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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB70N04S406ATMA1

Name: IPB70N04S406ATMA1
Brand: Infineon Technologies
SKU: IPB70N04S406ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB70N04S406ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB70N04S406ATMA1.pdf

Description:: MOSFET N-CH 40V 70A TO263-3

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Product details

Overview

IPB70N04S406ATMA1 from Infineon Technologies is a 40 V, 70 A N-channel enhancement-mode OptiMOS®-T2 power MOSFET in PG-TO263-3-2 package, AEC-qualified for automotive applications, with 6.2 mΩ max R_DS(on) at V_GS = 10 V and 100% single-pulse avalanche tested to 72 mJ. It operates up to 175 °C and supports high-current motor drive and DC-DC converter primary-side switching.

For engineers reviewing the IPB70N04S406ATMA1 datasheet, IPB70N04S406ATMA1 pinout, IPB70N04S406ATMA1 application, or IPB70N04S406ATMA1 equivalent, key selection criteria include R_DS(on) at 70 A, thermal resistance (R_thJC = 2.6 K/W), avalanche ruggedness (E_AS = 72 mJ), gate charge profile (Q_g = 24.5–32.0 nC), and AEC-Q101 qualification status.

Technical Context

This MOSFET employs trench-based silicon technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive, while the 5.3–6.2 mΩ R_DS(on) range (SMD version) ensures efficient operation under high-current pulsed loads up to 280 A.

The device integrates a fast-recovery body diode (t_rr = 36 ns, Q_rr = 31 nC) and exhibits stable dynamic parameters across temperature: C_iss = 1960–2550 pF, C_oss = 490–640 pF, and Crss = 15–35 pF at V_DS = 0 V, supporting high-frequency synchronous rectification and hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V automotive rail protection and switching
R_DS(on), max	6.2 mΩ - Confirmed for SMD version at V_GS = 10 V, I_D = 70 A; enables <1.5 W conduction loss at full load
I_D, continuous	70 A - Rated at T_C = 25 °C; derates to 51 A at T_C = 100 °C per thermal limit
E_AS	72 mJ - Single-pulse avalanche energy at I_D = 35 A; supports unclamped inductive switching in motor control
R_thJC	2.6 K/W - Junction-to-case thermal resistance; enables direct heatsink mounting for high-power density designs
Q_g	24.5–32.0 nC - Total gate charge at V_DD = 32 V, I_D = 70 A; determines driver current requirement and switching speed
t_r/t_f	10 ns / 9 ns - Rise/fall times at R_G = 3.5 Ω; supports >500 kHz switching in compact converters

Pinout & Package

IPB70N04S406ATMA1 uses the PG-TO263-3-2 surface-mount package (D²PAK), with drain connected to the exposed metal tab for low-inductance, high-current path and thermal dissipation. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 0–10 V logic-level signal; threshold 2.0–4.0 V enables direct microcontroller drive
Pin 2 (Drain)	High-side current path	Connected to exposed copper tab; carries full load current and serves as primary thermal interface
Pin 3 (Source)	Reference node	Common return for gate drive and load current; defines local ground reference for driver IC placement

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit verified to withstand 72 mJ single-pulse avalanche energy without degradation
MSL1 rating	Rated for peak reflow up to 260 °C - compatible with standard lead-free PCB assembly
175 °C operating junction	Enables use in under-hood environments with minimal derating in high-ambient conditions
Green product (RoHS)	Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU

Applications

Automotive Motor Control

12 V DC-DC Converters

Use Scenario: High-side switch in brushed DC motor drivers for HVAC actuators and seat positioners.

IC Role / Device Role / Timing Role: Power switch controlling bidirectional current flow; operates in PWM mode at 20–100 kHz.

Use Value: Low R_DS(on) (6.2 mΩ) minimizes I²R heating during 70 A stall current; avalanche rating protects against back-EMF transients.

Use Scenario: Primary-side switch in synchronous buck converters powering ADAS ECUs.

IC Role / Device Role / Timing Role: High-efficiency main switching element; driven by integrated gate driver with 5.9 V plateau voltage.

Use Value: Fast switching (t_r/t_f ≤ 10 ns) and low Q_g reduce switching losses at 500 kHz; R_thJC = 2.6 K/W enables compact heatsinking.

Electric Power Steering (EPS)

On-Board Charger (OBC) Auxiliary Supplies

Use Scenario: Phase-leg switch in three-phase inverter driving EPS assist motor.

IC Role / Device Role / Timing Role: Half-bridge high-side device; commutated with dead-time control to prevent shoot-through.

Use Value: Body diode t_rr = 36 ns and Q_rr = 31 nC minimize reverse recovery losses during freewheeling; 175 °C rating sustains operation near motor housing.

Use Scenario: Isolated auxiliary supply switch converting 400 V battery to 12 V for OBC control circuitry.

IC Role / Device Role / Timing Role: Flyback or forward converter primary switch; operated with fixed-frequency PWM and overcurrent protection.

Use Value: 40 V V_DS provides margin above 12 V output stage; 100% avalanche test ensures reliability during line transients and startup surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB70N04S407ATMA1	R_DS(on) max = 5.8 mΩ (SMD); same package, AEC-Q101, but higher gate charge (Q_g = 34.5 nC)	Better conduction loss at cost of increased driver loss and slower switching	Select when thermal budget is tighter than drive capability; avoid in high-frequency (>300 kHz) designs
IPP70N04S406AKSA1	Same die, TO-220-3-1 through-hole package; R_thJA = 62 K/W (vs. 40 K/W for SMD on 6 cm² PCB)	Limited to lower-power or prototyping use due to inferior thermal performance	Choose only for manual assembly or legacy board compatibility; not recommended for production automotive modules

Compared with IPB70N04S406ATMA1, the IPB70N04S407ATMA1 trades higher gate charge for lower R_DS(on), while the IPP70N04S406AKSA1 sacrifices thermal efficiency for mechanical mount flexibility-neither offers drop-in replacement without layout or driver redesign.

Availability

IPB70N04S406ATMA1 is available at Aetrix Electronics and suitable for automotive motor control, 12 V DC-DC conversion, and electric power steering systems requiring stable component supply and AEC-Q101-compliant sourcing.

Supply support for IPB70N04S406ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 power transistor family, engineered specifically for high-efficiency, high-reliability switching in 12 V automotive subsystems including motor drives, DC-DC converters, and EPS inverters.

FAQ

What is the maximum allowable gate-source voltage for IPB70N04S406ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. Recommended drive is 10 V for full R_DS(on) specification, with minimum 6 V to ensure reliable turn-on across temperature and process variation. Gate drive circuits must include clamping or Zener protection to prevent overshoot during fast switching.

Is IPB70N04S406ATMA1 suitable for synchronous rectification?

Yes - its low R_DS(on) (5.3–6.2 mΩ), fast body diode (t_rr = 36 ns, Q_rr = 31 nC), and low Crss (15–35 pF) make it suitable for synchronous rectification in buck and flyback topologies up to 300 kHz. However, external gate control timing must account for V_GS(th) variation (2.0–4.0 V) to avoid shoot-through during transitions.

How does the thermal performance differ between PG-TO263-3-2 and PG-TO220-3-1 packages?

PG-TO263-3-2 (IPB70N04S406ATMA1) achieves R_thJA = 40 K/W on 6 cm² PCB copper, while PG-TO220-3-1 (IPP70N04S406AKSA1) has R_thJA = 62 K/W in still air. The SMD package delivers ~35% lower junction-to-ambient resistance due to superior PCB thermal coupling, enabling 20–25% higher continuous current in space-constrained automotive modules.

Does IPB70N04S406ATMA1 require external avalanche protection?

No - it is 100% factory-tested for single-pulse avalanche energy (E_AS = 72 mJ at I_D = 35 A), making external snubbers unnecessary for typical automotive inductive loads like motors and solenoids. However, repetitive avalanche is not rated, so circuit design must limit fault duration to single pulses via fast current limiting or desaturation detection.

IPB70N04S406ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.2mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 26µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 58W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB70N04S406ATMA1 FAQ

1.How can I place an order for IPB70N04S406ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB70N04S406ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB70N04S406ATMA1 reliable?

The price and inventory of IPB70N04S406ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB70N04S406ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB70N04S406ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB70N04S406ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB70N04S406ATMA1?

IPB70N04S406ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB70N04S406ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB70N04S406ATMA1?

For technical support, including IPB70N04S406ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB70N04S406ATMA1 requirements.

6.How does Aetrix verify that IPB70N04S406ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB70N04S406ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB70N04S406ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB70N04S406ATMA1?

All IPB70N04S406ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB70N04S406ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB70N04S406ATMA1 part is unused and in its original packaging.

Return procedure for IPB70N04S406ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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