Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB70N10S312ATMA1

Name: IPB70N10S312ATMA1
Brand: Infineon Technologies
SKU: IPB70N10S312ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB70N10S312ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB70N10S312ATMA1.pdf

Description:: MOSFET N-CH 100V 70A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:459

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB70N10S312ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 100 V V_DS, 70 A continuous drain current at T_C = 25 °C, and 11.3 mΩ max R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and designed for high-efficiency DC-DC converters and motor control in engine management systems.

For engineers reviewing the IPB70N10S312ATMA1 datasheet, IPB70N10S312ATMA1 pinout, IPB70N10S312ATMA1 application, or IPB70N10S312ATMA1 equivalent, key selection criteria include its 1.2 K/W junction-to-case thermal resistance, 410 mJ single-pulse avalanche energy, 9.4–11.3 mΩ SMD-optimized R_DS(on), and operation up to 175 °C junction temperature.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology to achieve low conduction loss and fast switching with controlled EMI. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity in noisy automotive environments.

The integrated body diode features low forward voltage (0.6–1.2 V at 70 A) and fast reverse recovery (t_rr ≤ 100 ns), supporting synchronous rectification and freewheeling in high-frequency buck converters and H-bridge motor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V automotive battery systems with 2× safety margin against load dump transients
R_DS(on) max	11.3 mΩ at V_GS = 10 V, T_j = 25 °C - enables <1.5 W conduction loss at 70 A in compact SMD layout
I_D cont	70 A at T_C = 25 °C - delivers high current density in thermally optimized PCB mounting
E_AS	410 mJ - withstands repetitive inductive switching stress without derating in motor phase-legs
t_r/t_f	8 ns / 8 ns - supports >500 kHz PWM operation with minimal switching loss trade-off
Q_g	66 nC max - compatible with standard gate drivers (e.g., 1 A peak) without excessive drive power
T_j max	+175 °C - enables placement near heat sources in under-hood ECUs without thermal throttling

Pinout & Package

IPB70N10S312ATMA1 is housed in a PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for enhanced thermal dissipation. The package complies with MSL1 rating (peak reflow ≤ 260 °C) and supports 6 cm² copper area on FR4 PCB for R_thJA = 40 K/W.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; tied to PCB ground plane for minimal loop inductance
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD but tolerant of ±20 V transient
Pin 3 (Drain)	Power output	Exposed metal pad - must be soldered to ≥6 cm² copper pour for thermal and current path integrity

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit passes single-pulse I_AS = 70 A test - ensures field reliability in inductive fault conditions
Optimized R_DS(on)-Q_g product	~740 mΩ·nC - balances conduction and switching loss for 200–500 kHz DC-DC topologies
Low Q_gd/Q_gs ratio	0.7–1.1 - improves Miller immunity and reduces risk of shoot-through in half-bridge configurations
Integrated body diode	V_SD = 1.2 V max at 70 A - enables efficient freewheeling without external Schottky

Applications

Engine Control Unit (ECU) Power Stage

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current injector driver and ignition coil switch in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Low-side power switch controlling inductive loads with precise 10–100 µs pulse width.

Use Value: 175 °C rating allows direct mounting on ECU PCB near engine compartment heat sources without derating.

Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V DC-DC converter.

IC Role / Device Role / Timing Role: High-efficiency power FET operating at 300 kHz with zero-voltage switching assist.

Use Value: 410 mJ avalanche energy absorbs turn-off overvoltage spikes during transient load steps.

Electric Power Steering (EPS) Motor Driver

Onboard Charger (OBC) Auxiliary Supply

Use Scenario: Half-bridge leg in 3-phase EPS motor inverter delivering up to 10 kW peak power.

IC Role / Device Role / Timing Role: Phase-leg switch with fast t_r/t_f enabling precise torque ripple control.

Use Value: 9.4 mΩ typical R_DS(on) reduces conduction loss by 22% vs. legacy 14 mΩ devices at 70 A.

Use Scenario: Isolated auxiliary supply (12 V/3 A) powering OBC control circuitry from 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side switch in flyback topology operating at 100–200 kHz.

Use Value: 1.2 K/W R_thJC enables direct thermal coupling to heatsink, eliminating need for thermal interface material.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP70N10S3-12	Same die, PG-TO220-3-1 through-hole package; R_thJA = 62 K/W (no PCB copper optimization)	Better suited for prototyping or low-volume industrial SMPS where manual assembly is preferred	Select when thermal design relies on heatsink mounting rather than PCB copper area
STL120N10F7	100 V, 120 A, 7.5 mΩ typ, but higher Q_g (105 nC); not AEC-Q101 qualified	Targeted at industrial motor drives, not automotive-critical systems	Choose only for non-automotive applications requiring higher current headroom

Compared with IPP70N10S3-12, IPB70N10S312ATMA1 offers superior thermal performance in SMD layouts; versus STL120N10F7, it trades peak current for automotive qualification, lower gate charge, and guaranteed avalanche ruggedness.

Availability

IPB70N10S312ATMA1 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, electric power steering inverters, and onboard charger auxiliary supplies requiring stable component supply across automotive production lifecycles.

Supply support for IPB70N10S312ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™-T family, engineered specifically for high-reliability automotive power conversion where thermal robustness, avalanche tolerance, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum gate-source voltage rating for IPB70N10S312ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent oxide damage. For reliable 12 V gate drive, a 15 V clamp or Zener protection is recommended to prevent overshoot during fast switching transitions in noisy automotive environments.

Does IPB70N10S312ATMA1 require a gate resistor for stability?

Yes - a 3.5 Ω gate resistor is specified in the datasheet for dynamic characterization. This value damps gate oscillation, controls dv/dt during turn-on, and prevents unintended turn-on due to Miller coupling in half-bridge configurations.

Can IPB70N10S312ATMA1 replace IPP70N10S3-12 in existing designs?

Yes, with PCB layout revision: both share identical die and electrical specs, but IPB70N10S312ATMA1 requires D²PAK footprint and thermal copper pour, whereas IPP70N10S3-12 uses TO-220 through-hole pads and external heatsink mounting.

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes - its 100 ns t_rr and 265 nC Q_rr enable use in synchronous buck topologies up to 300 kHz. However, for >400 kHz operation, external Schottky clamping may further reduce switching loss and EMI.

IPB70N10S312ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11.3mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4355 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB70N10S312ATMA1 FAQ

1.How can I place an order for IPB70N10S312ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB70N10S312ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB70N10S312ATMA1 reliable?

The price and inventory of IPB70N10S312ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB70N10S312ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB70N10S312ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB70N10S312ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB70N10S312ATMA1?

IPB70N10S312ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB70N10S312ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB70N10S312ATMA1?

For technical support, including IPB70N10S312ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB70N10S312ATMA1 requirements.

6.How does Aetrix verify that IPB70N10S312ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB70N10S312ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB70N10S312ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB70N10S312ATMA1?

All IPB70N10S312ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB70N10S312ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB70N10S312ATMA1 part is unused and in its original packaging.

Return procedure for IPB70N10S312ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …