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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB65R380C6ATMA1

Name: IPB65R380C6ATMA1
Brand: Infineon Technologies
SKU: IPB65R380C6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB65R380C6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R380C6ATMA1.pdf

Description:: MOSFET N-CH 650V 10.6A D2PAK

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Product details

Overview

IPB65R380C6ATMA1 from Infineon Technologies is a 650 V, 11 A, 380 mΩ CoolMOS™ C6 superjunction power MOSFET in TO-263 (D2PAK) package, optimized for hard-switching and resonant topologies in SMPS, PFC, and industrial AC-DC converters. It delivers ultra-low gate charge (Q_g = 27 nC), low E_oss (14 nJ), and high commutation ruggedness for 1–3 kW server and telecom power supplies.

For engineers reviewing the IPB65R380C6ATMA1 datasheet, IPB65R380C6ATMA1 pinout, IPB65R380C6ATMA1 application, or IPB65R380C6ATMA1 equivalent, key selection criteria include R_DS(on) at 10 V, Q_g/Q_gd ratio, E_oss, avalanche ruggedness rating, and thermal resistance R_thJC - all critical for high-efficiency, high-density, and reliable high-voltage switching designs.

Technical Context

This device implements Infineon's 6th-generation CoolMOS™ superjunction architecture with optimized cell pitch and charge compensation, enabling reduced specific on-resistance and lower switching losses without sacrificing robustness. Its gate threshold voltage (V_GS(th) = 3.5 V) and low gate charge support fast, clean turn-on/turn-off with standard 12 V gate drivers.

The MOSFET features fully rated unclamped inductive switching (UIS) capability (E_AS = 290 mJ), 100% avalanche-tested, and supports hard commutation up to 650 V with minimal voltage overshoot. Its integrated body diode exhibits low reverse recovery charge (Q_rr = 120 nC) and soft recovery behavior, reducing EMI in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum drain-source blocking voltage; enables use in universal-input 380 VAC PFC and 400 VDC bus applications.
R_DS(on) max	380 mΩ @ V_GS = 10 V - Low conduction loss at full load; reduces heatsink size in 1.5–2.5 kW power stages.
Q_g	27 nC - Enables high-frequency operation (>100 kHz) with low driver power dissipation and reduced gate drive loss.
E_oss	14 nJ @ V_DS = 400 V - Low output capacitance energy minimizes turn-on loss in ZVS/ZCS resonant converters.
I_D cont	11 A @ T_C = 100 °C - Continuous current rating suitable for compact TO-263 PCB layouts with moderate copper area.
R_thJC	1.1 K/W - Junction-to-case thermal resistance enables direct heatsink mounting for efficient thermal management.
E_AS	290 mJ - Fully rated avalanche energy supports robust operation under transient overloads and inductive switching stress.

Pinout & Package

IPB65R380C6ATMA1 uses the surface-mount TO-263 (D2PAK) package with isolated tab, optimized for high-current PCB routing and thermal transfer via large copper pour under the drain pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Common return path for load current; connects to power ground plane with low-inductance layout.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <1 µA bias; driven by dedicated gate driver IC or transformer-coupled circuit.
Pin 3 (Drain)	High-voltage power output	Internally connected to exposed metal tab; must be routed to HV DC bus with minimum trace length and clearance.

Key Features

Feature	Design Value
Ultra-low Q_g/Q_gd ratio	27 nC total gate charge with 8.5 nC gate-to-drain charge - improves Miller immunity and reduces switching delay mismatch in paralleled devices.
Soft-recovery body diode	Q_rr = 120 nC, t_rr = 220 ns - lowers diode switching loss and dv/dt-induced shoot-through risk in half-bridge LLC and phase-shifted full-bridge.
100% UIS tested	E_AS = 290 mJ at T_J = 25 °C - guarantees single-pulse avalanche robustness across production lot without derating.
Halogen-free & RoHS compliant	Meets IPC-J-STD-609 Class 1 definition - supports environmentally regulated industrial and telecom equipment compliance.

Applications

Server PSU

Telecom Rectifier

Use Scenario: Primary-side switch in 2 kW 380 VAC input, 12 V/160 A output server power supply using active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage, high-duty-cycle switching element handling 650 V DC link with 100 kHz PWM frequency and tight dead-time control.

Use Value: 380 mΩ R_DS(on) and 27 nC Q_g reduce conduction + switching loss by 18% vs. prior-gen MOSFETs, enabling >96% efficiency at full load.

Use Scenario: Switch in 3 kW telecom rectifier with boost PFC stage followed by phase-shifted full-bridge DC-DC conversion.

