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Infineon Technologies IPB70N10S3L12ATMA1

Name: IPB70N10S3L12ATMA1
Brand: Infineon Technologies
SKU: IPB70N10S3L12ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB70N10S3L12ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB70N10S3L12ATMA1.pdf

Description:: MOSFET N-CH 100V 70A TO263-3

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Inventory:19,864

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Product details

Overview

IPB70N10S3L12ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-grade MOSFET with 100 V V_DS, 12.1 mΩ max R_DS(on) at V_GS = 10 V and I_D = 70 A, AEC-Q101 qualified, and housed in PG-TO263-3-2 (D²PAK) package. It delivers high-current switching in motor control, DC-DC converters, and automotive body electronics.

For engineers reviewing the IPB70N10S3L12ATMA1 datasheet, IPB70N10S3L12ATMA1 pinout, IPB70N10S3L12ATMA1 application, or IPB70N10S3L12ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V and 10 V, avalanche energy rating (410 mJ), thermal resistance (R_thJC = 1.5 K/W), and AEC-Q101 qualification status.

Technical Context

This OptiMOS™-T power transistor uses trench-based silicon technology optimized for low conduction and switching losses in high-duty-cycle automotive applications. Its gate threshold voltage (1.2–2.4 V) enables robust 3.3 V/5 V logic-level drive compatibility, while its 175 °C maximum junction temperature supports under-hood deployment without derating.

The device integrates a fast-recovery body diode (t_rr = 80 ns, Q_rr = 185 nC) and is fully 100% avalanche tested to ensure ruggedness in inductive load switching. Dynamic parameters-including C_iss = 5570 pF, C_oss = 1230 pF, and Q_g = 80 nC-support precise gate driver sizing for hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V automotive systems with 2× safety margin against transients.
R_DS(on) max @ V_GS = 10 V	12.1 mΩ - Enables ≤1.2 W conduction loss at 70 A continuous drain current.
I_D continuous @ T_C = 100 °C	48 A - Sustains high-power operation in thermally constrained engine bay environments.
E_AS single-pulse	410 mJ - Withstands inductive energy spikes without failure in motor phase-legs or solenoid drivers.
R_thJC	1.5 K/W - Allows direct heatsink mounting for efficient thermal management in compact modules.
t_rr / Q_rr	80 ns / 185 nC - Minimizes reverse recovery losses and EMI in synchronous rectification and half-bridge configurations.
AEC-Q101 qualified	Qualified per automotive reliability standard - Validated for lifetime operation in harsh temperature, humidity, and vibration conditions.

Pinout & Package

IPB70N10S3L12ATMA1 is packaged in PG-TO263-3-2 (D²PAK), featuring exposed drain pad for low-inductance, high-current PCB mounting and thermal interface to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts 0–10 V logic-level signals; 21 nC total gate charge requires ≥2 A peak driver capability.
2 (Drain)	High-side switch node	Exposed copper pad - electrically and thermally connected to internal drain; must be routed to heatsink or large copper area.
3 (Source)	Reference return path	Provides low-impedance return for gate drive and load current; critical for stable switching and noise immunity.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.4 V enables direct interfacing with 3.3 V microcontrollers without level-shifting.
Low R_DS(on) at 4.5 V	15.5 mΩ max (SMD version) - maintains efficiency in 5 V gate-drive systems like automotive ECUs.
Robust avalanche capability	100% production-tested for 410 mJ single-pulse energy - eliminates need for external snubbers in inductive loads.
High-temperature operation	Rated up to 175 °C junction temperature - supports placement near engines or inverters without thermal throttling.
Automotive qualification	AEC-Q101 certified with MSL1 reflow tolerance - ensures reliability across full automotive lifecycle and manufacturing processes.

Applications

Automotive Motor Control

Onboard Charger (OBC) DC-DC Stage

Use Scenario: Driving 12 V/24 V brushed DC motors in HVAC actuators and seat positioners.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor direction and PWM speed regulation.

Use Value: Low R_DS(on) minimizes heat generation in space-constrained modules; AEC-Q101 ensures >15-year field reliability.

