Infineon Technologies IPB80N04S2H4ATMA2

Overview

IPB80N04S2H4ATMA2 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low 3.7 mΩ max R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C - deployed in high-current DC-DC converters and motor control stages of EV onboard chargers.

For engineers reviewing the IPB80N04S2H4ATMA2 datasheet, IPB80N04S2H4ATMA2 pinout, IPB80N04S2H4ATMA2 application, or IPB80N04S2H4ATMA2 equivalent, key selection criteria include R_DS(on) at 80 A, thermal resistance (R_thJC = 0.5 K/W), gate charge profile (Q_g = 103–148 nC), and avalanche energy rating (E_AS = 660 mJ).

Technical Context

This OptiMOS® device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (V_GS(th) = 2.1–4.0 V) ensures robust turn-on with standard logic-level drivers, while its 480 pF reverse transfer capacitance (C_rss) supports controlled dV/dt during hard-switching.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 80 A and 25 °C, with 195 ns reverse recovery time and 370 nC Q_rr, enabling synchronous rectification in buck converters without external Schottky replacement in cost-sensitive designs.

Key Specifications

Pinout & Package

IPB80N04S2H4ATMA2 uses PG-TO263-3-2 (D²PAK) surface-mount package with isolated tab. The drain is connected to the exposed metal pad (Pin 2), source to Pin 1, and gate to Pin 3 - compatible with standard reflow profiles up to 260 °C (MSL1).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP80N04S2H4AKSA1 and IPB80N04S4-02, IPB80N04S2H4ATMA2 uniquely balances automotive qualification, SMT manufacturability, and thermal performance - making it the default choice for new AEC-compliant 48 V power stages where board space and reflow compatibility are critical.

Availability

IPB80N04S2H4ATMA2 is available at Aetrix Electronics and suitable for automotive DC-DC converters, onboard chargers, and electric power steering systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB80N04S2H4ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 2nd generation power transistor family, engineered specifically for high-current, high-reliability 12 V/24 V/48 V automotive power conversion - emphasizing low R_DS(on), avalanche ruggedness, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPB80N04S2H4ATMA2?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. For reliable switching, gate drive should be clamped between 0 V and 10–12 V, with transient overshoot suppressed to <15 V using gate resistors and TVS diodes.

Does IPB80N04S2H4ATMA2 require a negative gate voltage for turn-off in high-noise environments?

No. Its gate threshold voltage (2.1–4.0 V) and 100% UIS-tested ruggedness allow safe turn-off at 0 V gate bias. Negative gate drive is unnecessary unless operating in extreme dV/dt conditions (>50 V/ns) near high-power IGBTs - in which case -2 V to 0 V is acceptable but not required.

Can IPB80N04S2H4ATMA2 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing ~0.6%/°C) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and shared thermal interface to maintain ΔT_j < 5 °C between devices at full load.

Is the exposed drain pad on IPB80N04S2H4ATMA2 electrically isolated from the PCB ground plane?

No. The exposed drain pad (Pin 2) is electrically connected to the internal drain terminal and must be soldered to a dedicated high-current copper pour - not to signal ground. Isolation is achieved only via physical separation of that pour from other nets; no internal insulation exists.