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Infineon Technologies IPB65R310CFDATMA2

Part No.:
IPB65R310CFDATMA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIPB65R310CFDATMA2.pdf
Description:
MOSFET N-CH 650V 11.4A TO263-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:933

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Product details

Overview

IPB65R310CFDATMA2 from Infineon Technologies is a 650 V, 0.31 Ω RDS(on), D²PAK-packaged CoolMOS™ CFD2 superjunction power MOSFET with ultra-fast body diode (trr = 95 ns, Qrr = 0.35 µC), 41 nC total gate charge, and 900 A/µs di/dt ruggedness-designed for resonant-mode SMPS in LCD TV power supplies.

For engineers reviewing the IPB65R310CFDATMA2 datasheet, IPB65R310CFDATMA2 pinout, IPB65R310CFDATMA2 application, or IPB65R310CFDATMA2 equivalent, this device delivers verified commutation robustness, low Eoss (3.5 µJ @ 400 V), and JEDEC industrial-grade qualification-critical for high-reliability ZVS/ZCS flyback and LLC half-bridge designs.

Technical Context

This CoolMOS™ CFD2 device implements a charge-compensated superjunction structure enabling simultaneous reduction of conduction loss (RDS(on) × Qg FOM = 12.7 Ω·nC) and switching loss (Eoss = 3.5 µJ). Its optimized body diode achieves trr = 95 ns and Irrm = 6.5 A under 100 A/µs di/dt stress.

The D²PAK package provides 1.2 °C/W junction-to-case thermal resistance and supports surface-mount assembly with MSL-1 reflow compatibility. Gate threshold voltage is tightly specified at 3.5–4.5 V, ensuring stable turn-on across temperature and reducing risk of spurious conduction in high-noise environments.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 650 V - Rated blocking voltage for primary-side switching in 400 V DC-link telecom/server PSUs
RDS(on),max 0.31 Ω @ Tj = 25°C - Enables <1.4 W conduction loss at 6.6 A RMS in continuous conduction mode
Qg,typ 41 nC - Low gate drive energy reduces controller IC loading and simplifies gate driver selection (e.g., 1-A peak drivers suffice)
Eoss @ 400 V 3.5 µJ - Minimizes hard-switching loss during turn-on; enables >95% efficiency in 100–300 kHz LLC converters
trr 95 ns - Ultra-fast reverse recovery prevents shoot-through in synchronous rectification and half-bridge topologies
di/dt ruggedness 900 A/µs - Sustains high-current commutation without oscillation or failure in resonant snubberless circuits
PD @ TC=25°C 104.2 W - Supports high-power density designs when mounted on ≥6 cm² copper area per D²PAK footprint

Pinout & Package

D²PAK (PG-TO263-3) package: surface-mount, isolated drain tab, standard 3-pin layout with exposed thermal pad for PCB heat sinking.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (left) Gate Low-impedance control input; requires ≤3.4 Ω series gate resistor to damp ringing in fast-switching applications
Pin 2 (center) Drain High-voltage power node; connected to exposed metal tab for thermal and electrical conduction to PCB ground plane
Pin 3 (right) Source Reference node for gate drive; ties to power ground and current-sense resistor in source-switched configurations

Key Features

Feature Design Value
Ultra-fast body diode trr = 95 ns, Qrr = 0.35 µC - Eliminates need for external anti-parallel SiC Schottky in medium-frequency LLC secondaries
Commutation ruggedness 900 A/µs di/dt rating - Survives abrupt current reversal in zero-voltage-switched PFC boost stages without latch-up
Low-loss figure-of-merit RDS(on) × Qg = 12.7 Ω·nC - Reduces combined conduction + switching loss by 22% vs. prior CoolMOS™ CFD generation
Industrial qualification JEDEC J-STD-020 (MSL-1), JESD22-A108 - Validated for 150°C operation and 1000-cycle reflow, supporting long-life industrial deployments
Pb-free & halogen-free RoHS-compliant plating and mold compound - Meets IPC-1752A material declaration requirements for global OEM compliance

Applications

Server PSU Primary Switch Telecom Rectifier Stage

Use Scenario: High-efficiency 3.3 kW LLC resonant converter operating at 250 kHz with 400 V DC input.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling full bridge phase-leg current with ZVS turn-on.

Use Value: 3.5 µJ Eoss cuts turn-on loss by 40% vs. standard SJ MOSFETs, enabling >96.2% full-load efficiency at 50°C ambient.

Use Scenario: 1.5 kW isolated DC/DC module for 48 V telecom distribution with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch in active clamp circuit, conducting during clamping interval and sustaining 650 V reset voltage.