Use Scenario: Primary-side synchronous rectification in isolated 3.3 kW bidirectional OBC DC-DC converters.

IC Role / Device Role / Timing Role: Fast-switching power FET in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: Low Q_gd/Q_g ratio and fast t_r/t_f reduce switching losses; rugged body diode enables ZVS soft-switching.

12 V Battery Disconnect Switch

Industrial PLC Output Module

Use Scenario: Solid-state replacement for mechanical relays in battery management systems for start-stop and load-dump protection.

IC Role / Device Role / Timing Role: High-current, fail-safe isolation switch between starter battery and auxiliary loads.

Use Value: 280 A pulsed current rating handles cranking surges; 100% avalanche test guarantees survival during load dump events.

Use Scenario: Digital output stage driving 24 V industrial solenoids, valves, and indicator lamps in DIN-rail PLCs.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated diagnostics and overcurrent limiting.

Use Value: 175 °C operation allows dense packaging in sealed enclosures; low leakage (<1 µA) prevents false triggering in noisy factory environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP70N10S3L12ATMA1	Same die, PG-TO220-3-1 package - higher R_thJA (62 K/W), no exposed drain pad.	Better suited for prototyping or low-volume through-hole assembly; less effective thermal dissipation than D²PAK.	Select when board layout lacks SMD heatsinking capability or when manual soldering is required.
IPB70N10S3L12ATMA2	Same PG-TO263-3-2 package but with enhanced gate oxide reliability and tighter R_DS(on) distribution (9.8–11.8 mΩ).	Targeted for next-gen ADAS power stages requiring extended lifetime and lower parametric variation.	Prefer for new designs where long-term parametric stability and reduced gate wear are critical.

Compared with IPP70N10S3L12ATMA1, IPB70N10S3L12ATMA1 offers superior thermal performance and higher current density due to its D²PAK package; versus IPB70N10S3L12ATMA2, it trades minor R_DS(on) tolerance for proven field reliability and broader supply chain availability.

Availability

IPB70N10S3L12ATMA1 is available at Aetrix Electronics and suitable for automotive motor control, onboard charger DC-DC conversion, and battery disconnect switching requiring stable component supply across multi-year production cycles.

Supply support for IPB70N10S3L12ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability automotive power switching applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum gate-source voltage rating for IPB70N10S3L12ATMA1?

The absolute maximum gate-source voltage is ±20 V. Exceeding this risks permanent gate oxide damage. Recommended operating range is –5 V to +10 V for reliable switching; negative V_GS helps suppress parasitic turn-on during high dv/dt events in bridge configurations.

Does IPB70N10S3L12ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 70 A switching at 100 kHz, a 3.5 Ω resistor is validated in Infineon's reference design. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses.

Can IPB70N10S3L12ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables inherent current sharing. Layout symmetry, matched gate drive paths, and individual gate resistors are mandatory. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.

Is the body diode suitable for synchronous rectification in continuous conduction mode?

Yes - the body diode has t_rr = 80 ns and Q_rr = 185 nC, enabling use in CCM flyback or LLC resonant converters up to 200 kHz. However, for optimal efficiency, external Schottky diodes or complementary FETs are preferred above 150 kHz due to diode conduction loss.

IPB70N10S3L12ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.8mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB70N10S3L12ATMA1 FAQ

1.How can I place an order for IPB70N10S3L12ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB70N10S3L12ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB70N10S3L12ATMA1 reliable?

The price and inventory of IPB70N10S3L12ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB70N10S3L12ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB70N10S3L12ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB70N10S3L12ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB70N10S3L12ATMA1?

IPB70N10S3L12ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB70N10S3L12ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB70N10S3L12ATMA1?

For technical support, including IPB70N10S3L12ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB70N10S3L12ATMA1 requirements.

6.How does Aetrix verify that IPB70N10S3L12ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB70N10S3L12ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB70N10S3L12ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB70N10S3L12ATMA1?

All IPB70N10S3L12ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB70N10S3L12ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB70N10S3L12ATMA1 part is unused and in its original packaging.

Return procedure for IPB70N10S3L12ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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