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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N04S204ATMA2

Name: IPB80N04S204ATMA2
Brand: Infineon Technologies
SKU: IPB80N04S204ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N04S204ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N04S204ATMA2.pdf

Description:: MOSFET N-CH 40V 80A TO263-3

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Product details

Overview

IPB80N04S204ATMA2 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low 2.9–3.7 mΩ R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C junction temperature - deployed in high-current DC-DC converters and motor control stages of EV onboard chargers.

For engineers reviewing the IPB80N04S204ATMA2 datasheet, IPB80N04S204ATMA2 pinout, IPB80N04S204ATMA2 application, or IPB80N04S204ATMA2 equivalent, key selection criteria include its 0.5 K/W R_thJC, 127–170 nC total gate charge, 53–75 ns reverse recovery time, and SMD-compatible thermal performance on 6 cm² PCB copper area.

Technical Context

This OptiMOS® device uses trench-gate superjunction architecture optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its 2.6–3.4 mΩ R_DS(on) (SMD version) enables high-efficiency synchronous rectification and high-side switching with minimal thermal derating.

Dynamic parameters - including 5300 pF input capacitance, 580 pF reverse transfer capacitance, and 4.9 V gate plateau voltage - support precise gate drive timing in hard-switched half-bridge topologies operating up to 100 kHz. The integrated body diode exhibits 0.9–1.3 V forward voltage at 80 A and controlled 85–125 nC Q_rr for reduced commutation loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - supports 12 V/24 V battery rail systems with margin against load dump transients
R_DS(on) max	3.7 mΩ at V_GS = 10 V, I_D = 80 A - enables <1.2 W conduction loss at full current
I_D continuous	80 A at T_C = 25 °C - limited by bondwire; usable up to 80 A at T_C ≤ 100 °C per derating curve
E_AS	810 mJ single-pulse avalanche energy - ensures robustness during inductive turn-off faults
Q_g	127–170 nC - determines gate driver current requirement (~1.7 A peak for 100 ns rise time)
t_r/t_f	45 ns / 32 ns - enables fast switching with low overlap loss in PWM-controlled power stages
R_thJC	0.5 K/W - allows direct heatsink mounting for thermal management in space-constrained modules

Pinout & Package

IPB80N04S204ATMA2 is housed in PG-TO263-3-2 (D²PAK), a surface-mount power package with isolated drain tab for PCB thermal relief. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level drive; requires 2.2 Ω series gate resistor to damp ringing per typical application note
Pin 2 (Drain)	High-side power node	Exposed copper tab - must be soldered to ≥6 cm² PCB copper pour for R_thJA = 40 K/W thermal performance
Pin 3 (Source)	Reference node for gate drive	Connected to power ground plane; forms return path for 80 A load current and gate drive loop

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use up to 175 °C junction temperature and MSL1 reflow profile
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 810 mJ - guarantees ruggedness in inductive switching
Ultra-low R_DS(on)	2.6 mΩ typ. (SMD version) reduces conduction loss by >30% vs. prior-gen 40 V OptiMOS devices
Green package	Lead-free, RoHS-compliant construction with halogen-free molding compound per JEDEC J-STD-020
Integrated body diode	Optimized for low Q_rr (85–125 nC) and soft recovery - minimizes voltage overshoot in freewheeling paths

Applications

Automotive DC-DC Converters

Onboard Charger (OBC) Primary Switch

Use Scenario: 12 V/48 V bidirectional buck-boost converter in mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 50–100 kHz with forced-air cooling.

Use Value: 2.9 mΩ R_DS(on) limits conduction loss to <0.9 W at 80 A, enabling >96% peak efficiency at 3 kW output.

Use Scenario: Primary-side switching element in 6.6 kW AC/DC stage of EV onboard charger.

IC Role / Device Role / Timing Role: Hard-switched high-side MOSFET in interleaved PFC + LLC topology.

Use Value: 0.5 K/W R_thJC and 810 mJ E_AS allow reliable operation under line surge and short-circuit fault conditions.