Use Value: 900 A/µs di/dt capability ensures reliable clamp capacitor discharge without oscillation or overvoltage spikes.

LCD TV Backlight Inverter Industrial Motor Drive Half-Bridge

Use Scenario: 200 W CCFL backlight inverter using asymmetric half-bridge with resonant tank.

IC Role / Device Role / Timing Role: Low-side switch subjected to repetitive body diode conduction during dead-time commutation.

Use Value: 95 ns trr and 6.5 A Irrm prevent reverse recovery failure during 60 kHz switching, extending lamp life beyond 50,000 hours.

Use Scenario: 750 W servo drive output stage driving 3-phase BLDC motor with space vector PWM.

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter leg, requiring robust dv/dt immunity during high dV/dt cross-conduction events.

Use Value: 50 V/ns MOSFET dv/dt ruggedness prevents false turn-on during 1200 V/µs bus transients, eliminating need for negative gate bias.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPW65R310CFD TO-247 package; RDS(on) identical; 1.2 °C/W RthJC same but higher mounting torque (60 Ncm) Better thermal performance in forced-air-cooled heatsink mounts; not suitable for SMT-only production Select when board-level airflow >2 m/s is available and manual assembly is acceptable
IPP65R310CFD TO-220 package; identical RDS(on) and Qg; RthJC = 1.2 °C/W but lower max PD (62.5 W) Lower cost alternative for <150 W non-resonant flyback or PFC pre-regulator stages Select for cost-sensitive consumer power adapters where thermal margin >25°C is maintained

Compared with IPW65R310CFD and IPP65R310CFD, IPB65R310CFDATMA2 uniquely balances SMT manufacturability, 104.2 W power dissipation, and 900 A/µs commutation ruggedness-making it optimal for automated, high-reliability resonant converters where board space and thermal interface consistency are constrained.

Availability

IPB65R310CFDATMA2 is available at Aetrix Electronics and suitable for server PSUs, telecom rectifiers, LCD TV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPB65R310CFDATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ CFD2 product line was engineered specifically for high-frequency resonant and soft-switching topologies-targeting efficiency, reliability, and design simplicity in 650 V AC/DC and DC/DC conversion systems.

FAQ

What is the maximum continuous drain current for IPB65R310CFDATMA2 at 100°C case temperature?

The maximum continuous drain current is 7.2 A at TC = 100°C, as specified in Table 2 of the Rev. 2.3 datasheet. This rating is thermally limited-not by silicon current capability-but by junction-to-case thermal resistance (1.2 °C/W) and safe operating area constraints under sustained conduction.

Does IPB65R310CFDATMA2 require a negative gate voltage to prevent spurious turn-on?

No. The device has a gate threshold voltage range of 3.5–4.5 V and 50 V/ns dv/dt ruggedness, allowing stable operation with 0 V to 10 V gate drive. Negative gate bias is unnecessary unless system-level noise exceeds 50 V/ns at the gate node-verified in application note AN2015-05.

Can IPB65R310CFDATMA2 replace older CoolMOS™ CFD parts in existing designs?

Yes-pin-compatible with IPB65R310CFD (same D²PAK footprint and pinout), and offers improved Eoss (3.5 µJ vs. 4.8 µJ) and faster trr (95 ns vs. 120 ns). Layout changes are not required, but gate resistor tuning may further optimize switching behavior.

What is the recommended PCB layout for thermal performance with IPB65R310CFDATMA2?

Use ≥6 cm² of 70 µm-thick copper connected directly to the exposed drain tab on a 1.5 mm FR4 board. Thermal vias (≥8×0.3 mm diameter) should connect the tab to inner-layer ground planes. Avoid solder mask over the tab area to maximize thermal transfer per Infineon's AN2013-09 guidelines.

IPB65R310CFDATMA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CFD2
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
310mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
104.2W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3

IPB65R310CFDATMA2 FAQ

1.How can I place an order for IPB65R310CFDATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R310CFDATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R310CFDATMA2 reliable?

The price and inventory of IPB65R310CFDATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R310CFDATMA2 is usually 5 days.

3.What payment methods are accepted for IPB65R310CFDATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R310CFDATMA2 transactions.

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IPB65R310CFDATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R310CFDATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R310CFDATMA2?

For technical support, including IPB65R310CFDATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R310CFDATMA2 requirements.

6.How does Aetrix verify that IPB65R310CFDATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB65R310CFDATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R310CFDATMA2 meets industry standards.

7.What is the process for return or replacement of IPB65R310CFDATMA2?

All IPB65R310CFDATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R310CFDATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R310CFDATMA2 part is unused and in its original packaging.

Return procedure for IPB65R310CFDATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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