310CFDAATMA1 uses the TO-220 package (PG-TO220) with isolated tab. Pin 1 is Gate, Pin 2 is Drain (tab-connected), and Pin 3 is Source - enabling direct heatsink mounting with electrical isolation.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤3.4 Ω series resistance to damp ringing due to 4.5 Ω internal gate resistance
Pin 2 (Drain)	High-side power terminal	Connected to drain metallization and electrically tied to the isolated metal tab for thermal conduction
Pin 3 (Source)	Reference terminal	Serves as return path for load current and gate drive loop; must be routed with low inductance to minimize switching overshoot

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 95 ns, Q_rr = 0.35 µC - reduces reverse recovery loss and EMI in hard-commutated PFC boost stages
High commutation ruggedness	di/dt = 900 A/µs - sustains rapid current reversal without latch-up in synchronous rectification and bidirectional DC-DC
Low figure-of-merit	R_DS(on) × Q_g = 12.71 Ω·nC - balances conduction and switching losses for optimal efficiency at 200–300 kHz
AEC-Q101 qualified	Qualified for automotive powertrain and charging systems - meets stress test requirements including HTGB, HTRB, and temperature cycling
Green package	RoHS-compliant, Pb-free plating, halogen-free mold compound - satisfies EU ELV and China RoHS directives

Applications

On-Board Charger (OBC)

DC-DC Converter (400 V → 12 V)

Use Scenario: High-efficiency 6.6 kW bidirectional OBC using interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: Primary-side switch in LLC half-bridge resonant stage; operates at 250–350 kHz with ZVS.

Use Value: Low E_oss (3.5 µJ) and fast body diode enable >97% peak efficiency and eliminate need for external SiC diodes.

Use Scenario: Isolated 3.3 kW DC-DC converter for 400 V battery to 12 V auxiliary supply in BEVs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge configuration.

Use Value: 900 A/µs di/dt rating ensures reliable commutation during zero-voltage transitions under full load.

Industrial AC-DC Power Supply

Renewable Energy Inverter

Use Scenario: 3 kW telecom rectifier with active clamp forward and PFC front-end.

IC Role / Device Role / Timing Role: Clamp switch handling repetitive avalanche energy up to 0.43 mJ per cycle.

Use Value: 290 mJ single-pulse avalanche rating eliminates derating for transient overvoltage events.

Use Scenario: String-level DC optimizer for photovoltaic systems with integrated MPPT and DC-DC conversion.

IC Role / Device Role / Timing Role: High-side switch in buck-boost stage operating at 100–200 kHz with wide input range (30–80 V).

Use Value: AEC-Q101 qualification ensures long-term reliability in outdoor, thermally cycling environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R310CFDA	D²PAK (PG-TO263) package; identical electrical specs and AEC-Q101 qualification	Better thermal performance on PCB with 6 cm² copper area (R_thJA = 35 K/W vs. 62 K/W for TO-220)	Select for SMD assembly and space-constrained layouts where heatsinking via PCB is preferred
IPW65R045CFD7	Lower R_DS(on) (45 mΩ), higher Q_g (72 nC), same 650 V rating and AEC-Q101	Higher conduction efficiency but increased gate drive loss; suited for <150 kHz operation	Select when system prioritizes conduction loss reduction over switching frequency scalability

Compared with IPP65R310CFDA and IPW65R045CFD7, IPB65R310CFDAATMA1 offers optimal trade-off between gate drive simplicity (41 nC), thermal interface flexibility (TO-220 tab isolation), and ruggedness for 200–400 kHz automotive power stages.

Availability

IPB65R310CFDAATMA1 is available at Aetrix Electronics and suitable for on-board chargers, DC-DC converters, and industrial AC-DC power supplies requiring stable component supply and automotive-grade reliability.

Supply support for IPB65R310CFDAATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

The CoolMOS™ CFDA product line targets high-efficiency, high-reliability switching applications in automotive electrification and renewable energy systems, emphasizing fast body diode performance and avalanche robustness.

FAQ

What is the maximum continuous drain current for IPB65R310CFDAATMA1 at 100°C case temperature?

The maximum continuous drain current is 7.2 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating reflects thermal limitation rather than electrical capability, and assumes proper heatsinking with R_thJC = 1.2 K/W and ambient conditions that maintain junction temperature ≤150°C.

Is IPB65R310CFDAATMA1 suitable for zero-voltage switching (ZVS) topologies?

Yes - its 3.5 µJ E_oss at 400 V and 44 pF energy-related output capacitance are specifically optimized for ZVS in LLC resonant converters. The low C_oss enables reliable turn-on with minimal voltage spike, and the 95 ns t_rr supports clean current commutation during dead-time intervals.

Does this MOSFET require a negative gate turn-off voltage?

No - the device has a gate threshold voltage range of 3.5–4.5 V and is designed for 0 V to 10–15 V gate drive. A negative turn-off voltage is not required; however, a gate resistor ≤3.4 Ω is recommended to suppress oscillation due to its 4.5 Ω internal gate resistance and high dv/dt capability (50 V/ns).

How does the body diode performance compare to standard silicon MOSFETs?

Unlike conventional silicon MOSFETs, IPB65R310CFDAATMA1 features an ultra-fast, soft-recovery body diode with 95 ns t_rr, 0.35 µC Q_rr, and 900 A/µs di/dt - characteristics typically found only in discrete SiC Schottky diodes. This eliminates reverse recovery spikes and reduces EMI in hard-switched PFC and synchronous rectifier applications.

IPB65R310CFDAATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 310mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1110 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104.2W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R310CFDAATMA1 FAQ

1.How can I place an order for IPB65R310CFDAATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R310CFDAATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R310CFDAATMA1 reliable?

The price and inventory of IPB65R310CFDAATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R310CFDAATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R310CFDAATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R310CFDAATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R310CFDAATMA1?

IPB65R310CFDAATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R310CFDAATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R310CFDAATMA1?

For technical support, including IPB65R310CFDAATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R310CFDAATMA1 requirements.

6.How does Aetrix verify that IPB65R310CFDAATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R310CFDAATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R310CFDAATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R310CFDAATMA1?

All IPB65R310CFDAATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R310CFDAATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R310CFDAATMA1 part is unused and in its original packaging.

Return procedure for IPB65R310CFDAATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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