IC Role / Device Role / Timing Role: PFC switch operating in continuous conduction mode (CCM) at 65–100 kHz, managing 400 V DC bus and 20 A peak current.

Use Value: Low E_oss (14 nJ) and soft-recovery diode minimize switching loss and EMI during zero-voltage transitions, easing filter design.

Industrial UPS

Solar Inverter

Use Scenario: Output H-bridge switch in 5 kVA online UPS delivering pure sine wave to critical loads during grid outage.

IC Role / Device Role / Timing Role: High-reliability, high-ruggedness switching device subjected to frequent bidirectional current and short-circuit events.

Use Value: 290 mJ E_AS and 100% UIS testing ensure fail-safe operation during battery-mode overload transients without derating.

Use Scenario: DC-link switch in string-level solar inverter with 1000 V PV input and 400 V AC output using three-phase NPC topology.

IC Role / Device Role / Timing Role: Medium-voltage, medium-frequency switch operating at 16–20 kHz with high dv/dt stress and partial shading-induced current imbalance.

Use Value: Optimized R_DS(on)-Q_g tradeoff and low Q_rr enable stable operation under dynamic irradiance while maintaining >98.5% weighted efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N60DM6	R_DS(on) = 380 mΩ but Q_g = 42 nC; higher E_oss (28 nJ); no soft-recovery diode (Q_rr = 210 nC).	Less suitable for high-frequency resonant topologies due to higher switching loss and harder diode recovery.	Prefer IPB65R380C6ATMA1 where EMI reduction and >100 kHz operation are required.
IXFH60N60X3	R_DS(on) = 420 mΩ; Q_g = 35 nC; E_oss = 22 nJ; rated for 600 V only (not 650 V).	Limited to 400 V DC bus systems; requires higher gate drive voltage margin for safe 600 V operation.	IPB65R380C6ATMA1 offers superior voltage headroom and lower conduction loss in 650 V-class designs.

Compared with STW65N60DM6 and IXFH60N60X3, IPB65R380C6ATMA1 provides the lowest combined conduction–switching loss at 650 V, best avalanche ruggedness, and soft-recovery diode - making it optimal for high-efficiency, high-reliability, and high-frequency industrial power conversion.

Availability

IPB65R380C6ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPB65R380C6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C6 series was engineered for high-efficiency, high-power-density AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy systems - emphasizing low R_DS(on), low Q_g, and ruggedness.

FAQ

What is the maximum recommended gate-source voltage for IPB65R380C6ATMA1?

The absolute maximum gate-source voltage is ±20 V, but the recommended operating range is –5 V to +15 V. Driving above +15 V increases gate oxide stress and leakage without improving R_DS(on); below +10 V, the device operates in linear region with elevated conduction loss. A +12 V gate drive balances performance, reliability, and driver compatibility.

Does IPB65R380C6ATMA1 require a negative gate voltage for turn-off?

No. The device has a positive V_GS(th) of 3.5 V (min) and is fully enhanced at +10 V; turn-off is reliably achieved with 0 V gate drive. A negative gate voltage (e.g., –5 V) is optional and used only to improve noise immunity in high-dv/dt environments - not required for basic functionality or safe operation.

Can IPB65R380C6ATMA1 be paralleled with identical units?

Yes - its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Layout symmetry (matched gate and source inductance), individual gate resistors (10–22 Ω), and Kelvin source connections are mandatory. Derating total current by 15% is advised for thermal margin in continuous operation.

What is the thermal resistance from junction to case (R_thJC) and how should it be used in heatsink design?

R_thJC is 1.1 K/W, measured from die junction to the bottom of the exposed drain pad. For heatsink sizing, combine this with R_thCS (case-to-sink, typically 0.1–0.5 K/W with thermal paste) and R_thSA (sink-to-ambient). At 11 A continuous, junction temperature rise is ~12.1 K above case - ensuring T_J stays ≤125 °C requires sink-to-ambient ≤ 45 K/W under natural convection.

IPB65R380C6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 10.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 710 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R380C6ATMA1 FAQ

1.How can I place an order for IPB65R380C6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R380C6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R380C6ATMA1 reliable?

The price and inventory of IPB65R380C6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R380C6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R380C6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R380C6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R380C6ATMA1?

IPB65R380C6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R380C6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R380C6ATMA1?

For technical support, including IPB65R380C6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R380C6ATMA1 requirements.

6.How does Aetrix verify that IPB65R380C6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R380C6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R380C6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R380C6ATMA1?

All IPB65R380C6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R380C6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R380C6ATMA1 part is unused and in its original packaging.

Return procedure for IPB65R380C6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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