Electric Power Steering (EPS) Motor Drive

12 V Battery Disconnect Switch

Use Scenario: Three-phase inverter driving 1.5 kW brushless motor in column-assist EPS system.

IC Role / Device Role / Timing Role: Low-side switch in 60 kHz PWM-driven H-bridge with active freewheeling.

Use Value: 0.9–1.3 V V_SD and 53–75 ns t_rr reduce body-diode conduction loss and voltage spikes during dead-time transitions.

Use Scenario: Solid-state replacement for mechanical relay in 12 V battery main disconnect circuit.

IC Role / Device Role / Timing Role: Normally-open high-current switch controlled via isolated gate driver.

Use Value: AEC-Q101 qualification and 175 °C rating ensure long-term reliability in engine bay ambient temperatures up to 125 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N04S2-04	Same die, TO-220-3-1 through-hole package; R_thJC = 0.5 K/W but higher R_thJA (62 K/W)	Suitable for prototyping or low-volume industrial SMPS where manual assembly is acceptable	Select when board-level reflow is unavailable or heatsink mounting requires screw-down mechanical retention
IPI80N04S2-04	Same die, TO-262-3-1 package; identical R_thJC but larger footprint than D²PAK	Preferred for high-reliability industrial inverters needing creepage/clearance compliance beyond automotive standards	Choose when IPC-2221 Class B spacing or UL 60950 creepage requirements mandate leaded package isolation

Compared with IPP80N04S2-04 and IPI80N04S2-04, IPB80N04S204ATMA2 offers superior thermal resistance in SMD form factor (R_thJA = 40 K/W on 6 cm² copper), enabling higher power density in automated production while maintaining identical electrical specs and automotive qualification.

Availability

IPB80N04S204ATMA2 is available at Aetrix Electronics and suitable for automotive DC-DC converters, onboard charger primary switches, and electric power steering motor drives requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB80N04S204ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation power MOSFET product line, engineered specifically for high-current, high-efficiency switching in 12 V and 24 V automotive subsystems including ADAS, electrified powertrain, and body electronics.

FAQ

What is the maximum allowable gate-source voltage for IPB80N04S204ATMA2?

The absolute maximum gate-source voltage is ±20 V, qualified at both -20 V and +20 V per datasheet Rev. 1.0. Operation above +12 V or below -5 V is not recommended for long-term reliability; typical gate drive uses 10 V for full enhancement and 0 V for turn-off.

Does IPB80N04S204ATMA2 require a gate resistor, and what value is recommended?

Yes - a series gate resistor is required to control dV/dt and suppress oscillation. Infineon's ANPS071E recommends 2.2 Ω for 100 ns rise time with standard 1 A gate driver; value scales inversely with desired switching speed and driver capability.

Can IPB80N04S204ATMA2 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Fig. 9) enables inherent current sharing. Parallel operation requires matched layout, symmetric gate drive, and individual 10 Ω gate resistors to prevent oscillation coupling between devices.

Is the drain tab electrically isolated in the PG-TO263-3-2 package?

No - the exposed drain tab is electrically connected to Pin 2 (Drain). It must be mounted on a non-isolated copper pour unless external isolation (e.g., insulating pad + thermal interface) is applied per JEDEC 51-14 guidelines.

IPB80N04S204ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N04S204ATMA2 FAQ

1.How can I place an order for IPB80N04S204ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N04S204ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N04S204ATMA2 reliable?

The price and inventory of IPB80N04S204ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N04S204ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB80N04S204ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N04S204ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N04S204ATMA2?

IPB80N04S204ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N04S204ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N04S204ATMA2?

For technical support, including IPB80N04S204ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N04S204ATMA2 requirements.

6.How does Aetrix verify that IPB80N04S204ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB80N04S204ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N04S204ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB80N04S204ATMA2?

All IPB80N04S204ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N04S204ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N04S204ATMA2 part is unused and in its original packaging.

Return procedure for IPB80N04S204ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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